Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study
Indium oxide films are deposited by pulsed laser deposition in the presence of oxygen atmosphere, on different substrates, namely GaAs, Si, quartz, and glass. The structural, morphological, and interface characteristics are studied. Cubic In 2O 3 phase is confirmed by high resolution X-ray diffracti...
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| Veröffentlicht in: | Applied surface science 2010-09, Vol.256 (23), p.7091-7095 |
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| creator | Tripathi, Neeti Rath, Shyama Ganesan, V. Choudhary, R.J. |
| description | Indium oxide films are deposited by pulsed laser deposition in the presence of oxygen atmosphere, on different substrates, namely GaAs, Si, quartz, and glass. The structural, morphological, and interface characteristics are studied. Cubic In
2O
3 phase is confirmed by high resolution X-ray diffraction measurements. While the films on Si, glass, and quartz substrates are polycrystalline, the films on GaAs exhibit a preferred orientation along (2
2
2) plane. The structure and crystalline nature of the films are also confirmed by Raman spectroscopy. Furthermore, Raman spectra show the appearance of gallium oxide modes arising due to Ga diffusion from the substrate. The morphology of the films deposited on different substrates is studied by atomic force microscopy and
rms roughness values are obtained. A two-dimensional power spectral density analysis has been used to calculate the growth exponent (
α). A value of
α
>
1 (
α
<
1) for films grown on GaAs/Si (quartz/glass) substrates suggests that the growth on crystalline substrates is governed by the linear diffusion model, whereas the growth on amorphous substrates follows the dynamic scaling behaviour. UV–visible study shows a high optical transmittance of >90% and a band gap value of 3.64 and 3.79
eV for the films deposited on quartz and glass substrates, respectively. |
| doi_str_mv | 10.1016/j.apsusc.2010.05.033 |
| format | Article |
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2O
3 phase is confirmed by high resolution X-ray diffraction measurements. While the films on Si, glass, and quartz substrates are polycrystalline, the films on GaAs exhibit a preferred orientation along (2
2
2) plane. The structure and crystalline nature of the films are also confirmed by Raman spectroscopy. Furthermore, Raman spectra show the appearance of gallium oxide modes arising due to Ga diffusion from the substrate. The morphology of the films deposited on different substrates is studied by atomic force microscopy and
rms roughness values are obtained. A two-dimensional power spectral density analysis has been used to calculate the growth exponent (
α). A value of
α
>
1 (
α
<
1) for films grown on GaAs/Si (quartz/glass) substrates suggests that the growth on crystalline substrates is governed by the linear diffusion model, whereas the growth on amorphous substrates follows the dynamic scaling behaviour. UV–visible study shows a high optical transmittance of >90% and a band gap value of 3.64 and 3.79
eV for the films deposited on quartz and glass substrates, respectively.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2010.05.033</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>AFM ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Diffusion ; Dynamics ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; Glass ; Indium oxide ; Indium oxides ; Infrared and Raman spectra ; Infrared and raman spectra and scattering ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; Power spectral density ; Pulsed laser deposition ; Quartz ; Raman spectroscopy ; Silicon substrates ; XRD</subject><ispartof>Applied surface science, 2010-09, Vol.256 (23), p.7091-7095</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-71723a3ad71b0643cbfa3470fd2efcc785fd9b2002a43dc322a9c8cddc6620993</citedby><cites>FETCH-LOGICAL-c368t-71723a3ad71b0643cbfa3470fd2efcc785fd9b2002a43dc322a9c8cddc6620993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0169433210007130$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23054549$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tripathi, Neeti</creatorcontrib><creatorcontrib>Rath, Shyama</creatorcontrib><creatorcontrib>Ganesan, V.</creatorcontrib><creatorcontrib>Choudhary, R.J.</creatorcontrib><title>Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study</title><title>Applied surface science</title><description>Indium oxide films are deposited by pulsed laser deposition in the presence of oxygen atmosphere, on different substrates, namely GaAs, Si, quartz, and glass. The structural, morphological, and interface characteristics are studied. Cubic In
2O
3 phase is confirmed by high resolution X-ray diffraction measurements. While the films on Si, glass, and quartz substrates are polycrystalline, the films on GaAs exhibit a preferred orientation along (2
2
2) plane. The structure and crystalline nature of the films are also confirmed by Raman spectroscopy. Furthermore, Raman spectra show the appearance of gallium oxide modes arising due to Ga diffusion from the substrate. The morphology of the films deposited on different substrates is studied by atomic force microscopy and
rms roughness values are obtained. A two-dimensional power spectral density analysis has been used to calculate the growth exponent (
