Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor
Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 °C, 600 °C and 650 °C for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films s...
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| Veröffentlicht in: | Sensors & transducers 2010-08, Vol.119 (8), p.117-117 |
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| creator | Deore, M K Gaikwad, V B Pawar, N K Shinde, S D Kajale, D D Jain, G H |
| description | Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 °C, 600 °C and 650 °C for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity) to H^sub 2^S gas (100 ppm) at 250 °C for firing temperature 650 °C. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDX) and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity), selectivity, response and recovery time of the sensor were measured and presented. [PUBLICATION ABSTRACT] |
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| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_855688875</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>855688875</sourcerecordid><originalsourceid>FETCH-LOGICAL-p595-6670ac8321f3717bfb26acfd68f7235957a043b20d091c69de33eeed0b39c3893</originalsourceid><addsrcrecordid>eNpd0EtLAzEUBeAgCpba_xDcuHEgj-YxSyltFQottis3JZO5sanpZEwyC_-9g7pydeHwcTjcKzShislKzFV9jSaME1lpQcUtmuV8JoRQolTNyAS5XYLeJFN87LDpWrwvQ_uFywnwMoAtyVsTHsc0DbYMyYQftDYZ76HLvnvHuxR7SMVDxtHht26LDydvP_DKhwt-hexziekO3TgTMsz-7hQdVsvD4rnabNcvi6dN1YtaVFIqYqzmjDquqGpcw6SxrpXaKcZHoQyZ84aRltTUyroFzgGgJQ2vLdc1n6KH39o-xc8BcjlefLYQgukgDvmohZBaayVGef9PnuOQunHbUQk6Z3p8D_8GtrNhDw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>751428792</pqid></control><display><type>article</type><title>Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor</title><source>EZB-FREE-00999 freely available EZB journals</source><source>Alma/SFX Local Collection</source><creator>Deore, M K ; Gaikwad, V B ; Pawar, N K ; Shinde, S D ; Kajale, D D ; Jain, G H</creator><creatorcontrib>Deore, M K ; Gaikwad, V B ; Pawar, N K ; Shinde, S D ; Kajale, D D ; Jain, G H</creatorcontrib><description>Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 °C, 600 °C and 650 °C for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity) to H^sub 2^S gas (100 ppm) at 250 °C for firing temperature 650 °C. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDX) and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity), selectivity, response and recovery time of the sensor were measured and presented. [PUBLICATION ABSTRACT]</description><identifier>ISSN: 2306-8515</identifier><identifier>ISSN: 1726-5479</identifier><identifier>EISSN: 1726-5479</identifier><language>eng</language><publisher>Toronto: IFSA Publishing, S.L</publisher><subject>Air pollution ; Energy dispersive ; Firing ; Gas sensors ; Resistors ; Scanning electron microscopy ; Semiconductors ; Sensors ; Thick films ; Transducers ; Zinc oxide</subject><ispartof>Sensors & transducers, 2010-08, Vol.119 (8), p.117-117</ispartof><rights>Copyright International Frequency Sensor Association Aug 2010</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Deore, M K</creatorcontrib><creatorcontrib>Gaikwad, V B</creatorcontrib><creatorcontrib>Pawar, N K</creatorcontrib><creatorcontrib>Shinde, S D</creatorcontrib><creatorcontrib>Kajale, D D</creatorcontrib><creatorcontrib>Jain, G H</creatorcontrib><title>Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor</title><title>Sensors & transducers</title><description>Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 °C, 600 °C and 650 °C for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity) to H^sub 2^S gas (100 ppm) at 250 °C for firing temperature 650 °C. