The effect of annealing on amorphous indium gallium zinc oxide thin film transistors
This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance ( R C) with thermally grown SiO 2 gate dielectric on silicon wafer substra...
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| Veröffentlicht in: | Thin solid films 2010-09, Vol.518 (22), p.6325-6329 |
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| creator | Bae, Hyeon-seok Kwon, Jae-Hong Chang, Seongpil Chung, Myung-Ho Oh, Tae-Yeon Park, Jung-Ho Lee, Sang Yeol Pak, James Jungho Ju, Byeong-Kwon |
| description | This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (
R
C) with thermally grown SiO
2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the
R
C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (
μ
sat), the on/off current ratio (
I
ON/OFF), and the drain current (
I
D) all increase, and the
R
C and the threshold voltage (
V
T) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (
μ
sat) as large as 0.027
cm
2/V
s,
I
ON/OFF of 10
3, sub-threshold swing (SS) of 0.49
V/decade,
V
T of 32.51
V, and
R
C of 969
MΩ, and the annealed TFTs have improved electrical characteristics as follows; a
μ
sat of 3.51
cm
2/V
s,
I
ON/OFF of 10
5, SS of 0.57
V/decade,
V
T of 27.2
V, and
R
C of 847
kΩ. |
| doi_str_mv | 10.1016/j.tsf.2010.02.073 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_787192114</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609010003573</els_id><sourcerecordid>787192114</sourcerecordid><originalsourceid>FETCH-LOGICAL-c425t-507b5ac310f8115babe6e4715be5e0cb8cabd41bcd121d04aecb62b42308074f3</originalsourceid><addsrcrecordid>eNp9kE9v2zAMxYWiA5Z2_QC96VLs5JSUZcvBTkOx_gEK7JKdBVmmEgW2lErOsO3TV0GCHXt6JPD4SP4Yu0VYImB7v1vO2S0FlB7EElR9wRbYqVUlVI2XbAEgoWphBZ_ZVc47AEAh6gVbr7fEyTmyM4-OmxDIjD5seAzcTDHtt_GQuQ-DP0x8Y8bxqP98sDz-8QPxeesDd36c-JxMyD7PMeUv7JMzY6abs16zX48_1g_P1evPp5eH76-VlaKZqwZU3xhbI7gOselNTy1JVSpqCGzfWdMPEns7oMABpCHbt6KXooYOlHT1Nft6yt2n-HagPOvJZ0vjaAKVs7XqFK4EoixOPDltijkncnqf_GTSX42gjwD1TheA-ghQg9AFYJm5O6ebbM3oyn_W5_-DohatVN2q-L6dfFRe_e0p6Ww9BUuDTwWrHqL_YMs7HpKGvw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>787192114</pqid></control><display><type>article</type><title>The effect of annealing on amorphous indium gallium zinc oxide thin film transistors</title><source>Elsevier ScienceDirect Journals</source><creator>Bae, Hyeon-seok ; Kwon, Jae-Hong ; Chang, Seongpil ; Chung, Myung-Ho ; Oh, Tae-Yeon ; Park, Jung-Ho ; Lee, Sang Yeol ; Pak, James Jungho ; Ju, Byeong-Kwon</creator><creatorcontrib>Bae, Hyeon-seok ; Kwon, Jae-Hong ; Chang, Seongpil ; Chung, Myung-Ho ; Oh, Tae-Yeon ; Park, Jung-Ho ; Lee, Sang Yeol ; Pak, James Jungho ; Ju, Byeong-Kwon</creatorcontrib><description>This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (
R
C) with thermally grown SiO
2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the
R
C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (
μ
sat), the on/off current ratio (
I
ON/OFF), and the drain current (
I
D) all increase, and the
R
C and the threshold voltage (
V
T) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (
μ
sat) as large as 0.027
cm
2/V
s,
I
ON/OFF of 10
3, sub-threshold swing (SS) of 0.49
V/decade,
V
T of 32.51
V, and
R
C of 969
MΩ, and the annealed TFTs have improved electrical characteristics as follows; a
μ
sat of 3.51
cm
2/V
s,
I
ON/OFF of 10
5, SS of 0.57
V/decade,
V
T of 27.2
V, and
R
C of 847
