Correlations between Mechanical and Electrical Properties of Polythiophenes

The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS nano 2010-12, Vol.4 (12), p.7538-7544
Hauptverfasser: O’Connor, Brendan, Chan, Edwin P, Chan, Calvin, Conrad, Brad R, Richter, Lee J, Kline, R. Joseph, Heeney, Martin, McCulloch, Iain, Soles, Christopher L, DeLongchamp, Dean M
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 7544
container_issue 12
container_start_page 7538
container_title ACS nano
container_volume 4
creator O’Connor, Brendan
Chan, Edwin P
Chan, Calvin
Conrad, Brad R
Richter, Lee J
Kline, R. Joseph
Heeney, Martin
McCulloch, Iain
Soles, Christopher L
DeLongchamp, Dean M
description The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metrology, and the mobility is determined from the electrical characteristics of bottom contact thin film transistors. Moreover, the crack onset strain of pBTTT films is shown to be less than 2.5%, whereas that of P3HT is greater than 150%. These results show that increased long-range order in polythiophene semiconductors, which is generally thought to be essential for improved charge mobility, can also stiffen and enbrittle the film. This work highlights the critical role of quantitative mechanical property measurements in guiding the development of flexible organic semiconductors.
doi_str_mv 10.1021/nn1018768
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_821595854</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>821595854</sourcerecordid><originalsourceid>FETCH-LOGICAL-a380t-9618e46a9c1d00deef82fe5f855473295d1f00aa98200caaa67769d9d89a392e3</originalsourceid><addsrcrecordid>eNpt0E1Lw0AQBuBFFFurB_-A5CLioTqbZDe7Ryn1Ayv2oOAtTDcTmpLuxt0E6b832tqTp5mBhxfmZeycww2HmN9ay4GrTKoDNuQ6kWNQ8uNwvws-YCchrABE1qtjNog5KJCpGrLnifOeamwrZ0O0oPaLyEYvZJZoK4N1hLaIpjWZ1v-ec-8a8m1FIXJlNHf1pl1WrlmSpXDKjkqsA53t5oi930_fJo_j2evD0-RuNsZEQTvWkitKJWrDC4CCqFRxSaJUQqRZEmtR8BIAUasYwCCizDKpC10ojYmOKRmxq21u491nR6HN11UwVNdoyXUhVzEXWiiR9vJ6K413IXgq88ZXa_SbnEP-U12-r663F7vUbrGmYi__uurB5RagCfnKdd72T_4T9A0tDHUN</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>821595854</pqid></control><display><type>article</type><title>Correlations between Mechanical and Electrical Properties of Polythiophenes</title><source>ACS Publications</source><creator>O’Connor, Brendan ; Chan, Edwin P ; Chan, Calvin ; Conrad, Brad R ; Richter, Lee J ; Kline, R. Joseph ; Heeney, Martin ; McCulloch, Iain ; Soles, Christopher L ; DeLongchamp, Dean M</creator><creatorcontrib>O’Connor, Brendan ; Chan, Edwin P ; Chan, Calvin ; Conrad, Brad R ; Richter, Lee J ; Kline, R. Joseph ; Heeney, Martin ; McCulloch, Iain ; Soles, Christopher L ; DeLongchamp, Dean M</creatorcontrib><description>The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metrology, and the mobility is determined from the electrical characteristics of bottom contact thin film transistors. Moreover, the crack onset strain of pBTTT films is shown to be less than 2.5%, whereas that of P3HT is greater than 150%. These results show that increased long-range order in polythiophene semiconductors, which is generally thought to be essential for improved charge mobility, can also stiffen and enbrittle the film. This work highlights the critical role of quantitative mechanical property measurements in guiding the development of flexible organic semiconductors.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/nn1018768</identifier><identifier>PMID: 21080648</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>ACS nano, 2010-12, Vol.4 (12), p.7538-7544</ispartof><rights>Copyright © 2010 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a380t-9618e46a9c1d00deef82fe5f855473295d1f00aa98200caaa67769d9d89a392e3</citedby><cites>FETCH-LOGICAL-a380t-9618e46a9c1d00deef82fe5f855473295d1f00aa98200caaa67769d9d89a392e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nn1018768$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nn1018768$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/21080648$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>O’Connor, Brendan</creatorcontrib><creatorcontrib>Chan, Edwin P</creatorcontrib><creatorcontrib>Chan, Calvin</creatorcontrib><creatorcontrib>Conrad, Brad R</creatorcontrib><creatorcontrib>Richter, Lee J</creatorcontrib><creatorcontrib>Kline, R. Joseph</creatorcontrib><creatorcontrib>Heeney, Martin</creatorcontrib><creatorcontrib>McCulloch, Iain</creatorcontrib><creatorcontrib>Soles, Christopher L</creatorcontrib><creatorcontrib>DeLongchamp, Dean M</creatorcontrib><title>Correlations between Mechanical and Electrical Properties of Polythiophenes</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metrology, and the mobility is determined from the electrical characteristics of bottom contact thin film transistors. Moreover, the crack onset strain of pBTTT films is shown to be less than 2.5%, whereas that of P3HT is greater than 150%. These results show that increased long-range order in polythiophene semiconductors, which is generally thought to be essential for improved charge mobility, can also stiffen and enbrittle the film. This work highlights the critical role of quantitative mechanical property measurements in guiding the development of flexible organic semiconductors.