High-Quality hbox Al 2 hbox O 3 for Low-Voltage High-Speed High-Temperature (Up to 250 [compfn] hbox C ) Nonvolatile Memory Technology

We report the properties of a MANAS ( hbox Metal / break hbox Al 2 hbox O 3 / hbox Nitride / hbox Al 2 hbox O 3 / hbox Si ) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality hbox Al 2 hbox O 3 deposited by the molecular-atomic-depositio...

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Veröffentlicht in:	IEEE electron device letters 2010-12, Vol.31 (12), p.1443-1445
Hauptverfasser:	Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T P
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Deposition Derivatives Dielectrics High speed Nitrides Offsets Silicon
Online-Zugang:	Volltext
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