Structural and discharging properties of MgO thin films prepared by pulsed laser deposition
In this work, pulsed laser-deposited thin films of MgO were studied for application in plasma display panels. The firing voltage (FV) of discharge cells with MgO films was measured and the film structure was investigated as a function of film deposition conditions. MgO thin films were deposited at o...
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| Veröffentlicht in: | Thin solid films 2010-11, Vol.519 (2), p.846-851 |
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| creator | Kodu, M. Raud, J. Aints, M. Avarmaa, T. Denks, V. Choi, J.-S. Feldbach, E. Jaaniso, R. Kirm, M. Lee, M.-S. Maaroos, A. Matulevich, Y.T. Mändar, H. Sammelselg, V. |
| description | In this work, pulsed laser-deposited thin films of MgO were studied for application in plasma display panels. The firing voltage (FV) of discharge cells with MgO films was measured and the film structure was investigated as a function of film deposition conditions. MgO thin films were deposited at oxygen pressure and substrate temperature between 0.02–5
Pa and 260–600
°C, respectively. The structure of thin films was investigated by using X-ray diffraction, X-ray reflection and atomic force microscopy methods. It was found that the FV is strongly correlated with the film deposition conditions and structural properties. In general, the FV values were smaller for the films with higher crystallinity and density. The crystallinity and the density of the films increased when the deposition temperature was raised and the O
2 pressure was reduced. The lowest FV values (~
120
V) were obtained at the growth temperature of 550
°C and at O
2 pressures below 1
Pa. |
| doi_str_mv | 10.1016/j.tsf.2010.08.136 |
| format | Article |
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Pa and 260–600
°C, respectively. The structure of thin films was investigated by using X-ray diffraction, X-ray reflection and atomic force microscopy methods. It was found that the FV is strongly correlated with the film deposition conditions and structural properties. In general, the FV values were smaller for the films with higher crystallinity and density. The crystallinity and the density of the films increased when the deposition temperature was raised and the O
2 pressure was reduced. The lowest FV values (~
120
V) were obtained at the growth temperature of 550
°C and at O
2 pressures below 1
Pa.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.08.136</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Atomic structure ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystallinity ; Density ; Deposition ; Display ; Electronic devices ; Electronics ; Exact sciences and technology ; Firing ; Laser ablation ; Laser deposition ; Magnesium ; Magnesium oxide ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Oxides ; Physics ; Plasma display panels ; Structure and morphology; thickness ; Surface roughness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth ; Thin film structure and morphology ; Thin films ; X-rays</subject><ispartof>Thin solid films, 2010-11, Vol.519 (2), p.846-851</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-4a860c8a776a2852175571446bcf1320e2db0eeb01ef4263319db6f334ff3b003</citedby><cites>FETCH-LOGICAL-c359t-4a860c8a776a2852175571446bcf1320e2db0eeb01ef4263319db6f334ff3b003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.tsf.2010.08.136$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23753863$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kodu, M.</creatorcontrib><creatorcontrib>Raud, J.</creatorcontrib><creatorcontrib>Aints, M.</creatorcontrib><creatorcontrib>Avarmaa, T.</creatorcontrib><creatorcontrib>Denks, V.</creatorcontrib><creatorcontrib>Choi, J.-S.</creatorcontrib><creatorcontrib>Feldbach, E.</creatorcontrib><creatorcontrib>Jaaniso, R.</creatorcontrib><creatorcontrib>Kirm, M.</creatorcontrib><creatorcontrib>Lee, M.-S.</creatorcontrib><creatorcontrib>Maaroos, A.</creatorcontrib><creatorcontrib>Matulevich, Y.T.</creatorcontrib><creatorcontrib>Mändar, H.</creatorcontrib><creatorcontrib>Sammelselg, V.</creatorcontrib><title>Structural and discharging properties of MgO thin films prepared by pulsed laser deposition</title><title>Thin solid films</title><description>In this work, pulsed laser-deposited thin films of MgO were studied for application in plasma display panels. The firing voltage (FV) of discharge cells with MgO films was measured and the film structure was investigated as a function of film deposition conditions. MgO thin films were deposited at oxygen pressure and substrate temperature between 0.02–5
Pa and 260–600
°C, respectively. The structure of thin films was investigated by using X-ray diffraction, X-ray reflection and atomic force microscopy methods. It was found that the FV is strongly correlated with the film deposition conditions and structural properties. In general, the FV values were smaller for the films with higher crystallinity and density. The crystallinity and the density of the films increased when the deposition temperature was raised and the O
2 pressure was reduced. The lowest FV values (~
120
V) were obtained at the growth temperature of 550
°C and at O
2 pressures below 1