kΩ.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.02.073</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Amorphous indium gallium zinc oxide ; Annealing ; Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Contact resistance ; Contact resistance, contact potential ; Drains ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Electronics ; Exact sciences and technology ; Indium ; Oxide thin film transistor ; Physics ; Rapid thermal annealing ; Saturation ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon substrates ; Thin film transistors ; Thin films ; Transistors ; Transmission line method (TLM) ; Zinc oxide</subject><ispartof>Thin solid films, 2010-09, Vol.518 (22), p.6325-6329</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c425t-507b5ac310f8115babe6e4715be5e0cb8cabd41bcd121d04aecb62b42308074f3</citedby><cites>FETCH-LOGICAL-c425t-507b5ac310f8115babe6e4715be5e0cb8cabd41bcd121d04aecb62b42308074f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609010003573$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23264789$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bae, Hyeon-seok</creatorcontrib><creatorcontrib>Kwon, Jae-Hong</creatorcontrib><creatorcontrib>Chang, Seongpil</creatorcontrib><creatorcontrib>Chung, Myung-Ho</creatorcontrib><creatorcontrib>Oh, Tae-Yeon</creatorcontrib><creatorcontrib>Park, Jung-Ho</creatorcontrib><creatorcontrib>Lee, Sang Yeol</creatorcontrib><creatorcontrib>Pak, James Jungho</creatorcontrib><creatorcontrib>Ju, Byeong-Kwon</creatorcontrib><title>The effect of annealing on amorphous indium gallium zinc oxide thin film transistors</title><title>Thin solid films</title><description>This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (
R
C) with thermally grown SiO
2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the
R
C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (
μ
sat), the on/off current ratio (
I
ON/OFF), and the drain current (
I
D) all increase, and the
R
C and the threshold voltage (
V
T) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (
μ
sat) as large as 0.027
cm
2/V
s,
I
ON/OFF of 10
3, sub-threshold swing (SS) of 0.49
V/decade,
V
T of 32.51
V, and
R
C of 969
MΩ, and the annealed TFTs have improved electrical characteristics as follows; a
μ
sat of 3.51
cm
2/V
s,
I
ON/OFF of 10
5, SS of 0.57
V/decade,
V
T of 27.2
V, and
R
C of 847
kΩ.</description><subject>Amorphous indium gallium zinc oxide</subject><subject>Annealing</subject><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Contact resistance</subject><subject>Contact resistance, contact potential</subject><subject>Drains</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Indium</subject><subject>Oxide thin film transistor</subject><subject>Physics</subject><subject>Rapid thermal annealing</subject><subject>Saturation</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon substrates</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Transistors</subject><subject>Transmission line method (TLM)</subject><subject>Zinc oxide</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE9v2zAMxYWiA5Z2_QC96VLs5JSUZcvBTkOx_gEK7JKdBVmmEgW2lErOsO3TV0GCHXt6JPD4SP4Yu0VYImB7v1vO2S0FlB7EElR9wRbYqVUlVI2XbAEgoWphBZ_ZVc47AEAh6gVbr7fEyTmyM4-OmxDIjD5seAzcTDHtt_GQuQ-DP0x8Y8bxqP98sDz-8QPxeesDd36c-JxMyD7PMeUv7JMzY6abs16zX48_1g_P1evPp5eH76-VlaKZqwZU3xhbI7gOselNTy1JVSpqCGzfWdMPEns7oMABpCHbt6KXooYOlHT1Nft6yt2n-HagPOvJZ0vjaAKVs7XqFK4EoixOPDltijkncnqf_GTSX42gjwD1TheA-ghQg9AFYJm5O6ebbM3oyn_W5_-DohatVN2q-L6dfFRe_e0p6Ww9BUuDTwWrHqL_YMs7HpKGvw</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Bae, Hyeon-seok</creator><creator>Kwon, Jae-Hong</creator><creator>Chang, Seongpil</creator><creator>Chung, Myung-Ho</creator><creator>Oh, Tae-Yeon</creator><creator>Park, Jung-Ho</creator><creator>Lee, Sang Yeol</creator><creator>Pak, James