Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications

Al doped ZnO (AZO) film was continuously deposited on ITO precursor on glass substrate by d.c. magnetron sputtering. The thickness of ITO was varied from 30 to 120 nm in order to investigate the effect of ITO thickness on crystallinity of AZO film. X-ray diffraction measurement shows that AZO film g...

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Veröffentlicht in:	Solar energy materials and solar cells 2011, Vol.95 (1), p.138-141
Hauptverfasser:	Kang, Dong-Won, Kuk, Seung-Hee, Ji, Kwang-Sun, Lee, Heon-Min, Han, Min-Koo
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied sciences Azo Direct energy conversion and energy accumulation Electrical engineering. Electrical power engineering Electrical power engineering Energy Exact sciences and technology Indium tin oxide ITO precursor Magnetron sputtering Natural energy Photoelectric conversion Photovoltaic cells Photovoltaic conversion Precursors Solar cell Solar cells Solar cells. Photoelectrochemical cells Solar energy Zinc oxide ZnO:Al
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