Investigation of isothermal and no-isothermal oxidation of SiC powder using an analytic kinetic model
The oxidation of SiC powder has been investigated under non-isothermal and isothermal conditions. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) were employed to investigate the morphological development during the oxidation. The results show that the major oxidation pro...
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| Veröffentlicht in: | Applied surface science 2010-11, Vol.257 (2), p.463-467 |
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| creator | Li, Yong Yang, Yun Lin, Zhi-Ming Li, Jiang-Tao |
| description | The oxidation of SiC powder has been investigated under non-isothermal and isothermal conditions. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) were employed to investigate the morphological development during the oxidation. The results show that the major oxidation product was amorphous silica and the oxidation reaction was mainly diffusion-controlled. Based on limited experimental data, an analytic kinetic model, which expresses the oxidation weight gain as a function of time and temperature explicitly, has been used to predict the oxidation behavior of SiC powder. The comparison between experimental results and theoretical calculation shows that this new model works very well. The activation energy of non-isothermal and isothermal oxidation of SiC powder has been derived to be 226.5kJ/mol and 187.5kJ/mol, respectively. |
| doi_str_mv | 10.1016/j.apsusc.2010.07.012 |
| format | Article |
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X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) were employed to investigate the morphological development during the oxidation. The results show that the major oxidation product was amorphous silica and the oxidation reaction was mainly diffusion-controlled. Based on limited experimental data, an analytic kinetic model, which expresses the oxidation weight gain as a function of time and temperature explicitly, has been used to predict the oxidation behavior of SiC powder. The comparison between experimental results and theoretical calculation shows that this new model works very well. The activation energy of non-isothermal and isothermal oxidation of SiC powder has been derived to be 226.5kJ/mol and 187.5kJ/mol, respectively.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2010.07.012</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Analytic kinetic model ; Apparent activation energy ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Diffraction ; Disordered solids ; Exact sciences and technology ; Gain ; Materials science ; Mathematical analysis ; Mathematical models ; Oxidation ; Physics ; Powders, porous materials ; Reaction kinetics ; SiC powder ; Silicon carbide ; Single-crystal and powder diffraction ; Structure of solids and liquids; crystallography ; Surface treatments ; Transmission electron microscopy ; X-ray diffraction and scattering ; X-rays</subject><ispartof>Applied surface science, 2010-11, Vol.257 (2), p.463-467</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-a2689b3ab2eaca6c9afc8570d8524cfad40ca42926c49dc2a5785f2c667df5493</citedby><cites>FETCH-LOGICAL-c368t-a2689b3ab2eaca6c9afc8570d8524cfad40ca42926c49dc2a5785f2c667df5493</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0169433210009402$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23242174$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Yong</creatorcontrib><creatorcontrib>Yang, Yun</creatorcontrib><creatorcontrib>Lin, Zhi-Ming</creatorcontrib><creatorcontrib>Li, Jiang-Tao</creatorcontrib><title>Investigation of isothermal and no-isothermal oxidation of SiC powder using an analytic kinetic model</title><title>Applied surface science</title><description>The oxidation of SiC powder has been investigated under non-isothermal and isothermal conditions. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) were employed to investigate the morphological development during the oxidation. The results show that the major oxidation product was amorphous silica and the oxidation reaction was mainly diffusion-controlled. Based on limited experimental data, an analytic kinetic model, which expresses the oxidation weight gain as a function of time and temperature explicitly, has been used to predict the oxidation behavior of SiC powder. The comparison between experimental results and theoretical calculation shows that this new model works very well. The activation energy of non-isothermal and isothermal oxidation of SiC powder has been derived to be 226.5kJ/mol and 187.5kJ/mol, respectively.