Negative spin polarization observed by the Hanle effect in quantum wells grown on processed surfaces

A series of quantum well (QW) structures of Al sub(0.3)Ga sub(0.7)As/GaAs were characterized by photoluminescence spectroscopy with circularly polarized excitation at 1.6 K. The samples were grown by molecular beam epitaxy on a 500 nm thick GaAs buffer layer and contained three QW structures with th...

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Veröffentlicht in:	Solid state communications 2010-10, Vol.150 (37-38), p.1746-1750
Hauptverfasser:	Mejía-García, C., Winter, A., López-López, M., Gilinsky, A., Pascher, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Buffers Excitation Gallium arsenide Gallium arsenides Molecular structure Polarization
Online-Zugang:	Volltext
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