Jungho</creator><creator>Ju, Byeong-Kwon</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100901</creationdate><title>The effect of annealing on amorphous indium gallium zinc oxide thin film transistors</title><author>Bae, Hyeon-seok ; Kwon, Jae-Hong ; Chang, Seongpil ; Chung, Myung-Ho ; Oh, Tae-Yeon ; Park, Jung-Ho ; Lee, Sang Yeol ; Pak, James Jungho ; Ju, Byeong-Kwon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c425t-507b5ac310f8115babe6e4715be5e0cb8cabd41bcd121d04aecb62b42308074f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Amorphous indium gallium zinc oxide</topic><topic>Annealing</topic><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Contact resistance</topic><topic>Contact resistance, contact potential</topic><topic>Drains</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Indium</topic><topic>Oxide thin film transistor</topic><topic>Physics</topic><topic>Rapid thermal annealing</topic><topic>Saturation</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon substrates</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Transistors</topic><topic>Transmission line method (TLM)</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bae, Hyeon-seok</creatorcontrib><creatorcontrib>Kwon, Jae-Hong</creatorcontrib><creatorcontrib>Chang, Seongpil</creatorcontrib><creatorcontrib>Chung, Myung-Ho</creatorcontrib><creatorcontrib>Oh, Tae-Yeon</creatorcontrib><creatorcontrib>Park, Jung-Ho</creatorcontrib><creatorcontrib>Lee, Sang Yeol</creatorcontrib><creatorcontrib>Pak, James Jungho</creatorcontrib><creatorcontrib>Ju, Byeong-Kwon</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bae, Hyeon-seok</au><au>Kwon, Jae-Hong</au><au>Chang, Seongpil</au><au>Chung, Myung-Ho</au><au>Oh, Tae-Yeon</au><au>Park, Jung-Ho</au><au>Lee, Sang Yeol</au><au>Pak, James Jungho</au><au>Ju, Byeong-Kwon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of annealing on amorphous indium gallium zinc oxide thin film transistors</atitle><jtitle>Thin solid films</jtitle><date>2010-09-01</date><risdate>2010</risdate><volume>518</volume><issue>22</issue><spage>6325</spage><epage>6329</epage><pages>6325-6329</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (
R
C) with thermally grown SiO
2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the
R
C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (
μ
sat), the on/off current ratio (
I
ON/OFF), and the drain current (
I
D) all increase, and the
R
C and the threshold voltage (
V
T) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (
μ
sat) as large as 0.027
cm
2/V
s,
I
ON/OFF of 10
3, sub-threshold swing (SS) of 0.49
V/decade,
V
T of 32.51
V, and
R
C of 969
MΩ, and the annealed TFTs have improved electrical characteristics as follows; a
μ
sat of 3.51
cm
2/V
s,
I
ON/OFF of 10
5, SS of 0.57
V/decade,
V
T of 27.2
V, and
R
C of 847
kΩ.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2010.02.073</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2010-09, Vol.518 (22), p.6325-6329 |
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| subjects | Amorphous indium gallium zinc oxide Annealing Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Contact resistance Contact resistance, contact potential Drains Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Exact sciences and technology Indium Oxide thin film transistor Physics Rapid thermal annealing Saturation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon substrates Thin film transistors Thin films Transistors Transmission line method (TLM) Zinc oxide |
| title | The effect of annealing on amorphous indium gallium zinc oxide thin film transistors |
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