Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy

Cross-sectional scanning tunneling microscopy is used to study defects on the surface of semiconductor laser devices. Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in the laye...

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Veröffentlicht in:	Applied surface science 2010-07, Vol.256 (19), p.5736-5739
Hauptverfasser:	Cobley, R.J., Teng, K.S., Brown, M.R., Rees, P., Wilks, S.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaAs Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross sections Defects Devices Electron, ion, and scanning probe microscopy Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fundamental areas of phenomenology (including applications) Inclusions InP Lasers Mathematical models Optics Passivation Physics Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Scanning tunneling microscopy Scanning tunneling microscopy (STM) Semiconductor laser Semiconductor lasers Semiconductor lasers laser diodes Structure of solids and liquids crystallography Surface and interface electron states Surface chemistry Tunneling
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