Surface band-gap narrowing in quantized electron accumulation layers
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly al...
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| Veröffentlicht in: | Physical review letters 2010-06, Vol.104 (25), p.256803-256803, Article 256803 |
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| container_title | Physical review letters |
| container_volume | 104 |
| creator | King, P D C Veal, T D McConville, C F Zúñiga-Pérez, J Muñoz-Sanjosé, V Hopkinson, M Rienks, E D L Jensen, M Fuglsang Hofmann, Ph |
| description | An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering. |
| doi_str_mv | 10.1103/physrevlett.104.256803 |
| format | Article |
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| issn | 0031-9007 1079-7114 |
| language | eng |
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| source | American Physical Society Journals |
| title | Surface band-gap narrowing in quantized electron accumulation layers |
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