GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs

We report on the design, fabrication and initial mechanical testing of cantilevers with tips based on a GaAs/In0.485Ga0.515P/AlAs heterostructure grown by metal organic chemical vapor deposition. They were produced using a dedicated technological process based on (1) the formation of integrated tips...

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Veröffentlicht in:	Journal of micromechanics and microengineering 2010-09, Vol.20 (9), p.097001-097001
Hauptverfasser:	Gregušová, Dagmar, Kúdela, Róbert, Eliáš, Peter, Šoltýs, Ján, Kostič, Ivan, Cambel, Vladimír
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Deposition Electronics Exact sciences and technology Gallium arsenide Gallium arsenides Heterostructures Instruments, apparatus, components and techniques common to several branches of physics and astronomy Lithography Mechanical engineering. Machine design Mechanical instruments, equipment and techniques Microelectronic fabrication (materials and surfaces technology) Micromechanical devices and systems Micromechanics Photolithography Physics Precision engineering, watch making Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Tips
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