The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance ( R C) with thermally grown SiO 2 gate dielectric on silicon wafer substra...

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Veröffentlicht in:	Thin solid films 2010-09, Vol.518 (22), p.6325-6329
Hauptverfasser:	Bae, Hyeon-seok, Kwon, Jae-Hong, Chang, Seongpil, Chung, Myung-Ho, Oh, Tae-Yeon, Park, Jung-Ho, Lee, Sang Yeol, Pak, James Jungho, Ju, Byeong-Kwon
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous indium gallium zinc oxide Annealing Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Contact resistance Contact resistance, contact potential Drains Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Exact sciences and technology Indium Oxide thin film transistor Physics Rapid thermal annealing Saturation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon substrates Thin film transistors Thin films Transistors Transmission line method (TLM) Zinc oxide
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