Dependence of magnetoresistivity on charge-carrier density in metallic ferromagnets and doped magnetic semiconductors
Magnetoresistance-the field-dependent change in the electrical resistance of a ferromagnetic material-finds applications in technologies such as magnetic recording. Near and above the Curie point, T c, corresponding to the onset of magnetic order, scattering of charge carriers by magnetic fluctuatio...
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| Veröffentlicht in: | Nature (London) 1998-10, Vol.395 (6701), p.479-481 |
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| description | Magnetoresistance-the field-dependent change in the electrical resistance of a ferromagnetic material-finds applications in technologies such as magnetic recording. Near and above the Curie point, T c, corresponding to the onset of magnetic order, scattering of charge carriers by magnetic fluctuations can substantially increase the electrical resistance,. These fluctuations can be suppressed by a magnetic field, leading to a negative magnetoresistance. Magnetic scattering might also have a role in the 'colossal' magnetoresistance observed in some perovskite manganese oxides, but is it not yet clear how to reconcile this behaviour with that of the conventional ferromagnetic materials. Here we show that, in generic models of magnetic scattering, the bulk low-field magnetoresistance (near and above T c) is determined by a single parameter: the charge-carrier density. In agreement with experiment,,, the low-field magnetoresistance scales with the square of the ratio of the field-induced magnetization to the saturation magnetization. The scaling factor is C x −2/3, where x is the number of charge carriers per magnetic unit cell. Data from very different ferromagnetic metals and doped semiconductors are in broad quantitative agreement with this relationship, with the notable exception of the perovskite manganese oxides (in which dynamic lattice distortions complicate and enhance, the effects of pure magnetic scattering). Our results might facilitate searches for new materials with large bulk magnetoresistive properties. |
| doi_str_mv | 10.1038/26703 |
| format | Article |
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Near and above the Curie point, T c, corresponding to the onset of magnetic order, scattering of charge carriers by magnetic fluctuations can substantially increase the electrical resistance,. These fluctuations can be suppressed by a magnetic field, leading to a negative magnetoresistance. Magnetic scattering might also have a role in the 'colossal' magnetoresistance observed in some perovskite manganese oxides, but is it not yet clear how to reconcile this behaviour with that of the conventional ferromagnetic materials. Here we show that, in generic models of magnetic scattering, the bulk low-field magnetoresistance (near and above T c) is determined by a single parameter: the charge-carrier density. In agreement with experiment,,, the low-field magnetoresistance scales with the square of the ratio of the field-induced magnetization to the saturation magnetization. The scaling factor is C x −2/3, where x is the number of charge carriers per magnetic unit cell. Data from very different ferromagnetic metals and doped semiconductors are in broad quantitative agreement with this relationship, with the notable exception of the perovskite manganese oxides (in which dynamic lattice distortions complicate and enhance, the effects of pure magnetic scattering). Our results might facilitate searches for new materials with large bulk magnetoresistive properties.</description><identifier>ISSN: 0028-0836</identifier><identifier>EISSN: 1476-4687</identifier><identifier>DOI: 10.1038/26703</identifier><identifier>CODEN: NATUAS</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Density ; Dispersion (wave) ; Electronic transport in condensed matter ; Exact sciences and technology ; Ferromagnetism ; Fluctuation ; Galvanomagnetic and other magnetotransport effects ; Humanities and Social Sciences ; letter ; Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.) ; Magnetic properties and materials ; Magnetic semiconductors ; Magnetically ordered materials: other intrinsic properties ; Magnetism ; Magnetoresistance ; Magnetoresistivity ; Materials science ; multidisciplinary ; Nonmetallic ferromagnetic materials ; Perovskites ; Physics ; Science ; Science (multidisciplinary) ; Semiconductors ; Studies of specific magnetic materials</subject><ispartof>Nature (London), 1998-10, Vol.395 (6701), p.479-481</ispartof><rights>Macmillan Magazines Ltd. 1998</rights><rights>1998 INIST-CNRS</rights><rights>Copyright Macmillan Journals Ltd. 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Near and above the Curie point, T c, corresponding to the onset of magnetic order, scattering of charge carriers by magnetic fluctuations can substantially increase the electrical resistance,. These fluctuations can be suppressed by a magnetic field, leading to a negative magnetoresistance. Magnetic scattering might also have a role in the 'colossal' magnetoresistance observed in some perovskite manganese oxides, but is it not yet clear how to reconcile this behaviour with that of the conventional ferromagnetic materials. Here we show that, in generic models of magnetic scattering, the bulk low-field magnetoresistance (near and above T c) is determined by a single parameter: the charge-carrier density. In agreement with experiment,,, the low-field magnetoresistance scales with the square of the ratio of the field-induced magnetization to the saturation magnetization. The scaling factor is C x −2/3, where x is the number of charge carriers per magnetic unit cell. Data from very different ferromagnetic metals and doped semiconductors are in broad quantitative agreement with this relationship, with the notable exception of the perovskite manganese oxides (in which dynamic lattice distortions complicate and enhance, the effects of pure magnetic scattering). 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Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Littlewood, Peter B</au><au>Majumdar, Pinaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of magnetoresistivity on charge-carrier density in metallic ferromagnets and doped magnetic semiconductors</atitle><jtitle>Nature (London)</jtitle><stitle>Nature</stitle><date>1998-10-01</date><risdate>1998</risdate><volume>395</volume><issue>6701</issue><spage>479</spage><epage>481</epage><pages>479-481</pages><issn>0028-0836</issn><eissn>1476-4687</eissn><coden>NATUAS</coden><abstract>Magnetoresistance-the field-dependent change in the electrical resistance of a ferromagnetic material-finds applications in technologies such as magnetic recording. Near and above the Curie point, T c, corresponding to the onset of magnetic order, scattering of charge carriers by magnetic fluctuations can substantially increase the electrical resistance,. These fluctuations can be suppressed by a magnetic field, leading to a negative magnetoresistance. Magnetic scattering might also have a role in the 'colossal' magnetoresistance observed in some perovskite manganese oxides, but is it not yet clear how to reconcile this behaviour with that of the conventional ferromagnetic materials. Here we show that, in generic models of magnetic scattering, the bulk low-field magnetoresistance (near and above T c) is determined by a single parameter: the charge-carrier density. In agreement with experiment,,, the low-field magnetoresistance scales with the square of the ratio of the field-induced magnetization to the saturation magnetization. The scaling factor is C x −2/3, where x is the number of charge carriers per magnetic unit cell. Data from very different ferromagnetic metals and doped semiconductors are in broad quantitative agreement with this relationship, with the notable exception of the perovskite manganese oxides (in which dynamic lattice distortions complicate and enhance, the effects of pure magnetic scattering). Our results might facilitate searches for new materials with large bulk magnetoresistive properties.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><doi>10.1038/26703</doi><tpages>3</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Density Dispersion (wave) Electronic transport in condensed matter Exact sciences and technology Ferromagnetism Fluctuation Galvanomagnetic and other magnetotransport effects Humanities and Social Sciences letter Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.) Magnetic properties and materials Magnetic semiconductors Magnetically ordered materials: other intrinsic properties Magnetism Magnetoresistance Magnetoresistivity Materials science multidisciplinary Nonmetallic ferromagnetic materials Perovskites Physics Science Science (multidisciplinary) Semiconductors Studies of specific magnetic materials |
| title | Dependence of magnetoresistivity on charge-carrier density in metallic ferromagnets and doped magnetic semiconductors |
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