Preparation and structural properties of YBCO films grown on GaN/ c-sapphire hexagonal substrate

Epitaxial YBCO thin films have been grown on hexagonal GaN/ c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented gr...

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Veröffentlicht in:	Applied surface science 2010-07, Vol.256 (18), p.5618-5622
Hauptverfasser:	Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbík, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Auger electron spectroscopy Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Diffraction Direct current Electron and ion emission by liquids and solids impact phenomena Epitaxial growth Exact sciences and technology Gallium Gallium nitrides GaN substrates Infrared and Raman spectra Magnetron sputtering Materials science Maxima Methods of deposition of films and coatings film growth and epitaxy Photoemission and photoelectron spectra Physics Pulsed laser deposition (PLD) Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Transmission electron microscopy X-ray diffraction X-rays YBCO superconductors YBCO thin films
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