Bridgman growth and site occupation in LuAG:Ce scintillator crystals
LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation m...
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| Veröffentlicht in: | Journal of crystal growth 2010-10, Vol.312 (21), p.3136-3142 |
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| container_title | Journal of crystal growth |
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| creator | Petrosyan, A.G. Ovanesyan, K.L. Sargsyan, R.V. Shirinyan, G.O. Abler, D. Auffray, E. Lecoq, P. Dujardin, C. Pedrini, C. |
| description | LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2×2×8
mm
3 shaped samples with Ce concentration in the range 0.05–0.55
at%. Essential improvement of performance was demonstrated in samples containing ≥0.2
at% of Ce; the light yield measured in LuAG:Ce (0.55
at%) was about 26000
ph/MeV, or close to that of LSO. |
| doi_str_mv | 10.1016/j.jcrysgro.2010.07.042 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_849471407</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024810004938</els_id><sourcerecordid>849471407</sourcerecordid><originalsourceid>FETCH-LOGICAL-c476t-fe926ca8de90bb0dc4b94d8be7a1bdd3ddf013a699f1f56f164b016c3b2014e13</originalsourceid><addsrcrecordid>eNqFkM1OwzAQhC0EEqXwCsgXxClh7Th_nCgFClIlLnC2HNspjtK42A6ob4-rFq5cdqXVzM7uh9AlgZQAKW66tJNu61fOphTiEMoUGD1CE1KVWZID0GM0iZUmQFl1is687wCik8AEPdw7o1ZrMeDo_w4fWAwKexM0tlKOGxGMHbAZ8HKcLW7nGntphmD6XgTr8C42iN6fo5M2Nn1x6FP0_vT4Nn9Olq-Ll_lsmUhWFiFpdU0LKSqla2gaUJI1NVNVo0tBGqUypVogmSjquiVtXrSkYE08U2ZN_Itpkk3R9X7vxtnPUfvA18ZLHa8ZtB09r1jNSsKgjMpir5TOeu90yzfOrIXbcgJ8R413_Jca31HjUPJILRqvDhHCS9G3TgzS-D83zWiVk5xF3d1ep-O_X0Y7HsnoQWplnJaBK2v-i_oBqQOHNA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>849471407</pqid></control><display><type>article</type><title>Bridgman growth and site occupation in LuAG:Ce scintillator crystals</title><source>Elsevier ScienceDirect Journals</source><creator>Petrosyan, A.G. ; Ovanesyan, K.L. ; Sargsyan, R.V. ; Shirinyan, G.O. ; Abler, D. ; Auffray, E. ; Lecoq, P. ; Dujardin, C. ; Pedrini, C.</creator><creatorcontrib>Petrosyan, A.G. ; Ovanesyan, K.L. ; Sargsyan, R.V. ; Shirinyan, G.O. ; Abler, D. ; Auffray, E. ; Lecoq, P. ; Dujardin, C. ; Pedrini, C.</creatorcontrib><description>LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2×2×8
mm
3 shaped samples with Ce concentration in the range 0.05–0.55
at%. Essential improvement of performance was demonstrated in samples containing ≥0.2
at% of Ce; the light yield measured in LuAG:Ce (0.55
at%) was about 26000
ph/MeV, or close to that of LSO.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.07.042</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Defects ; A2. Bridgman technique ; Aluminum ; B1. Rare-earth compounds ; B2. Scintillator materials ; Bridgman method ; Cross-disciplinary physics: materials science; rheology ; Crystal defects ; Crystal growth ; Crystal lattices ; Crystals ; Exact sciences and technology ; Growth from melts; zone melting and refining ; Lattice sites ; Materials science ; Methods of crystal growth; physics of crystal growth ; Occupation ; Physics ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2010-10, Vol.312 (21), p.3136-3142</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c476t-fe926ca8de90bb0dc4b94d8be7a1bdd3ddf013a699f1f56f164b016c3b2014e13</citedby><cites>FETCH-LOGICAL-c476t-fe926ca8de90bb0dc4b94d8be7a1bdd3ddf013a699f1f56f164b016c3b2014e13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024810004938$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23285154$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Petrosyan, A.G.</creatorcontrib><creatorcontrib>Ovanesyan, K.L.</creatorcontrib><creatorcontrib>Sargsyan, R.V.</creatorcontrib><creatorcontrib>Shirinyan, G.O.</creatorcontrib><creatorcontrib>Abler, D.</creatorcontrib><creatorcontrib>Auffray, E.</creatorcontrib><creatorcontrib>Lecoq, P.</creatorcontrib><creatorcontrib>Dujardin, C.</creatorcontrib><creatorcontrib>Pedrini, C.</creatorcontrib><title>Bridgman growth and site occupation in LuAG:Ce scintillator crystals</title><title>Journal of crystal growth</title><description>LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2×2×8
mm
3 shaped samples with Ce concentration in the range 0.05–0.55
at%. Essential improvement of performance was demonstrated in samples containing ≥0.2
at% of Ce; the light yield measured in LuAG:Ce (0.55
at%) was about 26000
