A Neural Recording Amplifier with Low-Frequency Noise Suppression
To detect neural spike signals, low-power neural signal recording frontend circuits must amplify neural signals with below 100µV amplitude and a few hundred Hz frequency while suppressing a large DC offset voltage, 1/f noise of MOSFETs, and induced noise of AC power supply. To overcome the problem o...
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| Veröffentlicht in: | IEICE Transactions on Electronics 2010/06/01, Vol.E93.C(6), pp.849-854 |
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| container_title | IEICE Transactions on Electronics |
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| creator | YOSHIDA, Takeshi MASUI, Yoshihiro EKI, Ryoji IWATA, Atsushi YOSHIDA, Masayuki UEMATSU, Kazumasa |
| description | To detect neural spike signals, low-power neural signal recording frontend circuits must amplify neural signals with below 100µV amplitude and a few hundred Hz frequency while suppressing a large DC offset voltage, 1/f noise of MOSFETs, and induced noise of AC power supply. To overcome the problem of unwanted noise at such a low signal level, a low-noise neural signal detection amplifier with low-frequency noise suppression scheme was developed utilizing a new autozeroing technique. A test chip was designed and fabricated with a mixed signal 0.18-µm CMOS technology. The voltage gain of 39dB at the bandwidth of the neural signal and the gain reduction of 20dB at AC supply noise of 60Hz were obtained. The input equivalent noise and power dissipation were 90nV/root-Hz and 90µW at a supply voltage of 1.5V, respectively. |
| doi_str_mv | 10.1587/transele.E93.C.849 |
| format | Article |
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To overcome the problem of unwanted noise at such a low signal level, a low-noise neural signal detection amplifier with low-frequency noise suppression scheme was developed utilizing a new autozeroing technique. A test chip was designed and fabricated with a mixed signal 0.18-µm CMOS technology. The voltage gain of 39dB at the bandwidth of the neural signal and the gain reduction of 20dB at AC supply noise of 60Hz were obtained. The input equivalent noise and power dissipation were 90nV/root-Hz and 90µW at a supply voltage of 1.5V, respectively.</description><identifier>ISSN: 0916-8524</identifier><identifier>ISSN: 1745-1353</identifier><identifier>EISSN: 1745-1353</identifier><identifier>DOI: 10.1587/transele.E93.C.849</identifier><language>eng</language><publisher>The Institute of Electronics, Information and Communication Engineers</publisher><subject>1/f noise ; Amplification ; Amplifiers ; autozero technology ; Electric potential ; Electronics ; MOSFETs ; neural recording amplifier ; neural signal sensing LSI ; Noise ; Recording ; Voltage</subject><ispartof>IEICE Transactions on Electronics, 2010/06/01, Vol.E93.C(6), pp.849-854</ispartof><rights>2010 The Institute of Electronics, Information and Communication Engineers</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c412t-7a09a4abcfb344bdaecac396468c1db5ed30a28b6bc3174590770535dad421163</citedby><cites>FETCH-LOGICAL-c412t-7a09a4abcfb344bdaecac396468c1db5ed30a28b6bc3174590770535dad421163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>YOSHIDA, Takeshi</creatorcontrib><creatorcontrib>MASUI, Yoshihiro</creatorcontrib><creatorcontrib>EKI, Ryoji</creatorcontrib><creatorcontrib>IWATA, Atsushi</creatorcontrib><creatorcontrib>YOSHIDA, Masayuki</creatorcontrib><creatorcontrib>UEMATSU, Kazumasa</creatorcontrib><title>A Neural Recording Amplifier with Low-Frequency Noise Suppression</title><title>IEICE Transactions on Electronics</title><addtitle>IEICE Trans. Electron.</addtitle><description>To detect neural spike signals, low-power neural signal recording frontend circuits must amplify neural signals with below 100µV amplitude and a few hundred Hz frequency while suppressing a large DC offset voltage, 1/f noise of MOSFETs, and induced noise of AC power supply. To overcome the problem of unwanted noise at such a low signal level, a low-noise neural signal detection amplifier with low-frequency noise suppression scheme was developed utilizing a new autozeroing technique. A test chip was designed and fabricated with a mixed signal 0.18-µm CMOS technology. The voltage gain of 39dB at the bandwidth of the neural signal and the gain reduction of 20dB at AC supply noise of 60Hz were obtained. The input equivalent noise and power dissipation were 90nV/root-Hz and 90µW at a supply voltage of 1.5V, respectively.