Silicon PV devices based on a single step for doping, anti-reflection and surface passivation
A simplified process for photovoltaic device fabrication is explored. The simplified process incorporates a single step wherein a thin film of phosphorus doped spin on dopant (SOD) serves as dopant source, anti-reflection coating (ARC) and a surface passivation layer. Detailed fabrication and photov...
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| Veröffentlicht in: | Solar energy materials and solar cells 2010-12, Vol.94 (12), p.2205-2211 |
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| container_issue | 12 |
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| container_title | Solar energy materials and solar cells |
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| creator | Iyengar, Vikram V. Nayak, Barada K. Gupta, Mool C. |
| description | A simplified process for photovoltaic device fabrication is explored. The simplified process incorporates a single step wherein a thin film of phosphorus doped spin on dopant (SOD) serves as dopant source, anti-reflection coating (ARC) and a surface passivation layer. Detailed fabrication and photovoltaic device characterization results are presented. Device results for solar cells fabricated on low minority carrier lifetime Cz-substrates and high minority carrier lifetime Fz (polished and chemically textured substrates) are presented. Using this simplified process, photovoltaic devices with conversion efficiency of over 15% on c-Si wafers have been demonstrated. Further improvements in efficiency are possible by reduction in series resistance, control of surface dopant concentration and a rear passivated electrode configuration. |
| doi_str_mv | 10.1016/j.solmat.2010.07.013 |
| format | Article |
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The simplified process incorporates a single step wherein a thin film of phosphorus doped spin on dopant (SOD) serves as dopant source, anti-reflection coating (ARC) and a surface passivation layer. Detailed fabrication and photovoltaic device characterization results are presented. Device results for solar cells fabricated on low minority carrier lifetime Cz-substrates and high minority carrier lifetime Fz (polished and chemically textured substrates) are presented. Using this simplified process, photovoltaic devices with conversion efficiency of over 15% on c-Si wafers have been demonstrated. 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Further improvements in efficiency are possible by reduction in series resistance, control of surface dopant concentration and a rear passivated electrode configuration.</description><subject>Applied sciences</subject><subject>Crystalline silicon</subject><subject>Energy</subject><subject>Equipments, installations and applications</subject><subject>Exact sciences and technology</subject><subject>Low cost process</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Photovoltaics</subject><subject>Solar cell</subject><subject>Solar cells. 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| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2010-12, Vol.94 (12), p.2205-2211 |
| issn | 0927-0248 1879-3398 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Crystalline silicon Energy Equipments, installations and applications Exact sciences and technology Low cost process Natural energy Photovoltaic conversion Photovoltaics Solar cell Solar cells. Photoelectrochemical cells Solar energy Spin on dopants (SOD) |
| title | Silicon PV devices based on a single step for doping, anti-reflection and surface passivation |
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