</description><subject>Analytic kinetic model</subject><subject>Apparent activation energy</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diffraction</subject><subject>Disordered solids</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Materials science</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Oxidation</subject><subject>Physics</subject><subject>Powders, porous materials</subject><subject>Reaction kinetics</subject><subject>SiC powder</subject><subject>Silicon carbide</subject><subject>Single-crystal and powder diffraction</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surface treatments</subject><subject>Transmission electron microscopy</subject><subject>X-ray diffraction and scattering</subject><subject>X-rays</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQQIMoWKv_wMNexNPWbDa7yV4EKX4UCh7Uc5hOsjV1m9RkW-2_N6VFPAkDAzNvZphHyGVBRwUt6pvFCFZxHXHEaCpRMaIFOyKDQooyryrJj8kgYU3Oy5KdkrMYFzQRqTsgZuI2JvZ2Dr31LvNtZqPv301YQpeB05nz-Z-K_7b6l3yx42zlv7QJ2TpaN098Cui2vcXswzqzy0uvTXdOTlroork45CF5e7h_HT_l0-fHyfhummNZyz4HVstmVsKMGUCosYEWZSWolhXj2ILmFIGzhtXIG40MKiGrlmFdC91WvCmH5Hq_dxX85zr9pZY2ouk6cMavoxJSJGGyYYnkexKDjzGYVq2CXULYqoKqnVS1UHupaidVUaGSsjR2dTgAEaFrAzi08XeWlYyzQvDE3e45k77dWBNURGscGm2DwV5pb_8_9AMJPZEH</recordid><startdate>20101101</startdate><enddate>20101101</enddate><creator>Li, Yong</creator><creator>Yang, Yun</creator><creator>Lin, Zhi-Ming</creator><creator>Li, Jiang-Tao</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20101101</creationdate><title>Investigation of isothermal and no-isothermal oxidation of SiC powder using an analytic kinetic model</title><author>Li, Yong ; Yang, Yun ; Lin, Zhi-Ming ; Li, Jiang-Tao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-a2689b3ab2eaca6c9afc8570d8524cfad40ca42926c49dc2a5785f2c667df5493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Analytic kinetic model</topic><topic>Apparent activation energy</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diffraction</topic><topic>Disordered solids</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Materials science</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Oxidation</topic><topic>Physics</topic><topic>Powders, porous materials</topic><topic>Reaction kinetics</topic><topic>SiC powder</topic><topic>Silicon carbide</topic><topic>Single-crystal and powder diffraction</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surface treatments</topic><topic>Transmission electron microscopy</topic><topic>X-ray diffraction and scattering</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yong</creatorcontrib><creatorcontrib>Yang, Yun</creatorcontrib><creatorcontrib>Lin, Zhi-Ming</creatorcontrib><creatorcontrib>Li, Jiang-Tao</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Yong</au><au>Yang, Yun</au><au>Lin, Zhi-Ming</au><au>Li, Jiang-Tao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of isothermal and no-isothermal oxidation of SiC powder using an analytic kinetic model</atitle><jtitle>Applied surface science</jtitle><date>2010-11-01</date><risdate>2010</risdate><volume>257</volume><issue>2</issue><spage>463</spage><epage>467</epage><pages>463-467</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>The oxidation of SiC powder has been investigated under non-isothermal and isothermal conditions. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) were employed to investigate the morphological development during the oxidation. The results show that the major oxidation product was amorphous silica and the oxidation reaction was mainly diffusion-controlled. Based on limited experimental data, an analytic kinetic model, which expresses the oxidation weight gain as a function of time and temperature explicitly, has been used to predict the oxidation behavior of SiC powder. The comparison between experimental results and theoretical calculation shows that this new model works very well. The activation energy of non-isothermal and isothermal oxidation of SiC powder has been derived to be 226.5kJ/mol and 187.5kJ/mol, respectively.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2010.07.012</doi><tpages>5</tpages></addata></record> |
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| subjects | Analytic kinetic model Apparent activation energy Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffraction Disordered solids Exact sciences and technology Gain Materials science Mathematical analysis Mathematical models Oxidation Physics Powders, porous materials Reaction kinetics SiC powder Silicon carbide Single-crystal and powder diffraction Structure of solids and liquids crystallography Surface treatments Transmission electron microscopy X-ray diffraction and scattering X-rays |
| title | Investigation of isothermal and no-isothermal oxidation of SiC powder using an analytic kinetic model |
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