Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. T...
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Veröffentlicht in: | Thin solid films 2010-05, Vol.518 (15), p.4399-4402 |
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creator | Sato, Taketomo Yoshizawa, Naoki Hashizume, Tamotsu |
description | Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface. |
doi_str_mv | 10.1016/j.tsf.2010.02.029 |
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Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2010.02.029</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Energy ; Exact sciences and technology ; Indium phosphide ; Indium phosphides ; Materials science ; Nanocomposites ; Nanomaterials ; Nanoscale materials and structures: fabrication and characterization ; Nanostructure ; Natural energy ; Other semiconductors ; Other topics in nanoscale materials and structures ; Photoelectrochemical solar cell ; Photovoltaic conversion ; Physics ; Porous structure ; Reflectance ; Reflectivity ; Solar cells. Photoelectrochemical cells ; Solar energy ; Specific materials ; Surface area ; Surface chemistry ; Surface reflectance ; Thin films</subject><ispartof>Thin solid films, 2010-05, Vol.518 (15), p.4399-4402</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c469t-f42bd8800e95a5e23bfc833ba798e9d37376dd4d513ac23760049512a76f07063</citedby><cites>FETCH-LOGICAL-c469t-f42bd8800e95a5e23bfc833ba798e9d37376dd4d513ac23760049512a76f07063</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609010002117$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22795507$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sato, Taketomo</creatorcontrib><creatorcontrib>Yoshizawa, Naoki</creatorcontrib><creatorcontrib>Hashizume, Tamotsu</creatorcontrib><title>Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells</title><title>Thin solid films</title><description>Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Indium phosphide</subject><subject>Indium phosphides</subject><subject>Materials science</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanostructure</subject><subject>Natural energy</subject><subject>Other semiconductors</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Photoelectrochemical solar cell</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Porous structure</subject><subject>Reflectance</subject><subject>Reflectivity</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Specific materials</subject><subject>Surface area</subject><subject>Surface chemistry</subject><subject>Surface reflectance</subject><subject>Thin films</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kEGLFDEQhYMoOK7-AG-5iKeerSTTnQ6eZHF1YUERPYdMusJmyHTaJK2uP8FfbQ2z7FEoKELee8n7GHstYCtADJeHbathK4HOIGnME7YRozad1Eo8ZRuAHXQDGHjOXtR6AAAhpdqwv1_RpfjHtZhnngN3M8ffreAR0z1P-RcvGBL65maPvK4lONp7V3HiZLiZv_All7xWPrs511ZW39aClYdcuFuWFP05umW-3OWW8RRWsr_DI10lXnNyhXtMqb5kz4JLFV897Av2_frDt6tP3e3njzdX7287vxtM68JO7qdxBEDTux6l2gc_KrV32oxoJqWVHqZpN_VCOS_pQNVNL6TTQwANg7pgb8-5S8k_VqzNHmM9_cDNSE0sOSQQNklKcVb6kmslEnYp8ejKvRVgT9jtwRJ2e8JuQdIY8rx5SHeVCoZC5GJ9NEqpTd-DJt27sw6p6s-IxVYfkShPsRAiO-X4n1f-AcRImrM</recordid><startdate>20100531</startdate><enddate>20100531</enddate><creator>Sato, Taketomo</creator><creator>Yoshizawa, Naoki</creator><creator>Hashizume, Tamotsu</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100531</creationdate><title>Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells</title><author>Sato, Taketomo ; Yoshizawa, Naoki ; Hashizume, Tamotsu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c469t-f42bd8800e95a5e23bfc833ba798e9d37376dd4d513ac23760049512a76f07063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Indium phosphide</topic><topic>Indium phosphides</topic><topic>Materials science</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanostructure</topic><topic>Natural energy</topic><topic>Other semiconductors</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Photoelectrochemical solar cell</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Porous structure</topic><topic>Reflectance</topic><topic>Reflectivity</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Specific materials</topic><topic>Surface area</topic><topic>Surface chemistry</topic><topic>Surface reflectance</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sato, Taketomo</creatorcontrib><creatorcontrib>Yoshizawa, Naoki</creatorcontrib><creatorcontrib>Hashizume, Tamotsu</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sato, Taketomo</au><au>Yoshizawa, Naoki</au><au>Hashizume, Tamotsu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells</atitle><jtitle>Thin solid films</jtitle><date>2010-05-31</date><risdate>2010</risdate><volume>518</volume><issue>15</issue><spage>4399</spage><epage>4402</epage><pages>4399-4402</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Extremely low reflectance was obtained from InP porous nanostructures in UV, visible, and near-infrared ranges. Porous samples were electrochemically prepared on which 130-nm-diameter nanopores were formed in a straight, vertical direction and were laterally separated by 50-nm-thick InP nanowalls. The reflectance strongly depended on the surface morphology. The lowest reflectance of 0.1% in the visible light range was obtained after the irregular top layer had been completely removed. Superior photoelectrochemical properties were obtained on the InP porous structures due to two unique features: the large surface area inside pores, and the large photon absorption enhanced on the low reflectance surface.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2010.02.029</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Applied sciences Cross-disciplinary physics: materials science rheology Energy Exact sciences and technology Indium phosphide Indium phosphides Materials science Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Natural energy Other semiconductors Other topics in nanoscale materials and structures Photoelectrochemical solar cell Photovoltaic conversion Physics Porous structure Reflectance Reflectivity Solar cells. Photoelectrochemical cells Solar energy Specific materials Surface area Surface chemistry Surface reflectance Thin films |
title | Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells |
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