Treatment of nanocrystalline diamond films by nitrogen implantation using PIII processing
The influence of N 2 Plasma Immersion Ion Implantation (PIII) on undoped nanocrystalline diamond (NCD) films grown on silicon substrate by CVD process using a hot filament reactor was systematically studied. Before and after the implantation, NCD films were investigated using scanning electron micro...
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| Veröffentlicht in: | Surface & coatings technology 2010-06, Vol.204 (18), p.3034-3038 |
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| creator | Miranda, C.R.B. Ueda, M. Baldan, M.R. Beloto, A.F. Ferreira, N.G. |
| description | The influence of N
2 Plasma Immersion Ion Implantation (PIII) on undoped nanocrystalline diamond (NCD) films grown on silicon substrate by CVD process using a hot filament reactor was systematically studied. Before and after the implantation, NCD films were investigated using scanning electron microscopy (SEM), high resolution X-ray diffraction (HRXRD) and Raman scattering spectroscopy. Significant changes in the film surface morphologies due to the plasma implantation treatment were observed. The NCD morphology changed from “cauliflower-like” to a smoother surface after the nitrogen-plasma immersion. The Raman spectra are similar for the three kind of electrodes before and after PIII of 15 and 30
min. Although a small difference among the ratios concerning the D and G Raman band intensities (
I
D/
I
G) may be observed that seems to increase after the plasma treatment, associated to the disorder increase caused by nitrogen incorporation in the sp
2 phase. Electrochemical response also showed that implanted NCD films had their electrical conductivity improved while the electron transfer kinetics decreased for such NCD films after 15 and 30
min of N
2 implantation. |
| doi_str_mv | 10.1016/j.surfcoat.2010.02.051 |
| format | Article |
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2 Plasma Immersion Ion Implantation (PIII) on undoped nanocrystalline diamond (NCD) films grown on silicon substrate by CVD process using a hot filament reactor was systematically studied. Before and after the implantation, NCD films were investigated using scanning electron microscopy (SEM), high resolution X-ray diffraction (HRXRD) and Raman scattering spectroscopy. Significant changes in the film surface morphologies due to the plasma implantation treatment were observed. The NCD morphology changed from “cauliflower-like” to a smoother surface after the nitrogen-plasma immersion. The Raman spectra are similar for the three kind of electrodes before and after PIII of 15 and 30
min. Although a small difference among the ratios concerning the D and G Raman band intensities (
I
D/
I
G) may be observed that seems to increase after the plasma treatment, associated to the disorder increase caused by nitrogen incorporation in the sp
2 phase. Electrochemical response also showed that implanted NCD films had their electrical conductivity improved while the electron transfer kinetics decreased for such NCD films after 15 and 30
min of N
2 implantation.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2010.02.051</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Chemical vapor deposition ; Cross-disciplinary physics: materials science; rheology ; Diamond ; Electrochemical properties ; Electrodes ; Exact sciences and technology ; Filaments ; Immersion ; Implantation ; Ion implantation technology ; Materials science ; Metals. Metallurgy ; Methods of deposition of films and coatings; film growth and epitaxy ; Morphology ; Nanocrystals ; Other surface treatments ; Physics ; Production techniques ; Scanning electron microscopy ; Silicon substrates ; Surface treatment ; Surface treatments</subject><ispartof>Surface & coatings technology, 2010-06, Vol.204 (18), p.3034-3038</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c455t-dca580125f9b08aaf0320fac0a1716b0e835951a8bca74be44eee1ee56d8999d3</citedby><cites>FETCH-LOGICAL-c455t-dca580125f9b08aaf0320fac0a1716b0e835951a8bca74be44eee1ee56d8999d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.surfcoat.2010.02.051$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,778,782,787,788,3539,23913,23914,25123,27907,27908,45978</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22946552$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Miranda, C.R.B.</creatorcontrib><creatorcontrib>Ueda, M.</creatorcontrib><creatorcontrib>Baldan, M.R.</creatorcontrib><creatorcontrib>Beloto, A.F.</creatorcontrib><creatorcontrib>Ferreira, N.G.</creatorcontrib><title>Treatment of nanocrystalline diamond films by nitrogen implantation using PIII processing</title><title>Surface & coatings technology</title><description>The influence of N
2 Plasma Immersion Ion Implantation (PIII) on undoped nanocrystalline diamond (NCD) films grown on silicon substrate by CVD process using a hot filament reactor was systematically studied. Before and after the implantation, NCD films were investigated using scanning electron microscopy (SEM), high resolution X-ray diffraction (HRXRD) and Raman scattering spectroscopy. Significant changes in the film surface morphologies due to the plasma implantation treatment were observed. The NCD morphology changed from “cauliflower-like” to a smoother surface after the nitrogen-plasma immersion. The Raman spectra are similar for the three kind of electrodes before and after PIII of 15 and 30
min. Although a small difference among the ratios concerning the D and G Raman band intensities (
I
D/
I
G) may be observed that seems to increase after the plasma treatment, associated to the disorder increase caused by nitrogen incorporation in the sp
