Fabrication and characterization of Schottky diodes and thin films based on poly(o-toluidine) deposited by spincoating technique
Poly(o-toluidine) (POT) thin films were fabricated by spin coating on bare glass and indium–tin–oxide (ITO)-coated glass substrates, from a solution of poly(o-toluidine) in chloroform. The optical transmittance of the as-deposited and doped films was measured in the 250–1200 nm wavelength range. The...
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| Veröffentlicht in: | Synthetic metals 2010-07, Vol.160 (13), p.1487-1492 |
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| creator | Elmansouri, A. Outzourhit, A. Oueriagli, A. Lachkar, A. Hadik, N. Achour, M.E. Abouelaoualim, A. Malaoui, A. Berrada, K. Ameziane, E.L. |
| description | Poly(o-toluidine) (POT) thin films were fabricated by spin coating on bare glass and indium–tin–oxide (ITO)-coated glass substrates, from a solution of poly(o-toluidine) in chloroform. The optical transmittance of the as-deposited and doped films was measured in the 250–1200
nm wavelength range. These measurements showed that the optical band gaps of the undoped and doped polymer films are on the order of 3.28 and 2.7
eV, respectively, and that doping increases absorption in the near infrared region. The FT-Raman measurement on spincoated POT film is comparable to that of polyaniline. The electrochemical properties of those thin films are presented using cyclic voltammetry. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The current–voltage characteristics of the devices indicate a Schottky diode-type behavior. The current–voltage characteristics can be fitted using the modified Shockley equation. The diode parameters were calculated from
I–
V characteristics and discussed. On the other hand, capacitance of these structures decreased with increasing frequency. |
| doi_str_mv | 10.1016/j.synthmet.2010.05.008 |
| format | Article |
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nm wavelength range. These measurements showed that the optical band gaps of the undoped and doped polymer films are on the order of 3.28 and 2.7
eV, respectively, and that doping increases absorption in the near infrared region. The FT-Raman measurement on spincoated POT film is comparable to that of polyaniline. The electrochemical properties of those thin films are presented using cyclic voltammetry. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The current–voltage characteristics of the devices indicate a Schottky diode-type behavior. The current–voltage characteristics can be fitted using the modified Shockley equation. The diode parameters were calculated from
I–
V characteristics and discussed. On the other hand, capacitance of these structures decreased with increasing frequency.</description><identifier>ISSN: 0379-6779</identifier><identifier>EISSN: 1879-3290</identifier><identifier>DOI: 10.1016/j.synthmet.2010.05.008</identifier><identifier>CODEN: SYMEDZ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Aluminum ; Application fields ; Applied sciences ; Deposition ; Devices ; Diodes ; Doped films ; Electrical properties ; Electronics ; Energy gaps (solid state) ; Exact sciences and technology ; Glass ; Mathematical analysis ; Poly(o-toluidine) ; Polymer industry, paints, wood ; Schottky diode ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spin coating ; Spincoating ; Technology of polymers ; Thin films</subject><ispartof>Synthetic metals, 2010-07, Vol.160 (13), p.1487-1492</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-3e25af087cf1c36b39951fa72b330ee24be2e458e683838c7f77b3ba6074b4323</citedby><cites>FETCH-LOGICAL-c374t-3e25af087cf1c36b39951fa72b330ee24be2e458e683838c7f77b3ba6074b4323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0379677910001931$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23008979$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Elmansouri, A.</creatorcontrib><creatorcontrib>Outzourhit, A.</creatorcontrib><creatorcontrib>Oueriagli, A.</creatorcontrib><creatorcontrib>Lachkar, A.</creatorcontrib><creatorcontrib>Hadik, N.</creatorcontrib><creatorcontrib>Achour, M.E.</creatorcontrib><creatorcontrib>Abouelaoualim, A.</creatorcontrib><creatorcontrib>Malaoui, A.</creatorcontrib><creatorcontrib>Berrada, K.</creatorcontrib><creatorcontrib>Ameziane, E.L.</creatorcontrib><title>Fabrication and characterization of Schottky diodes and thin films based on poly(o-toluidine) deposited by spincoating technique</title><title>Synthetic metals</title><description>Poly(o-toluidine) (POT) thin films were fabricated by spin coating on bare glass and indium–tin–oxide (ITO)-coated glass substrates, from a solution of poly(o-toluidine) in chloroform. The optical transmittance of the as-deposited and doped films was measured in the 250–1200
nm wavelength range. These measurements showed that the optical band gaps of the undoped and doped polymer films are on the order of 3.28 and 2.7
eV, respectively, and that doping increases absorption in the near infrared region. The FT-Raman measurement on spincoated POT film is comparable to that of polyaniline. The electrochemical properties of those thin films are presented using cyclic voltammetry. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The current–voltage characteristics of the devices indicate a Schottky diode-type behavior. The current–voltage characteristics can be fitted using the modified Shockley equation. The diode parameters were calculated from
I–
