Epitaxial growth of Cr2O3 thin film on Al2O3 (0001 ) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing
We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas...
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| Veröffentlicht in: | Thin solid films 2010-06, Vol.518 (17), p.4813-4816 |
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| container_issue | 17 |
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| container_title | Thin solid films |
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| creator | JEONG, Sang-Yong LEE, Jin-Bok NA, Hyunseok SEONG, Tae-Yeon |
| description | We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD I[brvbar]-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3nm. |
| doi_str_mv | 10.1016/j.tsf.2010.01.046 |
| format | Article |
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It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD I[brvbar]-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3nm.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.01.046</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Aluminum oxide ; Annealing ; Chromium oxides ; Composition and phase identification ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Epitaxial growth ; Exact sciences and technology ; Magnetron sputtering ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Phase transformations ; Physics ; Radio frequencies ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth ; Thin film structure and morphology ; Thin films ; X-rays</subject><ispartof>Thin solid films, 2010-06, Vol.518 (17), p.4813-4816</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c237t-dddd1551b0a248cfc053e8e6f97bef4eeadcadc27ed8a6624a8fdfec7d8ff72c3</citedby><cites>FETCH-LOGICAL-c237t-dddd1551b0a248cfc053e8e6f97bef4eeadcadc27ed8a6624a8fdfec7d8ff72c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27926,27927</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22932568$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JEONG, Sang-Yong</creatorcontrib><creatorcontrib>LEE, Jin-Bok</creatorcontrib><creatorcontrib>NA, Hyunseok</creatorcontrib><creatorcontrib>SEONG, Tae-Yeon</creatorcontrib><title>Epitaxial growth of Cr2O3 thin film on Al2O3 (0001 ) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing</title><title>Thin solid films</title><description>We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD I[brvbar]-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3nm.</description><subject>Aluminum oxide</subject><subject>Annealing</subject><subject>Chromium oxides</subject><subject>Composition and phase identification</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Magnetron sputtering</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Phase transformations</subject><subject>Physics</subject><subject>Radio frequencies</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>X-rays</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo9kM9qGzEQxkVpoa7bB-hNl5L0sO5I-0frozFpEzDkkp7FrHZky-xqN5KM43foQ1cmIcPAMMP3zQw_xr4LWAkQza_jKkW7kpB7ECuomg9sIVq1LqQqxUe2AKigaGANn9mXGI8AIKQsF-zf3ewSvjgc-D5M53Tgk-XbIB9Lng7Oc-uGkU-eb4br6Pbq4z95PHUxBUzEuwsP2LuJ20DPJ_Lmwkfce0ohm-J8SomC83tuprFznnp-dvlGwNn1RTpQGPNh9J5wyKqv7JPFIdK3t7pkf3_fPW3vi93jn4ftZlcYWapU9DlEXYsOUFatsQbqklpq7Fp1ZCsi7E1OqahvsWlkha3tLRnVt9Yqacolu3ndO4cpPx2THl00NAzoaTpFrVqVSdZSZKV4VZowxRjI6jm4EcNFC9BX8PqoM3h9Ba9B6Aw-e368bcdocLABvXHx3SjlupR105b_ATY2hxs</recordid><startdate>20100630</startdate><enddate>20100630</enddate><creator>JEONG, Sang-Yong</creator><creator>LEE, Jin-Bok</creator><creator>NA, Hyunseok</creator><creator>SEONG, Tae-Yeon</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100630</creationdate><title>Epitaxial growth of Cr2O3 thin film on Al2O3 (0001 ) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing</title><author>JEONG, Sang-Yong ; LEE, Jin-Bok ; NA, Hyunseok ; SEONG, Tae-Yeon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c237t-dddd1551b0a248cfc053e8e6f97bef4eeadcadc27ed8a6624a8fdfec7d8ff72c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Aluminum oxide</topic><topic>Annealing</topic><topic>Chromium oxides</topic><topic>Composition and phase identification</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Magnetron sputtering</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Phase transformations</topic><topic>Physics</topic><topic>Radio frequencies</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JEONG, Sang-Yong</creatorcontrib><creatorcontrib>LEE, Jin-Bok</creatorcontrib><creatorcontrib>NA, Hyunseok</creatorcontrib><creatorcontrib>SEONG, Tae-Yeon</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JEONG, Sang-Yong</au><au>LEE, Jin-Bok</au><au>NA, Hyunseok</au><au>SEONG, Tae-Yeon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial growth of Cr2O3 thin film on Al2O3 (0001 ) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing</atitle><jtitle>Thin solid films</jtitle><date>2010-06-30</date><risdate>2010</risdate><volume>518</volume><issue>17</issue><spage>4813</spage><epage>4816</epage><pages>4813-4816</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>We prepared epitaxially grown Cr2O3 thin films on Al2O3 (0001) substrate by using radio frequency magnetron sputtering at room temperature followed by a rapid-thermal annealing process. It is shown that the phase and the crystallinity of as-grown samples depend on the flow ratios of the working gas (Ar/O2). X-ray diffraction (XRD) results show that oxygen-rich CrO3 phase having preferred orientation is formed when sputter-grown at room temperature under the working gas (Ar/O2) flow ratios of 9:1 and 7:3. XRD I[brvbar]-scanning results exhibit that annealing causes the oxygen-rich CrO3 phase to transform into epitaxial Cr2O3 phase, which is confirmed by X-ray photoemission spectroscopy. The samples grown at the gas flow ratio of 9:1 exhibit very smooth surfaces with root mean square roughness of 0.1-0.3nm.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.tsf.2010.01.046</doi><tpages>4</tpages></addata></record> |
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| subjects | Aluminum oxide Annealing Chromium oxides Composition and phase identification Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Epitaxial growth Exact sciences and technology Magnetron sputtering Materials science Methods of deposition of films and coatings film growth and epitaxy Phase transformations Physics Radio frequencies Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Thin films X-rays |
| title | Epitaxial growth of Cr2O3 thin film on Al2O3 (0001 ) substrate by radio frequency magnetron sputtering combined with rapid-thermal annealing |
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