NIR sensitivity enhancement by laser treatment for Si detectors

The light absorption coefficient of silicon is high in the short wavelengths, but much lower in the long wavelengths (longer than 900 nm). Thus it is necessary to use thicker silicon wafers to manufacture high-sensitivity light sensors for long wavelength applications. However, this imposes constrai...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-12, Vol.624 (2), p.520-523
Hauptverfasser:	Yamamoto, K., Sakamoto, A., Nagano, T., Fukumitsu, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Detectors Lasers NIR sensitivity enhancement Photodiodes Sensors Silicon Wafers Wavelengths
Online-Zugang:	Volltext
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