High-Quality hbox Al 2 hbox O 3 for Low-Voltage High-Speed High-Temperature (Up to 250 [compfn] hbox C ) Nonvolatile Memory Technology
We report the properties of a MANAS ( hbox Metal / break hbox Al 2 hbox O 3 / hbox Nitride / hbox Al 2 hbox O 3 / hbox Si ) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality hbox Al 2 hbox O 3 deposited by the molecular-atomic-depositio...
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| Veröffentlicht in: | IEEE electron device letters 2010-12, Vol.31 (12), p.1443-1445 |
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| container_issue | 12 |
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| container_title | IEEE electron device letters |
| container_volume | 31 |
| creator | Cui, Sharon Peng, Cheng-Yi Zhang, Wenqi Sun, Xiao Yang, Jie Liu, Zuoguang Kornblum, Lior Eizenberg, Moshe Ma, T P |
| description | We report the properties of a MANAS ( hbox Metal / break hbox Al 2 hbox O 3 / hbox Nitride / hbox Al 2 hbox O 3 / hbox Si ) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality hbox Al 2 hbox O 3 deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS ( hbox Metal / hbox Al 2 hbox O 3 / hbox Nitride / hbox SiO 2 / hbox Si ) and its derivatives, the MANAS structure features the following: 1) low-voltage/high-speed operation; 2) fabrication simplicity; and 3) high-temperature retention up to 250 [compfn] hbox C . These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the hbox MAD Unknown character hbox Al 2 hbox O 3 , as well as its relatively high conduction band offset and low valence band offset. |
| doi_str_mv | 10.1109/LED.2010.2072902 |
| format | Article |
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Compared with state-of-the-art MANOS ( hbox Metal / hbox Al 2 hbox O 3 / hbox Nitride / hbox SiO 2 / hbox Si ) and its derivatives, the MANAS structure features the following: 1) low-voltage/high-speed operation; 2) fabrication simplicity; and 3) high-temperature retention up to 250 [compfn] hbox C . These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the hbox MAD Unknown character hbox Al 2 hbox O 3 , as well as its relatively high conduction band offset and low valence band offset.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2072902</identifier><language>eng</language><subject>Aluminum ; Deposition ; Derivatives ; Dielectrics ; High speed ; Nitrides ; Offsets ; Silicon</subject><ispartof>IEEE electron device letters, 2010-12, Vol.31 (12), p.1443-1445</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cui, Sharon</creatorcontrib><creatorcontrib>Peng, Cheng-Yi</creatorcontrib><creatorcontrib>Zhang, Wenqi</creatorcontrib><creatorcontrib>Sun, Xiao</creatorcontrib><creatorcontrib>Yang, Jie</creatorcontrib><creatorcontrib>Liu, Zuoguang</creatorcontrib><creatorcontrib>Kornblum, Lior</creatorcontrib><creatorcontrib>Eizenberg, Moshe</creatorcontrib><creatorcontrib>Ma, T P</creatorcontrib><title>High-Quality hbox Al 2 hbox O 3 for Low-Voltage High-Speed High-Temperature (Up to 250 [compfn] hbox C ) Nonvolatile Memory Technology</title><title>IEEE electron device letters</title><description>We report the properties of a MANAS ( hbox Metal / break hbox Al 2 hbox O 3 / hbox Nitride / hbox Al 2 hbox O 3 / hbox Si ) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality hbox Al 2 hbox O 3 deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS ( hbox Metal / hbox Al 2 hbox O 3 / hbox Nitride / hbox SiO 2 / hbox Si ) and its derivatives, the MANAS structure features the following: 1) low-voltage/high-speed operation; 2) fabrication simplicity; and 3) high-temperature retention up to 250 [compfn] hbox C . 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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2010-12, Vol.31 (12), p.1443-1445 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum Deposition Derivatives Dielectrics High speed Nitrides Offsets Silicon |
| title | High-Quality hbox Al 2 hbox O 3 for Low-Voltage High-Speed High-Temperature (Up to 250 [compfn] hbox C ) Nonvolatile Memory Technology |
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