Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

Conductive atomic force microscopy combined with a delamination technique is used to remove the top electrode of Fe‐doped SrTiO3 metal–insulator–metal structures and gain insight into the active switching interface. Both a filamentary and an area‐dependent switching process with opposite switching p...

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Veröffentlicht in:Advanced materials (Weinheim) 2010-11, Vol.22 (43), p.4819-4822
Hauptverfasser: Muenstermann, Ruth, Menke, Tobias, Dittmann, Regina, Waser, Rainer
Format: Artikel
Sprache:eng
Schlagworte:
Computer Storage Devices
Conductive AFM
Data Storage
Electric Impedance
Equipment Design
Equipment Failure Analysis
Iron - chemistry
Membranes, Artificial
Memristors
Oxides - chemistry
Resistive Switching
Signal Processing, Computer-Assisted - instrumentation
SrTiO3
Strontium - chemistry
Thin Films
Titanium - chemistry
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Zusammenfassung:Conductive atomic force microscopy combined with a delamination technique is used to remove the top electrode of Fe‐doped SrTiO3 metal–insulator–metal structures and gain insight into the active switching interface. Both a filamentary and an area‐dependent switching process with opposite switching polarities are found in the same sample.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201001872