</description><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpt0E1Lw0AQBuBFFFurB_-A5CLioTqbZDe7Ryn1Ayv2oOAtTDcTmpLuxt0E6b832tqTp5mBhxfmZeycww2HmN9ay4GrTKoDNuQ6kWNQ8uNwvws-YCchrABE1qtjNog5KJCpGrLnifOeamwrZ0O0oPaLyEYvZJZoK4N1hLaIpjWZ1v-ec-8a8m1FIXJlNHf1pl1WrlmSpXDKjkqsA53t5oi930_fJo_j2evD0-RuNsZEQTvWkitKJWrDC4CCqFRxSaJUQqRZEmtR8BIAUasYwCCizDKpC10ojYmOKRmxq21u491nR6HN11UwVNdoyXUhVzEXWiiR9vJ6K413IXgq88ZXa_SbnEP-U12-r663F7vUbrGmYi__uurB5RagCfnKdd72T_4T9A0tDHUN</recordid><startdate>20101228</startdate><enddate>20101228</enddate><creator>O’Connor, Brendan</creator><creator>Chan, Edwin P</creator><creator>Chan, Calvin</creator><creator>Conrad, Brad R</creator><creator>Richter, Lee J</creator><creator>Kline, R. Joseph</creator><creator>Heeney, Martin</creator><creator>McCulloch, Iain</creator><creator>Soles, Christopher L</creator><creator>DeLongchamp, Dean M</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20101228</creationdate><title>Correlations between Mechanical and Electrical Properties of Polythiophenes</title><author>O’Connor, Brendan ; Chan, Edwin P ; Chan, Calvin ; Conrad, Brad R ; Richter, Lee J ; Kline, R. Joseph ; Heeney, Martin ; McCulloch, Iain ; Soles, Christopher L ; DeLongchamp, Dean M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a380t-9618e46a9c1d00deef82fe5f855473295d1f00aa98200caaa67769d9d89a392e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>O’Connor, Brendan</creatorcontrib><creatorcontrib>Chan, Edwin P</creatorcontrib><creatorcontrib>Chan, Calvin</creatorcontrib><creatorcontrib>Conrad, Brad R</creatorcontrib><creatorcontrib>Richter, Lee J</creatorcontrib><creatorcontrib>Kline, R. Joseph</creatorcontrib><creatorcontrib>Heeney, Martin</creatorcontrib><creatorcontrib>McCulloch, Iain</creatorcontrib><creatorcontrib>Soles, Christopher L</creatorcontrib><creatorcontrib>DeLongchamp, Dean M</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>O’Connor, Brendan</au><au>Chan, Edwin P</au><au>Chan, Calvin</au><au>Conrad, Brad R</au><au>Richter, Lee J</au><au>Kline, R. Joseph</au><au>Heeney, Martin</au><au>McCulloch, Iain</au><au>Soles, Christopher L</au><au>DeLongchamp, Dean M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlations between Mechanical and Electrical Properties of Polythiophenes</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2010-12-28</date><risdate>2010</risdate><volume>4</volume><issue>12</issue><spage>7538</spage><epage>7544</epage><pages>7538-7544</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metrology, and the mobility is determined from the electrical characteristics of bottom contact thin film transistors. Moreover, the crack onset strain of pBTTT films is shown to be less than 2.5%, whereas that of P3HT is greater than 150%. These results show that increased long-range order in polythiophene semiconductors, which is generally thought to be essential for improved charge mobility, can also stiffen and enbrittle the film. This work highlights the critical role of quantitative mechanical property measurements in guiding the development of flexible organic semiconductors.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>21080648</pmid><doi>10.1021/nn1018768</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1936-0851
ispartof ACS nano, 2010-12, Vol.4 (12), p.7538-7544
issn 1936-0851
1936-086X
language eng
recordid cdi_proquest_miscellaneous_821595854
source ACS Publications
title Correlations between Mechanical and Electrical Properties of Polythiophenes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T14%3A50%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Correlations%20between%20Mechanical%20and%20Electrical%20Properties%20of%20Polythiophenes&rft.jtitle=ACS%20nano&rft.au=O%E2%80%99Connor,%20Brendan&rft.date=2010-12-28&rft.volume=4&rft.issue=12&rft.spage=7538&rft.epage=7544&rft.pages=7538-7544&rft.issn=1936-0851&rft.eissn=1936-086X&rft_id=info:doi/10.1021/nn1018768&rft_dat=%3Cproquest_cross%3E821595854%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=821595854&rft_id=info:pmid/21080648&rfr_iscdi=true