Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator
We demonstrate an all-optical switch based on a waveguide-embedded 1D photonic crystal cavity fabricated in silicon-on-insulator technology. Light at the telecom wavelength is modulated at high-speed by control pulses in the near infrared, harnessing the plasma dispersion effect. The actual absorbed...
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| Veröffentlicht in: | Optics express 2010-10, Vol.18 (21), p.22485-22496 |
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| container_issue | 21 |
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| container_title | Optics express |
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| creator | Schönenberger, Sophie Stöferle, Thilo Moll, Nikolaj Mahrt, Rainer F Dahlem, Marcus S Wahlbrink, Thorsten Bolten, Jens Mollenhauer, Thomas Kurz, Heinrich Offrein, Bert J |
| description | We demonstrate an all-optical switch based on a waveguide-embedded 1D photonic crystal cavity fabricated in silicon-on-insulator technology. Light at the telecom wavelength is modulated at high-speed by control pulses in the near infrared, harnessing the plasma dispersion effect. The actual absorbed switching power required for a 3 dB modulation depth is measured to be as low as 6 fJ. While the switch-on time is on the order of a few picoseconds, the relaxation time is almost 500 ps and limited by the lifetime of the charge carriers. |
| doi_str_mv | 10.1364/OE.18.022485 |
| format | Article |
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| title | Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator |
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