</description><subject>1/f noise</subject><subject>Amplification</subject><subject>Amplifiers</subject><subject>autozero technology</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>MOSFETs</subject><subject>neural recording amplifier</subject><subject>neural signal sensing LSI</subject><subject>Noise</subject><subject>Recording</subject><subject>Voltage</subject><issn>0916-8524</issn><issn>1745-1353</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpdkMtOwzAQRS0EEqXwA6yyY5Vix87DyyhqeagqEo-1NXEmras0CXaiqn-Pq0IXrO7mnNGdS8g9ozMWZ-njYKF12OBsLvmsmGVCXpAJS0UcMh7zSzKhkiVhFkfimtw4t6WUZRHjE5LnwQpHC03wjrqzlWnXQb7rG1MbtMHeDJtg2e3DhcXvEVt9CFadcRh8jH1v0TnTtbfkqobG4d1vTsnXYv5ZPIfLt6eXIl-GWrBoCFOgEgSUui65EGUFqEFzmYgk06wqY6w4hSgrk1LzY3FJ05TGPK6gEhFjCZ-Sh9Pd3na-ixvUzjiNTQMtdqNT_mdvcSk9GZ1IbTvnLNaqt2YH9qAYVce51N9cys-liqPqpdeTtHUDrPGsgB2M9uQ_JTmnl8-Q3oBV2PIfSOx75w</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>YOSHIDA, Takeshi</creator><creator>MASUI, Yoshihiro</creator><creator>EKI, Ryoji</creator><creator>IWATA, Atsushi</creator><creator>YOSHIDA, Masayuki</creator><creator>UEMATSU, Kazumasa</creator><general>The Institute of Electronics, Information and Communication Engineers</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2010</creationdate><title>A Neural Recording Amplifier with Low-Frequency Noise Suppression</title><author>YOSHIDA, Takeshi ; MASUI, Yoshihiro ; EKI, Ryoji ; IWATA, Atsushi ; YOSHIDA, Masayuki ; UEMATSU, Kazumasa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c412t-7a09a4abcfb344bdaecac396468c1db5ed30a28b6bc3174590770535dad421163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>1/f noise</topic><topic>Amplification</topic><topic>Amplifiers</topic><topic>autozero technology</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>MOSFETs</topic><topic>neural recording amplifier</topic><topic>neural signal sensing LSI</topic><topic>Noise</topic><topic>Recording</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YOSHIDA, Takeshi</creatorcontrib><creatorcontrib>MASUI, Yoshihiro</creatorcontrib><creatorcontrib>EKI, Ryoji</creatorcontrib><creatorcontrib>IWATA, Atsushi</creatorcontrib><creatorcontrib>YOSHIDA, Masayuki</creatorcontrib><creatorcontrib>UEMATSU, Kazumasa</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YOSHIDA, Takeshi</au><au>MASUI, Yoshihiro</au><au>EKI, Ryoji</au><au>IWATA, Atsushi</au><au>YOSHIDA, Masayuki</au><au>UEMATSU, Kazumasa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Neural Recording Amplifier with Low-Frequency Noise Suppression</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2010</date><risdate>2010</risdate><volume>E93.C</volume><issue>6</issue><spage>849</spage><epage>854</epage><pages>849-854</pages><issn>0916-8524</issn><issn>1745-1353</issn><eissn>1745-1353</eissn><abstract>To detect neural spike signals, low-power neural signal recording frontend circuits must amplify neural signals with below 100µV amplitude and a few hundred Hz frequency while suppressing a large DC offset voltage, 1/f noise of MOSFETs, and induced noise of AC power supply. To overcome the problem of unwanted noise at such a low signal level, a low-noise neural signal detection amplifier with low-frequency noise suppression scheme was developed utilizing a new autozeroing technique. A test chip was designed and fabricated with a mixed signal 0.18-µm CMOS technology. The voltage gain of 39dB at the bandwidth of the neural signal and the gain reduction of 20dB at AC supply noise of 60Hz were obtained. 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| identifier | ISSN: 0916-8524 |
| ispartof | IEICE Transactions on Electronics, 2010/06/01, Vol.E93.C(6), pp.849-854 |
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| language | eng |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | 1/f noise Amplification Amplifiers autozero technology Electric potential Electronics MOSFETs neural recording amplifier neural signal sensing LSI Noise Recording Voltage |
| title | A Neural Recording Amplifier with Low-Frequency Noise Suppression |
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