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDX) and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity), selectivity, response and recovery time of the sensor were measured and presented. [PUBLICATION ABSTRACT]</description><subject>Air pollution</subject><subject>Energy dispersive</subject><subject>Firing</subject><subject>Gas sensors</subject><subject>Resistors</subject><subject>Scanning electron microscopy</subject><subject>Semiconductors</subject><subject>Sensors</subject><subject>Thick films</subject><subject>Transducers</subject><subject>Zinc oxide</subject><issn>2306-8515</issn><issn>1726-5479</issn><issn>1726-5479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNpd0EtLAzEUBeAgCpba_xDcuHEgj-YxSyltFQottis3JZO5sanpZEwyC_-9g7pydeHwcTjcKzShislKzFV9jSaME1lpQcUtmuV8JoRQolTNyAS5XYLeJFN87LDpWrwvQ_uFywnwMoAtyVsTHsc0DbYMyYQftDYZ76HLvnvHuxR7SMVDxtHht26LDydvP_DKhwt-hexziekO3TgTMsz-7hQdVsvD4rnabNcvi6dN1YtaVFIqYqzmjDquqGpcw6SxrpXaKcZHoQyZ84aRltTUyroFzgGgJQ2vLdc1n6KH39o-xc8BcjlefLYQgukgDvmohZBaayVGef9PnuOQunHbUQk6Z3p8D_8GtrNhDw</recordid><startdate>20100801</startdate><enddate>20100801</enddate><creator>Deore, M K</creator><creator>Gaikwad, V B</creator><creator>Pawar, N K</creator><creator>Shinde, S D</creator><creator>Kajale, D D</creator><creator>Jain, G H</creator><general>IFSA Publishing, S.L</general><scope>3V.</scope><scope>4T-</scope><scope>4U-</scope><scope>7SP</scope><scope>7XB</scope><scope>88I</scope><scope>88K</scope><scope>8AL</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BFMQW</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>CLZPN</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>L7M</scope><scope>M0N</scope><scope>M2P</scope><scope>M2T</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0W</scope></search><sort><creationdate>20100801</creationdate><title>Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor</title><author>Deore, M K ; Gaikwad, V B ; Pawar, N K ; Shinde, S D ; Kajale, D D ; Jain, G H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p595-6670ac8321f3717bfb26acfd68f7235957a043b20d091c69de33eeed0b39c3893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Air pollution</topic><topic>Energy dispersive</topic><topic>Firing</topic><topic>Gas sensors</topic><topic>Resistors</topic><topic>Scanning electron microscopy</topic><topic>Semiconductors</topic><topic>Sensors</topic><topic>Thick films</topic><topic>Transducers</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deore, M K</creatorcontrib><creatorcontrib>Gaikwad, V B</creatorcontrib><creatorcontrib>Pawar, N K</creatorcontrib><creatorcontrib>Shinde, S D</creatorcontrib><creatorcontrib>Kajale, D D</creatorcontrib><creatorcontrib>Jain, G H</creatorcontrib><collection>ProQuest Central (Corporate)</collection><collection>Docstoc</collection><collection>University Readers</collection><collection>Electronics & Communications Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>Telecommunications (Alumni Edition)</collection><collection>Computing Database (Alumni Edition)</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Continental Europe Database</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>Latin America & Iberia Database</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computing Database</collection><collection>Science Database</collection><collection>Telecommunications Database</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Sensors & transducers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deore, M K</au><au>Gaikwad, V B</au><au>Pawar, N K</au><au>Shinde, S D</au><au>Kajale, D D</au><au>Jain, G H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor</atitle><jtitle>Sensors & transducers</jtitle><date>2010-08-01</date><risdate>2010</risdate><volume>119</volume><issue>8</issue><spage>117</spage><epage>117</epage><pages>117-117</pages><issn>2306-8515</issn><issn>1726-5479</issn><eissn>1726-5479</eissn><abstract>Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 °C, 600 °C and 650 °C for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity) to H^sub 2^S gas (100 ppm) at 250 °C for firing temperature 650 °C. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDX) and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity), selectivity, response and recovery time of the sensor were measured and presented. [PUBLICATION ABSTRACT]</abstract><cop>Toronto</cop><pub>IFSA Publishing, S.L</pub><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| source | EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| subjects | Air pollution Energy dispersive Firing Gas sensors Resistors Scanning electron microscopy Semiconductors Sensors Thick films Transducers Zinc oxide |
| title | Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor |
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