V characteristics and discussed. On the other hand, capacitance of these structures decreased with increasing frequency.</description><subject>Aluminum</subject><subject>Application fields</subject><subject>Applied sciences</subject><subject>Deposition</subject><subject>Devices</subject><subject>Diodes</subject><subject>Doped films</subject><subject>Electrical properties</subject><subject>Electronics</subject><subject>Energy gaps (solid state)</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>Mathematical analysis</subject><subject>Poly(o-toluidine)</subject><subject>Polymer industry, paints, wood</subject><subject>Schottky diode</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spin coating</subject><subject>Spincoating</subject><subject>Technology of polymers</subject><subject>Thin films</subject><issn>0379-6779</issn><issn>1879-3290</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkE2P1DAMhiMEEsPCX0C5IODQIR9t095AK5ZFWokDcI6S1KEeOklJMkjlxE8ny-xyRT7Ysh_7lV9CnnO254z3bw77vIUyH6HsBatN1u0ZGx6QHR_U2Egxsodkx2Ste6XGx-RJzgfGGB9FtyO_r4xN6EzBGKgJE3WzScYVSPjr3IyefnZzLOX7RieME-S_XJkxUI_LMVNrMky0omtctlexKXE54YQBXtMJ1pix1LHdaF4xuFivhm-0gJsD_jjBU_LImyXDs7t8Qb5evf9yed3cfPrw8fLdTeOkaksjQXTGs0E5z53srRzHjnujhJWSAYjWgoC2G6AfZA2nvFJWWtMz1dpWCnlBXp7vrilW2Vz0EbODZTEB4ilrNSjWcT4MlezPpEsx5wRerwmPJm2aM33ruD7oe8f1reOadbo6Xhdf3EmY7MzikwkO879tISs0qrFyb88c1H9_IiSdHUJwMGECV_QU8X9SfwDu-Z1D</recordid><startdate>20100701</startdate><enddate>20100701</enddate><creator>Elmansouri, A.</creator><creator>Outzourhit, A.</creator><creator>Oueriagli, A.</creator><creator>Lachkar, A.</creator><creator>Hadik, N.</creator><creator>Achour, M.E.</creator><creator>Abouelaoualim, A.</creator><creator>Malaoui, A.</creator><creator>Berrada, K.</creator><creator>Ameziane, E.L.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100701</creationdate><title>Fabrication and characterization of Schottky diodes and thin films based on poly(o-toluidine) deposited by spincoating technique</title><author>Elmansouri, A. ; Outzourhit, A. ; Oueriagli, A. ; Lachkar, A. ; Hadik, N. ; Achour, M.E. ; Abouelaoualim, A. ; Malaoui, A. ; Berrada, K. ; Ameziane, E.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-3e25af087cf1c36b39951fa72b330ee24be2e458e683838c7f77b3ba6074b4323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Aluminum</topic><topic>Application fields</topic><topic>Applied sciences</topic><topic>Deposition</topic><topic>Devices</topic><topic>Diodes</topic><topic>Doped films</topic><topic>Electrical properties</topic><topic>Electronics</topic><topic>Energy gaps (solid state)</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>Mathematical analysis</topic><topic>Poly(o-toluidine)</topic><topic>Polymer industry, paints, wood</topic><topic>Schottky diode</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spin coating</topic><topic>Spincoating</topic><topic>Technology of polymers</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Elmansouri, A.</creatorcontrib><creatorcontrib>Outzourhit, A.</creatorcontrib><creatorcontrib>Oueriagli, A.</creatorcontrib><creatorcontrib>Lachkar, A.</creatorcontrib><creatorcontrib>Hadik, N.</creatorcontrib><creatorcontrib>Achour, M.E.</creatorcontrib><creatorcontrib>Abouelaoualim, A.</creatorcontrib><creatorcontrib>Malaoui, A.</creatorcontrib><creatorcontrib>Berrada, K.</creatorcontrib><creatorcontrib>Ameziane, E.L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Synthetic metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Elmansouri, A.</au><au>Outzourhit, A.</au><au>Oueriagli, A.</au><au>Lachkar, A.</au><au>Hadik, N.</au><au>Achour, M.E.</au><au>Abouelaoualim, A.</au><au>Malaoui, A.</au><au>Berrada, K.</au><au>Ameziane, E.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and characterization of Schottky diodes and thin films based on poly(o-toluidine) deposited by spincoating technique</atitle><jtitle>Synthetic metals</jtitle><date>2010-07-01</date><risdate>2010</risdate><volume>160</volume><issue>13</issue><spage>1487</spage><epage>1492</epage><pages>1487-1492</pages><issn>0379-6779</issn><eissn>1879-3290</eissn><coden>SYMEDZ</coden><abstract>Poly(o-toluidine) (POT) thin films were fabricated by spin coating on bare glass and indium–tin–oxide (ITO)-coated glass substrates, from a solution of poly(o-toluidine) in chloroform. The optical transmittance of the as-deposited and doped films was measured in the 250–1200
nm wavelength range. These measurements showed that the optical band gaps of the undoped and doped polymer films are on the order of 3.28 and 2.7
eV, respectively, and that doping increases absorption in the near infrared region. The FT-Raman measurement on spincoated POT film is comparable to that of polyaniline. The electrochemical properties of those thin films are presented using cyclic voltammetry. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The current–voltage characteristics of the devices indicate a Schottky diode-type behavior. The current–voltage characteristics can be fitted using the modified Shockley equation. The diode parameters were calculated from
I–
V characteristics and discussed. On the other hand, capacitance of these structures decreased with increasing frequency.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.synthmet.2010.05.008</doi><tpages>6</tpages></addata></record> |
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| subjects | Aluminum Application fields Applied sciences Deposition Devices Diodes Doped films Electrical properties Electronics Energy gaps (solid state) Exact sciences and technology Glass Mathematical analysis Poly(o-toluidine) Polymer industry, paints, wood Schottky diode Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spin coating Spincoating Technology of polymers Thin films |
| title | Fabrication and characterization of Schottky diodes and thin films based on poly(o-toluidine) deposited by spincoating technique |
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