2 phase. Electrochemical response also showed that implanted NCD films had their electrical conductivity improved while the electron transfer kinetics decreased for such NCD films after 15 and 30
min of N
2 implantation.</description><subject>Applied sciences</subject><subject>Chemical vapor deposition</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diamond</subject><subject>Electrochemical properties</subject><subject>Electrodes</subject><subject>Exact sciences and technology</subject><subject>Filaments</subject><subject>Immersion</subject><subject>Implantation</subject><subject>Ion implantation technology</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Morphology</subject><subject>Nanocrystals</subject><subject>Other surface treatments</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Scanning electron microscopy</subject><subject>Silicon substrates</subject><subject>Surface treatment</subject><subject>Surface treatments</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkMGKFDEQhoMoOK6-guQieumxku50OjdlUXdgQQ_rwVOoTleWDN3JmGSEeXt7nNXjeiqq-Kq-4mfstYCtANG_32_LMXuXsG4lrEOQW1DiCduIQZumbTv9lG1AKt0MRsvn7EUpewAQ2nQb9uMuE9aFYuXJ84gxuXwqFec5ROJTwCXFifswL4WPJx5DzemeIg_LYcZYsYYU-bGEeM-_7XY7fsjJUTn3L9kzj3OhVw_1in3__Onu-qa5_fpld_3xtnGdUrWZHKoBhFTejDAgemgleHSAQot-BBpaZZTAYXSou5G6jogEkeqnwRgztVfs7eXuqv55pFLtEoqjeX2P0rFYPWgppVZiJd89Soper39o1ekV7S-oy6mUTN4eclgwn6wAe07d7u3f1O05dQvSwh_HmwcHFoezzxhdKP-2pTRdr5RcuQ8XjtZofgXKtrhA0dEUMrlqpxT-p_oN4xSdOg</recordid><startdate>20100625</startdate><enddate>20100625</enddate><creator>Miranda, C.R.B.</creator><creator>Ueda, M.</creator><creator>Baldan, M.R.</creator><creator>Beloto, A.F.</creator><creator>Ferreira, N.G.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7QO</scope><scope>FR3</scope><scope>P64</scope></search><sort><creationdate>20100625</creationdate><title>Treatment of nanocrystalline diamond films by nitrogen implantation using PIII processing</title><author>Miranda, C.R.B. ; Ueda, M. ; Baldan, M.R. ; Beloto, A.F. ; Ferreira, N.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c455t-dca580125f9b08aaf0320fac0a1716b0e835951a8bca74be44eee1ee56d8999d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Chemical vapor deposition</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diamond</topic><topic>Electrochemical properties</topic><topic>Electrodes</topic><topic>Exact sciences and technology</topic><topic>Filaments</topic><topic>Immersion</topic><topic>Implantation</topic><topic>Ion implantation technology</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Morphology</topic><topic>Nanocrystals</topic><topic>Other surface treatments</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Scanning electron microscopy</topic><topic>Silicon substrates</topic><topic>Surface treatment</topic><topic>Surface treatments</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miranda, C.R.B.</creatorcontrib><creatorcontrib>Ueda, M.</creatorcontrib><creatorcontrib>Baldan, M.R.</creatorcontrib><creatorcontrib>Beloto, A.F.</creatorcontrib><creatorcontrib>Ferreira, N.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Biotechnology Research Abstracts</collection><collection>Engineering Research Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miranda, C.R.B.</au><au>Ueda, M.</au><au>Baldan, M.R.</au><au>Beloto, A.F.</au><au>Ferreira, N.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Treatment of nanocrystalline diamond films by nitrogen implantation using PIII processing</atitle><jtitle>Surface & coatings technology</jtitle><date>2010-06-25</date><risdate>2010</risdate><volume>204</volume><issue>18</issue><spage>3034</spage><epage>3038</epage><pages>3034-3038</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>The influence of N
2 Plasma Immersion Ion Implantation (PIII) on undoped nanocrystalline diamond (NCD) films grown on silicon substrate by CVD process using a hot filament reactor was systematically studied. Before and after the implantation, NCD films were investigated using scanning electron microscopy (SEM), high resolution X-ray diffraction (HRXRD) and Raman scattering spectroscopy. Significant changes in the film surface morphologies due to the plasma implantation treatment were observed. The NCD morphology changed from “cauliflower-like” to a smoother surface after the nitrogen-plasma immersion. The Raman spectra are similar for the three kind of electrodes before and after PIII of 15 and 30
min. Although a small difference among the ratios concerning the D and G Raman band intensities (
I
D/
I
G) may be observed that seems to increase after the plasma treatment, associated to the disorder increase caused by nitrogen incorporation in the sp
2 phase. Electrochemical response also showed that implanted NCD films had their electrical conductivity improved while the electron transfer kinetics decreased for such NCD films after 15 and 30
min of N
2 implantation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2010.02.051</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Applied sciences Chemical vapor deposition Cross-disciplinary physics: materials science rheology Diamond Electrochemical properties Electrodes Exact sciences and technology Filaments Immersion Implantation Ion implantation technology Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Morphology Nanocrystals Other surface treatments Physics Production techniques Scanning electron microscopy Silicon substrates Surface treatment Surface treatments |
| title | Treatment of nanocrystalline diamond films by nitrogen implantation using PIII processing |
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