Pa.</description><subject>Applied sciences</subject><subject>Atomic structure</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystallinity</subject><subject>Density</subject><subject>Deposition</subject><subject>Display</subject><subject>Electronic devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Firing</subject><subject>Laser ablation</subject><subject>Laser deposition</subject><subject>Magnesium</subject><subject>Magnesium oxide</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Oxides</subject><subject>Physics</subject><subject>Plasma display panels</subject><subject>Structure and morphology; thickness</subject><subject>Surface roughness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>X-rays</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9UE1P4zAQtVYgbSn7A_bmC9pTythOHEecVtUuIIF6AE4cLMcZF1dpkrUdJP79umrFkdPM6H3MzCPkJ4MVAyavd6sU3YpDnkGtmJDfyIKpuil4LdgZWQCUUEho4Du5iHEHAIxzsSCvTynMNs3B9NQMHe18tG8mbP2wpVMYJwzJY6Sjo4_bDU1vfqDO9_uYQZxMwI62H3Sa-5i73kQMtMNpjD75cbgk585k5MepLsnL3z_P67viYXN7v_79UFhRNakojZJglalrabiqOKurqmZlKVvrmOCAvGsBsQWGruRSCNZ0rXRClM6JFkAsya-jbz7434wx6X3-AvveDDjOUSvBWKNK2WQmOzJtGGMM6PQU_N6ED81AH3LUO51z1IccNSidc8yaq5O7idb0LpjB-vgp5KKuhMpXLcnNkYf51XePQUfrcbDY-YA26W70X2z5D7u2iHI</recordid><startdate>20101101</startdate><enddate>20101101</enddate><creator>Kodu, M.</creator><creator>Raud, J.</creator><creator>Aints, M.</creator><creator>Avarmaa, T.</creator><creator>Denks, V.</creator><creator>Choi, J.-S.</creator><creator>Feldbach, E.</creator><creator>Jaaniso, R.</creator><creator>Kirm, M.</creator><creator>Lee, M.-S.</creator><creator>Maaroos, A.</creator><creator>Matulevich, Y.T.</creator><creator>Mändar, H.</creator><creator>Sammelselg, V.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20101101</creationdate><title>Structural and discharging properties of MgO thin films prepared by pulsed laser deposition</title><author>Kodu, M. ; Raud, J. ; Aints, M. ; Avarmaa, T. ; Denks, V. ; Choi, J.-S. ; Feldbach, E. ; Jaaniso, R. ; Kirm, M. ; Lee, M.-S. ; Maaroos, A. ; Matulevich, Y.T. ; Mändar, H. ; Sammelselg, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-4a860c8a776a2852175571446bcf1320e2db0eeb01ef4263319db6f334ff3b003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Atomic structure</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystallinity</topic><topic>Density</topic><topic>Deposition</topic><topic>Display</topic><topic>Electronic devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Firing</topic><topic>Laser ablation</topic><topic>Laser deposition</topic><topic>Magnesium</topic><topic>Magnesium oxide</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Oxides</topic><topic>Physics</topic><topic>Plasma display panels</topic><topic>Structure and morphology; thickness</topic><topic>Surface roughness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kodu, M.</creatorcontrib><creatorcontrib>Raud, J.</creatorcontrib><creatorcontrib>Aints, M.</creatorcontrib><creatorcontrib>Avarmaa, T.</creatorcontrib><creatorcontrib>Denks, V.</creatorcontrib><creatorcontrib>Choi, J.-S.</creatorcontrib><creatorcontrib>Feldbach, E.</creatorcontrib><creatorcontrib>Jaaniso, R.</creatorcontrib><creatorcontrib>Kirm, M.</creatorcontrib><creatorcontrib>Lee, M.-S.</creatorcontrib><creatorcontrib>Maaroos, A.</creatorcontrib><creatorcontrib>Matulevich, Y.T.</creatorcontrib><creatorcontrib>Mändar, H.</creatorcontrib><creatorcontrib>Sammelselg, V.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kodu, M.</au><au>Raud, J.</au><au>Aints, M.</au><au>Avarmaa, T.</au><au>Denks, V.</au><au>Choi, J.-S.</au><au>Feldbach, E.</au><au>Jaaniso, R.</au><au>Kirm, M.</au><au>Lee, M.-S.</au><au>Maaroos, A.</au><au>Matulevich, Y.T.</au><au>Mändar, H.</au><au>Sammelselg, V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and discharging properties of MgO thin films prepared by pulsed laser deposition</atitle><jtitle>Thin solid films</jtitle><date>2010-11-01</date><risdate>2010</risdate><volume>519</volume><issue>2</issue><spage>846</spage><epage>851</epage><pages>846-851</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>In this work, pulsed laser-deposited thin films of MgO were studied for application in plasma display panels. The firing voltage (FV) of discharge cells with MgO films was measured and the film structure was investigated as a function of film deposition conditions. MgO thin films were deposited at oxygen pressure and substrate temperature between 0.02–5
Pa and 260–600
°C, respectively. The structure of thin films was investigated by using X-ray diffraction, X-ray reflection and atomic force microscopy methods. It was found that the FV is strongly correlated with the film deposition conditions and structural properties. In general, the FV values were smaller for the films with higher crystallinity and density. The crystallinity and the density of the films increased when the deposition temperature was raised and the O
2 pressure was reduced. The lowest FV values (~
120
V) were obtained at the growth temperature of 550
°C and at O
2 pressures below 1
Pa.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2010.08.136</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Atomic structure Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallinity Density Deposition Display Electronic devices Electronics Exact sciences and technology Firing Laser ablation Laser deposition Magnesium Magnesium oxide Materials science Methods of deposition of films and coatings film growth and epitaxy Oxides Physics Plasma display panels Structure and morphology thickness Surface roughness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Thin films X-rays |
| title | Structural and discharging properties of MgO thin films prepared by pulsed laser deposition |
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