Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion

True n-type doping of titanium oxide without formation of midgap states would expand the use of metal oxides for charge-based devices. We demonstrate that plasma-assisted fluorine insertion passivates defect states and that fluorine acts as an n-type donor in titanium oxide. This enabled us to modif...

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Veröffentlicht in:	Nano letters 2011-02, Vol.11 (2), p.751-756
Hauptverfasser:	Seo, Hyungtak, Baker, L. Robert, Hervier, Antoine, Kim, Jinwoo, Whitten, J. L, Somorjai, Gabor A
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer Simulation Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystallization - methods Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Exact sciences and technology Fluorine - chemistry Gases - chemistry Hot Temperature Macromolecular Substances - chemistry Materials Testing Models, Chemical Molecular Conformation Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - methods Particle Size Physics Semiconductors Surface Properties Titanium - chemistry
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