Resolution and Sensitivity of a Resist with and without Hexamethyldisilazane Determined Using Profilometry
We evaluated the resolution and sensitivity of a resist with and without hexamethyldisilazane (HMDS), which improves resist adhesion to substrates, by using profilometry. HMDS was spin-coated onto a Si wafer by using a spin coater. The resist with HMDS was always thicker than that without HMDS for t...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2006, Vol.19(1), pp.75-80 |
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| container_title | Journal of Photopolymer Science and Technology |
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| creator | Horibe, Hideo Yamamoto, Masashi Takamatsu, Shinya Ichikawa, Tomokazu |
| description | We evaluated the resolution and sensitivity of a resist with and without hexamethyldisilazane (HMDS), which improves resist adhesion to substrates, by using profilometry. HMDS was spin-coated onto a Si wafer by using a spin coater. The resist with HMDS was always thicker than that without HMDS for the same exposure dose. The resist pattern profile (resolution) with HMDS was better than that without HMDS. We found that UV absorbance of the resist with HMDS was greater than without HMDS. The resist was mixed with HMDS, and the phenolic hydroxyl groups of the resist were silylated by HMDS. The light through the resist was absorbed in the mixed layer. Also, the mixed layer weakened the reflected light from the Si substrate. We demonstrated that the mixed layer generated by resist with HMDS works as an antireflection coating for the resist. |
| doi_str_mv | 10.2494/photopolymer.19.75 |
| format | Article |
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HMDS was spin-coated onto a Si wafer by using a spin coater. The resist with HMDS was always thicker than that without HMDS for the same exposure dose. The resist pattern profile (resolution) with HMDS was better than that without HMDS. We found that UV absorbance of the resist with HMDS was greater than without HMDS. The resist was mixed with HMDS, and the phenolic hydroxyl groups of the resist were silylated by HMDS. The light through the resist was absorbed in the mixed layer. Also, the mixed layer weakened the reflected light from the Si substrate. We demonstrated that the mixed layer generated by resist with HMDS works as an antireflection coating for the resist.</description><identifier>ISSN: 0914-9244</identifier><identifier>ISSN: 1349-6336</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.19.75</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>Adhesion tests ; antireflection coating ; Antireflection coatings ; Coating ; film-thickness meter ; hexamethyldisilazane ; Hydroxyl groups ; Photopolymers ; resist pattern profile ; Resists ; resolution ; sensitivity ; Silicon ; Silicon substrates</subject><ispartof>Journal of Photopolymer Science and Technology, 2006, Vol.19(1), pp.75-80</ispartof><rights>2006 The Society of Photopolymer Science and Technology (SPST)</rights><rights>Copyright Japan Science and Technology Agency 2006</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c481t-9781fb6cce819aadb06a7c3518a0ce93e4c682164a182db6aec5f9009b21dbc73</citedby><cites>FETCH-LOGICAL-c481t-9781fb6cce819aadb06a7c3518a0ce93e4c682164a182db6aec5f9009b21dbc73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1883,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Horibe, Hideo</creatorcontrib><creatorcontrib>Yamamoto, Masashi</creatorcontrib><creatorcontrib>Takamatsu, Shinya</creatorcontrib><creatorcontrib>Ichikawa, Tomokazu</creatorcontrib><title>Resolution and Sensitivity of a Resist with and without Hexamethyldisilazane Determined Using Profilometry</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>We evaluated the resolution and sensitivity of a resist with and without hexamethyldisilazane (HMDS), which improves resist adhesion to substrates, by using profilometry. HMDS was spin-coated onto a Si wafer by using a spin coater. The resist with HMDS was always thicker than that without HMDS for the same exposure dose. The resist pattern profile (resolution) with HMDS was better than that without HMDS. We found that UV absorbance of the resist with HMDS was greater than without HMDS. The resist was mixed with HMDS, and the phenolic hydroxyl groups of the resist were silylated by HMDS. The light through the resist was absorbed in the mixed layer. Also, the mixed layer weakened the reflected light from the Si substrate. We demonstrated that the mixed layer generated by resist with HMDS works as an antireflection coating for the resist.