Photoresponse induced by Ge nanodots on SiO2/Si substrate
Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the samp...
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| Veröffentlicht in: | Journal of non-crystalline solids 2010-08, Vol.356 (37-40), p.1940-1942 |
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| container_end_page | 1942 |
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| container_issue | 37-40 |
| container_start_page | 1940 |
| container_title | Journal of non-crystalline solids |
| container_volume | 356 |
| creator | CASTRUCCI, Paola DEL GOBBO, Silvano SPEISER, Eugen SCARSELLI, Manuela DE CRESCENZI, Maurizio AMIARD, Guillaume RONDA, Antoine BERBEZIER, Isabelle |
| description | Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence. |
| doi_str_mv | 10.1016/j.jnoncrysol.2010.05.040 |
| format | Article |
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The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.</description><identifier>ISSN: 0022-3093</identifier><identifier>EISSN: 1873-4812</identifier><identifier>DOI: 10.1016/j.jnoncrysol.2010.05.040</identifier><identifier>CODEN: JNCSBJ</identifier><language>eng</language><publisher>Oxford: Elsevier</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Deposition ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in multilayers, nanoscale materials and structures ; Exact sciences and technology ; Germanium ; Nanocomposites ; Nanocrystalline materials ; Nanomaterials ; Nanostructure ; Photocurrent ; Photoelectric effect ; Physics ; Silicon dioxide</subject><ispartof>Journal of non-crystalline solids, 2010-08, Vol.356 (37-40), p.1940-1942</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-62e034464d16157486accf5b9d5fb9bbfd87788572c0fbc3a0502990093924fb3</citedby><cites>FETCH-LOGICAL-c321t-62e034464d16157486accf5b9d5fb9bbfd87788572c0fbc3a0502990093924fb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23340668$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CASTRUCCI, Paola</creatorcontrib><creatorcontrib>DEL GOBBO, Silvano</creatorcontrib><creatorcontrib>SPEISER, Eugen</creatorcontrib><creatorcontrib>SCARSELLI, Manuela</creatorcontrib><creatorcontrib>DE CRESCENZI, Maurizio</creatorcontrib><creatorcontrib>AMIARD, Guillaume</creatorcontrib><creatorcontrib>RONDA, Antoine</creatorcontrib><creatorcontrib>BERBEZIER, Isabelle</creatorcontrib><title>Photoresponse induced by Ge nanodots on SiO2/Si substrate</title><title>Journal of non-crystalline solids</title><description>Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Deposition</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in multilayers, nanoscale materials and structures</subject><subject>Exact sciences and technology</subject><subject>Germanium</subject><subject>Nanocomposites</subject><subject>Nanocrystalline materials</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Photocurrent</subject><subject>Photoelectric effect</subject><subject>Physics</subject><subject>Silicon dioxide</subject><issn>0022-3093</issn><issn>1873-4812</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpFkM9LwzAUx4MoOKf_Qy7iqd1L0jbJUYZOYTBheg5JmmBLl8ykO-y_t2ND3-XB4_vj8UEIEygJkGbRl32IwaZjjkNJYTpDXUIFV2hGBGdFJQi9RjMASgsGkt2iu5x7mIYzMUPy4zuOMbm8jyE73IX2YF2LzRGvHA46xDaOGceAt92GLrYdzgeTx6RHd49uvB6ye7jsOfp6fflcvhXrzep9-bwuLKNkLBrqgFVVU7WkITWvRKOt9bWRbe2NNMa3gnMhak4teGOZhhqolDC9KmnlDZujp3PuPsWfg8uj2nXZumHQwcVDVlxwKhmXdFKKs9KmmHNyXu1Tt9PpqAioEyzVq39Y6gRLQa0mWJP18VKis9WDTzrYLv_5KWMVNI1gv2pFbQw</recordid><startdate>20100815</startdate><enddate>20100815</enddate><creator>CASTRUCCI, Paola</creator><creator>DEL GOBBO, Silvano</creator><creator>SPEISER, Eugen</creator><creator>SCARSELLI, Manuela</creator><creator>DE CRESCENZI, Maurizio</creator><creator>AMIARD, Guillaume</creator><creator>RONDA, Antoine</creator><creator>BERBEZIER, Isabelle</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100815</creationdate><title>Photoresponse induced by Ge nanodots on SiO2/Si substrate</title><author>CASTRUCCI, Paola ; DEL GOBBO, Silvano ; SPEISER, Eugen ; SCARSELLI, Manuela ; DE CRESCENZI, Maurizio ; AMIARD, Guillaume ; RONDA, Antoine ; BERBEZIER, Isabelle</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-62e034464d16157486accf5b9d5fb9bbfd87788572c0fbc3a0502990093924fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Deposition</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in multilayers, nanoscale materials and structures</topic><topic>Exact sciences and technology</topic><topic>Germanium</topic><topic>Nanocomposites</topic><topic>Nanocrystalline materials</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Photocurrent</topic><topic>Photoelectric effect</topic><topic>Physics</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CASTRUCCI, Paola</creatorcontrib><creatorcontrib>DEL GOBBO, Silvano</creatorcontrib><creatorcontrib>SPEISER, Eugen</creatorcontrib><creatorcontrib>SCARSELLI, Manuela</creatorcontrib><creatorcontrib>DE CRESCENZI, Maurizio</creatorcontrib><creatorcontrib>AMIARD, Guillaume</creatorcontrib><creatorcontrib>RONDA, Antoine</creatorcontrib><creatorcontrib>BERBEZIER, Isabelle</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of non-crystalline solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CASTRUCCI, Paola</au><au>DEL GOBBO, Silvano</au><au>SPEISER, Eugen</au><au>SCARSELLI, Manuela</au><au>DE CRESCENZI, Maurizio</au><au>AMIARD, Guillaume</au><au>RONDA, Antoine</au><au>BERBEZIER, Isabelle</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoresponse induced by Ge nanodots on SiO2/Si substrate</atitle><jtitle>Journal of non-crystalline solids</jtitle><date>2010-08-15</date><risdate>2010</risdate><volume>356</volume><issue>37-40</issue><spage>1940</spage><epage>1942</epage><pages>1940-1942</pages><issn>0022-3093</issn><eissn>1873-4812</eissn><coden>JNCSBJ</coden><abstract>Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current-voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.</abstract><cop>Oxford</cop><pub>Elsevier</pub><doi>10.1016/j.jnoncrysol.2010.05.040</doi><tpages>3</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Deposition Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Germanium Nanocomposites Nanocrystalline materials Nanomaterials Nanostructure Photocurrent Photoelectric effect Physics Silicon dioxide |
| title | Photoresponse induced by Ge nanodots on SiO2/Si substrate |
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