α). A value of
α
>
1 (
α
<
1) for films grown on GaAs/Si (quartz/glass) substrates suggests that the growth on crystalline substrates is governed by the linear diffusion model, whereas the growth on amorphous substrates follows the dynamic scaling behaviour. UV–visible study shows a high optical transmittance of >90% and a band gap value of 3.64 and 3.79
eV for the films deposited on quartz and glass substrates, respectively.</description><subject>AFM</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Diffusion</subject><subject>Dynamics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Glass</subject><subject>Indium oxide</subject><subject>Indium oxides</subject><subject>Infrared and Raman spectra</subject><subject>Infrared and raman spectra and scattering</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><subject>Power spectral density</subject><subject>Pulsed laser deposition</subject><subject>Quartz</subject><subject>Raman spectroscopy</subject><subject>Silicon substrates</subject><subject>XRD</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE1vFDEMhiMEEkvhH3DIBXGarSeZzAcHJFSVglSJC1yJso6jZjVfxBlg_z1ZbcWxJ8v2Y7_2K8TbGvY11O31ce9W3hj3CkoJzB60fiZ2dd_pypi-eS52BRuqRmv1UrxiPgLUqnR34uddWv7kB-lPs5sislyCXLeRycvRMSXpaV045pLH2cdtksvf6EnmhzjLEMeJP0gneTtwTi7TGafZ05wl582fXosXwZVtbx7jlfjx-fb7zZfq_tvd15tP9xXqts9VV3dKO-18Vx-gbTQegtNNB8ErCohdb4IfDgpAuUZ71Eq5AXv0HttWwTDoK_H-sndNy6-NONspMtI4upmWjW3Xd2C0UVDI5kJiWpgTBbumOLl0sjXYs5v2aC9u2rObFowtbpaxd48CjtGNIbkZI_-fVRpMY5rzIR8vHJVvf0dKljHSjORjIszWL_FpoX879I48</recordid><startdate>20100915</startdate><enddate>20100915</enddate><creator>Tripathi, Neeti</creator><creator>Rath, Shyama</creator><creator>Ganesan, V.</creator><creator>Choudhary, R.J.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100915</creationdate><title>Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study</title><author>Tripathi, Neeti ; Rath, Shyama ; Ganesan, V. ; Choudhary, R.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-71723a3ad71b0643cbfa3470fd2efcc785fd9b2002a43dc322a9c8cddc6620993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>AFM</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Diffusion</topic><topic>Dynamics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Glass</topic><topic>Indium oxide</topic><topic>Indium oxides</topic><topic>Infrared and Raman spectra</topic><topic>Infrared and raman spectra and scattering</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><topic>Power spectral density</topic><topic>Pulsed laser deposition</topic><topic>Quartz</topic><topic>Raman spectroscopy</topic><topic>Silicon substrates</topic><topic>XRD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tripathi, Neeti</creatorcontrib><creatorcontrib>Rath, Shyama</creatorcontrib><creatorcontrib>Ganesan, V.</creatorcontrib><creatorcontrib>Choudhary, R.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tripathi, Neeti</au><au>Rath, Shyama</au><au>Ganesan, V.</au><au>Choudhary, R.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study</atitle><jtitle>Applied surface science</jtitle><date>2010-09-15</date><risdate>2010</risdate><volume>256</volume><issue>23</issue><spage>7091</spage><epage>7095</epage><pages>7091-7095</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Indium oxide films are deposited by pulsed laser deposition in the presence of oxygen atmosphere, on different substrates, namely GaAs, Si, quartz, and glass. The structural, morphological, and interface characteristics are studied. Cubic In
2O
3 phase is confirmed by high resolution X-ray diffraction measurements. While the films on Si, glass, and quartz substrates are polycrystalline, the films on GaAs exhibit a preferred orientation along (2
2
2) plane. The structure and crystalline nature of the films are also confirmed by Raman spectroscopy. Furthermore, Raman spectra show the appearance of gallium oxide modes arising due to Ga diffusion from the substrate. The morphology of the films deposited on different substrates is studied by atomic force microscopy and
rms roughness values are obtained. A two-dimensional power spectral density analysis has been used to calculate the growth exponent (
α). A value of
α
>
1 (
α
<
1) for films grown on GaAs/Si (quartz/glass) substrates suggests that the growth on crystalline substrates is governed by the linear diffusion model, whereas the growth on amorphous substrates follows the dynamic scaling behaviour. UV–visible study shows a high optical transmittance of >90% and a band gap value of 3.64 and 3.79
eV for the films deposited on quartz and glass substrates, respectively.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2010.05.033</doi><tpages>5</tpages></addata></record> |
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| subjects | AFM Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition Diffusion Dynamics Exact sciences and technology Gallium arsenide Gallium arsenides Glass Indium oxide Indium oxides Infrared and Raman spectra Infrared and raman spectra and scattering Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Power spectral density Pulsed laser deposition Quartz Raman spectroscopy Silicon substrates XRD |
| title | Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study |
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