Structural and magnetic properties of GaGdN/GaN superlattice structures

GaGdN/GaN superlattices (SLs) having various GaGdN and GaN layer thicknesses were grown on Al 2O 3 (0001) substrates by radio frequency molecular beam epitaxy and their structural and magnetic properties were investigated. By changing the thickness of GaGdN and GaN layer in the GaGdN/GaN SL, we find...

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Veröffentlicht in:	Thin solid films 2010-08, Vol.518 (20), p.5659-5661
Hauptverfasser:	Zhou, YiKai, Choi, SungWoo, Kimura, Shigeya, Emura, Shuichi, Hasegawa, Shigehiko, Asahi, Hajime
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Carrier density Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Ferromagnetic semiconductor Gallium nitrides GaN-based diluted semiconductor Lattice parameters Magnetic properties Magnetic properties and materials Magnetic properties of monolayers and thin films Magnetic properties of surface, thin films and multilayers Magnetization Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanospintronics Other semiconductors Physics Solvents Specific materials Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films
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