</description><subject>Adhesion tests</subject><subject>antireflection coating</subject><subject>Antireflection coatings</subject><subject>Coating</subject><subject>film-thickness meter</subject><subject>hexamethyldisilazane</subject><subject>Hydroxyl groups</subject><subject>Photopolymers</subject><subject>resist pattern profile</subject><subject>Resists</subject><subject>resolution</subject><subject>sensitivity</subject><subject>Silicon</subject><subject>Silicon substrates</subject><issn>0914-9244</issn><issn>1349-6336</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNplkE1P3DAQhi1EJRbaP9CTpR44ZbFjJ7GPFd8SEqjA2XKcCeuVEy-20xJ-PYZFCNHLzEjzvKPRg9BPSpYll_xos_LJb7ybBwhLKpdNtYMWlHFZ1IzVu2hBJOWFLDnfQ_sxrglhrKrkAq3_QPRuStaPWI8dvoUx2mT_2jRj32ON897GhP_ZtHoDXgc_JXwBT3qAtJpdZ6N1-lmPgE8gQRjsCB2-j3Z8wDfB99b5DIb5O_rWaxfhx3s_QPdnp3fHF8XV9fnl8e-rwnBBUyEbQfu2NgYElVp3Lal1Y1hFhSYGJANualHSmmsqyq6tNZiql4TItqRdaxp2gA63dzfBP04QkxpsNOBc_tBPUYksjImyYZn89YVc-ymM-TlFOec1y8JEpsotZYKPMUCvNsEOOsyKEvVqX322r6hUTZVD59vQOib9AB8RHZI1Dv6L0G1pqg_CrHRQMLIXR1CZvw</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Horibe, Hideo</creator><creator>Yamamoto, Masashi</creator><creator>Takamatsu, Shinya</creator><creator>Ichikawa, Tomokazu</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2006</creationdate><title>Resolution and Sensitivity of a Resist with and without Hexamethyldisilazane Determined Using Profilometry</title><author>Horibe, Hideo ; Yamamoto, Masashi ; Takamatsu, Shinya ; Ichikawa, Tomokazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c481t-9781fb6cce819aadb06a7c3518a0ce93e4c682164a182db6aec5f9009b21dbc73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Adhesion tests</topic><topic>antireflection coating</topic><topic>Antireflection coatings</topic><topic>Coating</topic><topic>film-thickness meter</topic><topic>hexamethyldisilazane</topic><topic>Hydroxyl groups</topic><topic>Photopolymers</topic><topic>resist pattern profile</topic><topic>Resists</topic><topic>resolution</topic><topic>sensitivity</topic><topic>Silicon</topic><topic>Silicon substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Horibe, Hideo</creatorcontrib><creatorcontrib>Yamamoto, Masashi</creatorcontrib><creatorcontrib>Takamatsu, Shinya</creatorcontrib><creatorcontrib>Ichikawa, Tomokazu</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Horibe, Hideo</au><au>Yamamoto, Masashi</au><au>Takamatsu, Shinya</au><au>Ichikawa, Tomokazu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resolution and Sensitivity of a Resist with and without Hexamethyldisilazane Determined Using Profilometry</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2006</date><risdate>2006</risdate><volume>19</volume><issue>1</issue><spage>75</spage><epage>80</epage><pages>75-80</pages><issn>0914-9244</issn><issn>1349-6336</issn><eissn>1349-6336</eissn><abstract>We evaluated the resolution and sensitivity of a resist with and without hexamethyldisilazane (HMDS), which improves resist adhesion to substrates, by using profilometry. HMDS was spin-coated onto a Si wafer by using a spin coater. The resist with HMDS was always thicker than that without HMDS for the same exposure dose. The resist pattern profile (resolution) with HMDS was better than that without HMDS. We found that UV absorbance of the resist with HMDS was greater than without HMDS. The resist was mixed with HMDS, and the phenolic hydroxyl groups of the resist were silylated by HMDS. The light through the resist was absorbed in the mixed layer. Also, the mixed layer weakened the reflected light from the Si substrate. We demonstrated that the mixed layer generated by resist with HMDS works as an antireflection coating for the resist.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.19.75</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| source | J-STAGE Free; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Free Full-Text Journals in Chemistry |
| subjects | Adhesion tests antireflection coating Antireflection coatings Coating film-thickness meter hexamethyldisilazane Hydroxyl groups Photopolymers resist pattern profile Resists resolution sensitivity Silicon Silicon substrates |
| title | Resolution and Sensitivity of a Resist with and without Hexamethyldisilazane Determined Using Profilometry |
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