Reduction of hysteresis for carbon nanotube mobility measurements using pulsed characterization

We describe a pulsed measurement technique for suppressing hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, foun...

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Veröffentlicht in:Nanotechnology 2010-02, Vol.21 (8), p.085702-85702
Hauptverfasser: Estrada, David, Dutta, Sumit, Liao, Albert, Pop, Eric
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Dutta, Sumit
Liao, Albert
Pop, Eric
description We describe a pulsed measurement technique for suppressing hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable for other nanoscale devices such as graphene, nanowires, or molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.
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subjects Carbon nanotubes
Charge
Devices
Graphene
Mathematical models
Nanostructure
Nanowires
Relaxation time
Trapping
title Reduction of hysteresis for carbon nanotube mobility measurements using pulsed characterization
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