ph/MeV, or close to that of LSO.</description><subject>A1. Defects</subject><subject>A2. Bridgman technique</subject><subject>Aluminum</subject><subject>B1. Rare-earth compounds</subject><subject>B2. Scintillator materials</subject><subject>Bridgman method</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal defects</subject><subject>Crystal growth</subject><subject>Crystal lattices</subject><subject>Crystals</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Lattice sites</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Occupation</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkM1OwzAQhC0EEqXwCsgXxClh7Th_nCgFClIlLnC2HNspjtK42A6ob4-rFq5cdqXVzM7uh9AlgZQAKW66tJNu61fOphTiEMoUGD1CE1KVWZID0GM0iZUmQFl1is687wCik8AEPdw7o1ZrMeDo_w4fWAwKexM0tlKOGxGMHbAZ8HKcLW7nGntphmD6XgTr8C42iN6fo5M2Nn1x6FP0_vT4Nn9Olq-Ll_lsmUhWFiFpdU0LKSqla2gaUJI1NVNVo0tBGqUypVogmSjquiVtXrSkYE08U2ZN_Itpkk3R9X7vxtnPUfvA18ZLHa8ZtB09r1jNSsKgjMpir5TOeu90yzfOrIXbcgJ8R413_Jca31HjUPJILRqvDhHCS9G3TgzS-D83zWiVk5xF3d1ep-O_X0Y7HsnoQWplnJaBK2v-i_oBqQOHNA</recordid><startdate>20101015</startdate><enddate>20101015</enddate><creator>Petrosyan, A.G.</creator><creator>Ovanesyan, K.L.</creator><creator>Sargsyan, R.V.</creator><creator>Shirinyan, G.O.</creator><creator>Abler, D.</creator><creator>Auffray, E.</creator><creator>Lecoq, P.</creator><creator>Dujardin, C.</creator><creator>Pedrini, C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20101015</creationdate><title>Bridgman growth and site occupation in LuAG:Ce scintillator crystals</title><author>Petrosyan, A.G. ; Ovanesyan, K.L. ; Sargsyan, R.V. ; Shirinyan, G.O. ; Abler, D. ; Auffray, E. ; Lecoq, P. ; Dujardin, C. ; Pedrini, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c476t-fe926ca8de90bb0dc4b94d8be7a1bdd3ddf013a699f1f56f164b016c3b2014e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>A1. Defects</topic><topic>A2. Bridgman technique</topic><topic>Aluminum</topic><topic>B1. Rare-earth compounds</topic><topic>B2. Scintillator materials</topic><topic>Bridgman method</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal defects</topic><topic>Crystal growth</topic><topic>Crystal lattices</topic><topic>Crystals</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Lattice sites</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Occupation</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Petrosyan, A.G.</creatorcontrib><creatorcontrib>Ovanesyan, K.L.</creatorcontrib><creatorcontrib>Sargsyan, R.V.</creatorcontrib><creatorcontrib>Shirinyan, G.O.</creatorcontrib><creatorcontrib>Abler, D.</creatorcontrib><creatorcontrib>Auffray, E.</creatorcontrib><creatorcontrib>Lecoq, P.</creatorcontrib><creatorcontrib>Dujardin, C.</creatorcontrib><creatorcontrib>Pedrini, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Petrosyan, A.G.</au><au>Ovanesyan, K.L.</au><au>Sargsyan, R.V.</au><au>Shirinyan, G.O.</au><au>Abler, D.</au><au>Auffray, E.</au><au>Lecoq, P.</au><au>Dujardin, C.</au><au>Pedrini, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bridgman growth and site occupation in LuAG:Ce scintillator crystals</atitle><jtitle>Journal of crystal growth</jtitle><date>2010-10-15</date><risdate>2010</risdate><volume>312</volume><issue>21</issue><spage>3136</spage><epage>3142</epage><pages>3136-3142</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>LuAG:Ce single crystals with various activator concentrations were grown by the vertical Bridgman technique. Characterization of crystals was done in terms of actual doping level, macroscopic defects and degree of non-equivalent substitutions by Lu for Al in octahedral lattice sites. Scintillation measurements were performed using 2×2×8
mm
3 shaped samples with Ce concentration in the range 0.05–0.55
at%. Essential improvement of performance was demonstrated in samples containing ≥0.2
at% of Ce; the light yield measured in LuAG:Ce (0.55
at%) was about 26000
ph/MeV, or close to that of LSO.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.07.042</doi><tpages>7</tpages></addata></record> |
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| subjects | A1. Defects A2. Bridgman technique Aluminum B1. Rare-earth compounds B2. Scintillator materials Bridgman method Cross-disciplinary physics: materials science rheology Crystal defects Crystal growth Crystal lattices Crystals Exact sciences and technology Growth from melts zone melting and refining Lattice sites Materials science Methods of crystal growth physics of crystal growth Occupation Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Bridgman growth and site occupation in LuAG:Ce scintillator crystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T08%3A51%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Bridgman%20growth%20and%20site%20occupation%20in%20LuAG:Ce%20scintillator%20crystals&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Petrosyan,%20A.G.&rft.date=2010-10-15&rft.volume=312&rft.issue=21&rft.spage=3136&rft.epage=3142&rft.pages=3136-3142&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2010.07.042&rft_dat=%3Cproquest_cross%3E849471407%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=849471407&rft_id=info:pmid/&rft_els_id=S0022024810004938&rfr_iscdi=true |