Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range
Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320 K temperature range. The zero bias barrier height, ϕ bo and ideality factor, n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explaine...
Gespeichert in:
| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2010-07, Vol.171 (1), p.1-4 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4 |
|---|---|
| container_issue | 1 |
| container_start_page | 1 |
| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
| container_volume | 171 |
| creator | Mtangi, W. van Rensburg, P.J. Janse Diale, M. Auret, F.D. Nyamhere, C. Nel, J.M. Chawanda, A. |
| description | Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320
K temperature range. The zero bias barrier height,
ϕ
bo
and ideality factor,
n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explained as an effect of thermionic field emission. The deviation of the characteristics from the ideal thermionic behaviour is more pronounced with a decrease in temperature, in which the results obtained indicate the presence of other current transport mechanisms in the 60–280
K temperature range and the dominance of pure thermionic emission current at 300
K. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneities. |
| doi_str_mv | 10.1016/j.mseb.2010.03.044 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_787222339</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921510710001996</els_id><sourcerecordid>1786167084</sourcerecordid><originalsourceid>FETCH-LOGICAL-c475t-5684a89c789a531e34d798a2f24f3048d09916bffcd722a9527f0af4a23c77493</originalsourceid><addsrcrecordid>eNp9kM1OGzEQgK2qlZoCL9CTb-1lE__t2pa4RKgFJEQPlLNlvOPU6a432F6q3PoOvCFPgqNw5jTS6PtGmg-hr5QsKaHdarscMzwsGakLwpdEiA9oQZXkjdBCfEQLohltWkrkZ_Ql5y0hhDLGFmizjnbY55Dx5LGbU4JYXv4_P01DsRvAI9g8JxjrthIRr-fVbVjF5tLe4jv3Zyrl7x67KRbrKhAitvhf6AEXGHeQbKkuTjZu4BR98nbIcPY2T9D9zx-_L66am1-X1xfrm8YJ2Zam7ZSwSjuptG05BS56qZVlngnPiVA90Zp2D967XjJmdcukJ9YLy7iTUmh-gr4d7-7S9DhDLmYM2cEw2AjTnI1U1WOcH8jv75JUqo52kihRUXZEXZpyTuDNLoXRpr2hxBz6m6059DeH_oZwU_tX6fwoQX33KUAy2QWIDvqQwBXTT-E9_RV1i49A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1786167084</pqid></control><display><type>article</type><title>Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Mtangi, W. ; van Rensburg, P.J. Janse ; Diale, M. ; Auret, F.D. ; Nyamhere, C. ; Nel, J.M. ; Chawanda, A.</creator><creatorcontrib>Mtangi, W. ; van Rensburg, P.J. Janse ; Diale, M. ; Auret, F.D. ; Nyamhere, C. ; Nel, J.M. ; Chawanda, A.</creatorcontrib><description>Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320
K temperature range. The zero bias barrier height,
ϕ
bo
and ideality factor,
n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explained as an effect of thermionic field emission. The deviation of the characteristics from the ideal thermionic behaviour is more pronounced with a decrease in temperature, in which the results obtained indicate the presence of other current transport mechanisms in the 60–280
K temperature range and the dominance of pure thermionic emission current at 300
K. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneities.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2010.03.044</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Barriers ; Deviation ; Dominance ; GaN Schottky contacts ; Gold ; Inhomogeneities ; Nickel ; Schottky barrier height ; Temperature dependence ; Thermionic emission ; Thermionic field emission ; Thermionics ; Transport</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2010-07, Vol.171 (1), p.1-4</ispartof><rights>2010 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c475t-5684a89c789a531e34d798a2f24f3048d09916bffcd722a9527f0af4a23c77493</citedby><cites>FETCH-LOGICAL-c475t-5684a89c789a531e34d798a2f24f3048d09916bffcd722a9527f0af4a23c77493</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2010.03.044$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Mtangi, W.</creatorcontrib><creatorcontrib>van Rensburg, P.J. Janse</creatorcontrib><creatorcontrib>Diale, M.</creatorcontrib><creatorcontrib>Auret, F.D.</creatorcontrib><creatorcontrib>Nyamhere, C.</creatorcontrib><creatorcontrib>Nel, J.M.</creatorcontrib><creatorcontrib>Chawanda, A.</creatorcontrib><title>Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320
K temperature range. The zero bias barrier height,
ϕ
bo
and ideality factor,
n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explained as an effect of thermionic field emission. The deviation of the characteristics from the ideal thermionic behaviour is more pronounced with a decrease in temperature, in which the results obtained indicate the presence of other current transport mechanisms in the 60–280
