Two-Dimensional Carrier Profiling by Scanning Tunneling Microscopy and Its Application to Advanced Device Development

A high-resolution two-dimensional (2D) carrier profiling technique has been desired to optimize the dopant profile around the source/drain and extension region in transistors to enhance electrical characteristics when scaling the gate length down to less than 50 nm. At Fujitsu Semiconductor Ltd., hi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Fujitsu scientific & technical journal 2010-07, Vol.46 (3), p.237-242
1. Verfasser:	Fukutome, Hidenobu
Format:	Artikel
Sprache:	eng
Schlagworte:	Carriers Devices Dopants Drains Fluctuation Gates Profiling Retarding Roughness Scanning tunneling microscopy Semiconductor devices Semiconductors Spatial resolution Transistors Two dimensional
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!