A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product

We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N+/P-well junction, and its current-voltage characteristics, responsivity, avalanche...

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Veröffentlicht in:	Optics express 2010-11, Vol.18 (23), p.24189-24194
Hauptverfasser:	Lee, Myung-Jae, Choi, Woo-Young
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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