Properties of uniform diameter InN nanowires obtained under Si doping

Properties of uniform diameter InN nanowires obtained under Si doping

High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high cryst...

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Veröffentlicht in:Nanotechnology 2011-03, Vol.22 (12), p.125704-125704
Hauptverfasser: Gotschke, T, Schäfer-Nolte, E O, Caterino, R, Limbach, F, Stoica, T, Sutter, E, Jeganathan, K, Calarco, R
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container_end_page 125704
container_issue 12
container_start_page 125704
container_title Nanotechnology
container_volume 22
creator Gotschke, T
Schäfer-Nolte, E O
Caterino, R
Limbach, F
Stoica, T
Sutter, E
Jeganathan, K
Calarco, R
description High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after optimization of the growth conditions. To this end, statistical analysis of NW density and size distribution was performed. The high crystal quality and smooth NW surfaces were observed by high resolution transmission electron microscopy. Spectral photoluminescence has shown the increase of the band filling effect with Si flux, indicating successful n-type doping. A Raman LO scattering mode appears with a pronounced low energy tail, also reported for highly doped InN films.
doi_str_mv 10.1088/0957-4484/22/12/125704
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title Properties of uniform diameter InN nanowires obtained under Si doping
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