K temperature range and the dominance of pure thermionic emission current at 300
K. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneities.</description><subject>Barriers</subject><subject>Deviation</subject><subject>Dominance</subject><subject>GaN Schottky contacts</subject><subject>Gold</subject><subject>Inhomogeneities</subject><subject>Nickel</subject><subject>Schottky barrier height</subject><subject>Temperature dependence</subject><subject>Thermionic emission</subject><subject>Thermionic field emission</subject><subject>Thermionics</subject><subject>Transport</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kM1OGzEQgK2qlZoCL9CTb-1lE__t2pa4RKgFJEQPlLNlvOPU6a432F6q3PoOvCFPgqNw5jTS6PtGmg-hr5QsKaHdarscMzwsGakLwpdEiA9oQZXkjdBCfEQLohltWkrkZ_Ql5y0hhDLGFmizjnbY55Dx5LGbU4JYXv4_P01DsRvAI9g8JxjrthIRr-fVbVjF5tLe4jv3Zyrl7x67KRbrKhAitvhf6AEXGHeQbKkuTjZu4BR98nbIcPY2T9D9zx-_L66am1-X1xfrm8YJ2Zam7ZSwSjuptG05BS56qZVlngnPiVA90Zp2D967XjJmdcukJ9YLy7iTUmh-gr4d7-7S9DhDLmYM2cEw2AjTnI1U1WOcH8jv75JUqo52kihRUXZEXZpyTuDNLoXRpr2hxBz6m6059DeH_oZwU_tX6fwoQX33KUAy2QWIDvqQwBXTT-E9_RV1i49A</recordid><startdate>20100725</startdate><enddate>20100725</enddate><creator>Mtangi, W.</creator><creator>van Rensburg, P.J. Janse</creator><creator>Diale, M.</creator><creator>Auret, F.D.</creator><creator>Nyamhere, C.</creator><creator>Nel, J.M.</creator><creator>Chawanda, A.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100725</creationdate><title>Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range</title><author>Mtangi, W. ; van Rensburg, P.J. Janse ; Diale, M. ; Auret, F.D. ; Nyamhere, C. ; Nel, J.M. ; Chawanda, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c475t-5684a89c789a531e34d798a2f24f3048d09916bffcd722a9527f0af4a23c77493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Barriers</topic><topic>Deviation</topic><topic>Dominance</topic><topic>GaN Schottky contacts</topic><topic>Gold</topic><topic>Inhomogeneities</topic><topic>Nickel</topic><topic>Schottky barrier height</topic><topic>Temperature dependence</topic><topic>Thermionic emission</topic><topic>Thermionic field emission</topic><topic>Thermionics</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mtangi, W.</creatorcontrib><creatorcontrib>van Rensburg, P.J. Janse</creatorcontrib><creatorcontrib>Diale, M.</creatorcontrib><creatorcontrib>Auret, F.D.</creatorcontrib><creatorcontrib>Nyamhere, C.</creatorcontrib><creatorcontrib>Nel, J.M.</creatorcontrib><creatorcontrib>Chawanda, A.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mtangi, W.</au><au>van Rensburg, P.J. Janse</au><au>Diale, M.</au><au>Auret, F.D.</au><au>Nyamhere, C.</au><au>Nel, J.M.</au><au>Chawanda, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2010-07-25</date><risdate>2010</risdate><volume>171</volume><issue>1</issue><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>Current–voltage characteristics of Au/Ni/n-GaN Schottky contacts have been measured in the 60–320
K temperature range. The zero bias barrier height,
ϕ
bo
and ideality factor,
n have been studied as a function of temperature. The sharp increase in ideality factor at low temperatures has been explained as an effect of thermionic field emission. The deviation of the characteristics from the ideal thermionic behaviour is more pronounced with a decrease in temperature, in which the results obtained indicate the presence of other current transport mechanisms in the 60–280
K temperature range and the dominance of pure thermionic emission current at 300
K. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneities.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2010.03.044</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-5107 |
| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2010-07, Vol.171 (1), p.1-4 |
| issn | 0921-5107 1873-4944 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_787222339 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Barriers Deviation Dominance GaN Schottky contacts Gold Inhomogeneities Nickel Schottky barrier height Temperature dependence Thermionic emission Thermionic field emission Thermionics Transport |
| title | Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T18%3A23%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20current%E2%80%93voltage%20measurements%20on%20Au/Ni/n-GaN%20Schottky%20contacts%20in%20a%20wide%20temperature%20range&rft.jtitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=Mtangi,%20W.&rft.date=2010-07-25&rft.volume=171&rft.issue=1&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=0921-5107&rft.eissn=1873-4944&rft_id=info:doi/10.1016/j.mseb.2010.03.044&rft_dat=%3Cproquest_cross%3E1786167084%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1786167084&rft_id=info:pmid/&rft_els_id=S0921510710001996&rfr_iscdi=true |