Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films
In the present study diamond like carbon (DLC) and carbon nitride (a-CN x:H) films were deposited by closed drift ion source from the acetylene and nitrogen gas mixture. The piezoresistive, electrical and optical properties of ion beam synthesized DLC films were investigated. Piezoresistive properti...
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| Veröffentlicht in: | Diamond and related materials 2010-10, Vol.19 (10), p.1249-1253 |
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| creator | Meškinis, Š. Gudaitis, R. Kopustinskas, V. Tamulevičius, S. Šlapikas, K. |
| description | In the present study diamond like carbon (DLC) and carbon nitride (a-CN
x:H) films were deposited by closed drift ion source from the acetylene and nitrogen gas mixture. The piezoresistive, electrical and optical properties of ion beam synthesized DLC films were investigated. Piezoresistive properties of the diamond like carbon and carbon nitride films were evaluated by four point bending test. The piezoresistors were fabricated on crystalline alumina substrates using Al-based interdigitated finger type electrodes. Effects of the nitrogen concentration on the piezoresistive gauge factor were investigated. The dependence of the resistance of the metal/a-CN
x:H/metal structures on temperature has been studied. Current–voltage (
I–
V) and capacitance–voltage characteristics were measured for a-CN
x:H/Si heterostructures. The main current transport mechanisms were analyzed. Optical parameters of the synthesized films such as optical bandgap and
B parameter (slope of the linear part of the Tauc plot) were investigated to study possible correlation with the piezoresistive properties. |
| doi_str_mv | 10.1016/j.diamond.2010.06.008 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_831212889</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0925963510002153</els_id><sourcerecordid>831212889</sourcerecordid><originalsourceid>FETCH-LOGICAL-c371t-1dca43c09790ea32ba37a14cf091570c94be3874767d1605bcb08606941829b33</originalsourceid><addsrcrecordid>eNqFkM1KxDAUhYMoOI4-gtCNuLH1JmnTZiUy-AcDutB1SNNbyNg2Y9IZ0Kc3M1PcuspNOOeenI-QSwoZBSpuV1ljde-GJmMQ30BkANURmdGqlCmAYMdkBpIVqRS8OCVnIawAKJM5nRH9ZvHHeQw2jHaLN4lbj9boLtFDk2CHZvT769q7NfrRYkhcm0x5SWc_MTHa127YG6ZxsNHVYNLarg_n5KTVXcCL6ZyTj8eH98Vzunx9elncL1PDSzqmtDE65wZkKQE1Z7Xmpaa5aUHSogQj8xp5VealKBsqoKhNDZUAEVtUTNacz8n1YW_86tcGw6h6Gwx2nR7QbYKqOGWUVZWMyuKgNN6F4LFVa2977b8VBbUjqlZqaqh2RBUIFYlG39WUoENk0no9GBv-zIwzzpkoou7uoMNYd2vRq2AsDgYb6yNQ1Tj7T9IvxWqO9A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>831212889</pqid></control><display><type>article</type><title>Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films</title><source>Access via ScienceDirect (Elsevier)</source><creator>Meškinis, Š. ; Gudaitis, R. ; Kopustinskas, V. ; Tamulevičius, S. ; Šlapikas, K.</creator><creatorcontrib>Meškinis, Š. ; Gudaitis, R. ; Kopustinskas, V. ; Tamulevičius, S. ; Šlapikas, K.</creatorcontrib><description>In the present study diamond like carbon (DLC) and carbon nitride (a-CN
x:H) films were deposited by closed drift ion source from the acetylene and nitrogen gas mixture. The piezoresistive, electrical and optical properties of ion beam synthesized DLC films were investigated. Piezoresistive properties of the diamond like carbon and carbon nitride films were evaluated by four point bending test. The piezoresistors were fabricated on crystalline alumina substrates using Al-based interdigitated finger type electrodes. Effects of the nitrogen concentration on the piezoresistive gauge factor were investigated. The dependence of the resistance of the metal/a-CN
x:H/metal structures on temperature has been studied. Current–voltage (
I–
V) and capacitance–voltage characteristics were measured for a-CN
x:H/Si heterostructures. The main current transport mechanisms were analyzed. Optical parameters of the synthesized films such as optical bandgap and
B parameter (slope of the linear part of the Tauc plot) were investigated to study possible correlation with the piezoresistive properties.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2010.06.008</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Aluminum ; Carbon nitride ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Diamond like carbon ; Diamond-like carbon films ; Electrical properties ; Electrical properties of specific thin films ; Electrodes ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Gages ; Ion sources ; Materials science ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Specific materials ; Volt-ampere characteristics</subject><ispartof>Diamond and related materials, 2010-10, Vol.19 (10), p.1249-1253</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c371t-1dca43c09790ea32ba37a14cf091570c94be3874767d1605bcb08606941829b33</citedby><cites>FETCH-LOGICAL-c371t-1dca43c09790ea32ba37a14cf091570c94be3874767d1605bcb08606941829b33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.diamond.2010.06.008$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23233265$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Meškinis, Š.</creatorcontrib><creatorcontrib>Gudaitis, R.</creatorcontrib><creatorcontrib>Kopustinskas, V.</creatorcontrib><creatorcontrib>Tamulevičius, S.</creatorcontrib><creatorcontrib>Šlapikas, K.</creatorcontrib><title>Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films</title><title>Diamond and related materials</title><description>In the present study diamond like carbon (DLC) and carbon nitride (a-CN
