Novel Technique for Determination of Actual Pixel Size in Dense Arrays of Infrared Detectors

A novel technique is proposed for determining the actual pixel size in dense arrays of infrared detectors. The technique is based on probing individual pixels in an array and analyzing the parasitic bipolar transistor formed between them to determine the lateral diffusion width and, hence, the actua...

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Veröffentlicht in:	IEEE electron device letters 2010-08, Vol.31 (8), p.839-841
Hauptverfasser:	Guanghai Ding, Cheng Chen, Halder, Subrata, Hwang, James, Jongwoo Kim, Yuan, Henry
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Bipolar transistors Dark current Depletion Devices Diffusion Diffusion processes Infrared detectors infrared image sensors infrared imaging Lithography Mass spectroscopy photodetectors Pixels Probes Semiconductor devices Sensor arrays Silicon compounds Testing Zinc
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