x:H) films were deposited by closed drift ion source from the acetylene and nitrogen gas mixture. The piezoresistive, electrical and optical properties of ion beam synthesized DLC films were investigated. Piezoresistive properties of the diamond like carbon and carbon nitride films were evaluated by four point bending test. The piezoresistors were fabricated on crystalline alumina substrates using Al-based interdigitated finger type electrodes. Effects of the nitrogen concentration on the piezoresistive gauge factor were investigated. The dependence of the resistance of the metal/a-CN
x:H/metal structures on temperature has been studied. Current–voltage (
I–
V) and capacitance–voltage characteristics were measured for a-CN
x:H/Si heterostructures. The main current transport mechanisms were analyzed. Optical parameters of the synthesized films such as optical bandgap and
B parameter (slope of the linear part of the Tauc plot) were investigated to study possible correlation with the piezoresistive properties.</description><subject>Aluminum</subject><subject>Carbon nitride</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diamond like carbon</subject><subject>Diamond-like carbon films</subject><subject>Electrical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electrodes</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Gages</subject><subject>Ion sources</subject><subject>Materials science</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Volt-ampere characteristics</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkM1KxDAUhYMoOI4-gtCNuLH1JmnTZiUy-AcDutB1SNNbyNg2Y9IZ0Kc3M1PcuspNOOeenI-QSwoZBSpuV1ljde-GJmMQ30BkANURmdGqlCmAYMdkBpIVqRS8OCVnIawAKJM5nRH9ZvHHeQw2jHaLN4lbj9boLtFDk2CHZvT769q7NfrRYkhcm0x5SWc_MTHa127YG6ZxsNHVYNLarg_n5KTVXcCL6ZyTj8eH98Vzunx9elncL1PDSzqmtDE65wZkKQE1Z7Xmpaa5aUHSogQj8xp5VealKBsqoKhNDZUAEVtUTNacz8n1YW_86tcGw6h6Gwx2nR7QbYKqOGWUVZWMyuKgNN6F4LFVa2977b8VBbUjqlZqaqh2RBUIFYlG39WUoENk0no9GBv-zIwzzpkoou7uoMNYd2vRq2AsDgYb6yNQ1Tj7T9IvxWqO9A</recordid><startdate>20101001</startdate><enddate>20101001</enddate><creator>Meškinis, Š.</creator><creator>Gudaitis, R.</creator><creator>Kopustinskas, V.</creator><creator>Tamulevičius, S.</creator><creator>Šlapikas, K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20101001</creationdate><title>Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films</title><author>Meškinis, Š. ; Gudaitis, R. ; Kopustinskas, V. ; Tamulevičius, S. ; Šlapikas, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-1dca43c09790ea32ba37a14cf091570c94be3874767d1605bcb08606941829b33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Aluminum</topic><topic>Carbon nitride</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diamond like carbon</topic><topic>Diamond-like carbon films</topic><topic>Electrical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electrodes</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Gages</topic><topic>Ion sources</topic><topic>Materials science</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Volt-ampere characteristics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meškinis, Š.</creatorcontrib><creatorcontrib>Gudaitis, R.</creatorcontrib><creatorcontrib>Kopustinskas, V.</creatorcontrib><creatorcontrib>Tamulevičius, S.</creatorcontrib><creatorcontrib>Šlapikas, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meškinis, Š.</au><au>Gudaitis, R.</au><au>Kopustinskas, V.</au><au>Tamulevičius, S.</au><au>Šlapikas, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films</atitle><jtitle>Diamond and related materials</jtitle><date>2010-10-01</date><risdate>2010</risdate><volume>19</volume><issue>10</issue><spage>1249</spage><epage>1253</epage><pages>1249-1253</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>In the present study diamond like carbon (DLC) and carbon nitride (a-CN
x:H) films were deposited by closed drift ion source from the acetylene and nitrogen gas mixture. The piezoresistive, electrical and optical properties of ion beam synthesized DLC films were investigated. Piezoresistive properties of the diamond like carbon and carbon nitride films were evaluated by four point bending test. The piezoresistors were fabricated on crystalline alumina substrates using Al-based interdigitated finger type electrodes. Effects of the nitrogen concentration on the piezoresistive gauge factor were investigated. The dependence of the resistance of the metal/a-CN
x:H/metal structures on temperature has been studied. Current–voltage (
I–
V) and capacitance–voltage characteristics were measured for a-CN
x:H/Si heterostructures. The main current transport mechanisms were analyzed. Optical parameters of the synthesized films such as optical bandgap and
B parameter (slope of the linear part of the Tauc plot) were investigated to study possible correlation with the piezoresistive properties.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2010.06.008</doi><tpages>5</tpages></addata></record> |
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| subjects | Aluminum Carbon nitride Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Diamond like carbon Diamond-like carbon films Electrical properties Electrical properties of specific thin films Electrodes Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Fullerenes and related materials diamonds, graphite Gages Ion sources Materials science Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Specific materials Volt-ampere characteristics |
| title | Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T17%3A38%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Piezoresistive,%20optical%20and%20electrical%20properties%20of%20diamond%20like%20carbon%20and%20carbon%20nitride%20films&rft.jtitle=Diamond%20and%20related%20materials&rft.au=Me%C5%A1kinis,%20%C5%A0.&rft.date=2010-10-01&rft.volume=19&rft.issue=10&rft.spage=1249&rft.epage=1253&rft.pages=1249-1253&rft.issn=0925-9635&rft.eissn=1879-0062&rft_id=info:doi/10.1016/j.diamond.2010.06.008&rft_dat=%3Cproquest_cross%3E831212889%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=831212889&rft_id=info:pmid/&rft_els_id=S0925963510002153&rfr_iscdi=true |