Measurement of optical two-photon gain in electrically pumped AlGaAs at room temperature

Measurement of optical two-photon gain in electrically pumped AlGaAs at room temperature

We demonstrate experimentally two-photon gain in semiconductor structures, shown previously only in dilute atomic systems. Two-photon gain is directly observed and characterized in electrically pumped room-temperature semiconductor devices, in good agreement with theory. The semiconductor structure...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review letters 2010-05, Vol.104 (20), p.207404-207404, Article 207404
Hauptverfasser: Nevet, Amir, Hayat, Alex, Orenstein, Meir
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 207404
container_issue 20
container_start_page 207404
container_title Physical review letters
container_volume 104
creator Nevet, Amir
Hayat, Alex
Orenstein, Meir
description We demonstrate experimentally two-photon gain in semiconductor structures, shown previously only in dilute atomic systems. Two-photon gain is directly observed and characterized in electrically pumped room-temperature semiconductor devices, in good agreement with theory. The semiconductor structure was designed to enhance the two-photon interaction and reduce parasitic effects. The nonlinear two-photon amplification is studied directly by examining the current dependence of the optical intensity growth, and indirectly by monitoring the reduction in one-photon emission due to two-photon transitions above transparency.
doi_str_mv 10.1103/physrevlett.104.207404
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_755403568</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>755403568</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-fa755aa3583a45b85b484bee8a25ec9c80533c22c38bb3c7c130b32a767812113</originalsourceid><addsrcrecordid>eNo9kEFLAzEQhYMotlb_QsnN09bJJtmkxyJahYoiCt6WbDq1ld3NmmQr_femtAoDA2_eewMfIWMGE8aA33TrXfC4rTHGCQMxyUEJECdkyEBNM8WYOCVDAM6yKYAakIsQvgCA5YU-J4McdKGgkEPy8YQm9B4bbCN1K-q6uLGmpvHHZd3aRdfST7NpaRqs0Ua_v9Y72vVNh0s6q-dmFqiJ1DvX0IhJ9SamwktytjJ1wKvjHpH3-7u324ds8Tx_vJ0tMstVEbOVUVIaw6XmRshKy0poUSFqk0u0U6tBcm7z3HJdVdwqyzhUPDeqUJrljPERuT70dt599xhi2WyCxbo2Lbo-lKleAJeFTs7i4LTehQRvVXZ-0xi_KxmUe6jlS4L6ittFgpo0UR6gpuD4-KKvGlz-x_4o8l9yfna6</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>755403568</pqid></control><display><type>article</type><title>Measurement of optical two-photon gain in electrically pumped AlGaAs at room temperature</title><source>American Physical Society Journals</source><creator>Nevet, Amir ; Hayat, Alex ; Orenstein, Meir</creator><creatorcontrib>Nevet, Amir ; Hayat, Alex ; Orenstein, Meir</creatorcontrib><description>We demonstrate experimentally two-photon gain in semiconductor structures, shown previously only in dilute atomic systems. Two-photon gain is directly observed and characterized in electrically pumped room-temperature semiconductor devices, in good agreement with theory. The semiconductor structure was designed to enhance the two-photon interaction and reduce parasitic effects. The nonlinear two-photon amplification is studied directly by examining the current dependence of the optical intensity growth, and indirectly by monitoring the reduction in one-photon emission due to two-photon transitions above transparency.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/physrevlett.104.207404</identifier><identifier>PMID: 20867065</identifier><language>eng</language><publisher>United States</publisher><ispartof>Physical review letters, 2010-05, Vol.104 (20), p.207404-207404, Article 207404</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-fa755aa3583a45b85b484bee8a25ec9c80533c22c38bb3c7c130b32a767812113</citedby><cites>FETCH-LOGICAL-c376t-fa755aa3583a45b85b484bee8a25ec9c80533c22c38bb3c7c130b32a767812113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/20867065$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Nevet, Amir</creatorcontrib><creatorcontrib>Hayat, Alex</creatorcontrib><creatorcontrib>Orenstein, Meir</creatorcontrib><title>Measurement of optical two-photon gain in electrically pumped AlGaAs at room temperature</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>We demonstrate experimentally two-photon gain in semiconductor structures, shown previously only in dilute atomic systems. Two-photon gain is directly observed and characterized in electrically pumped room-temperature semiconductor devices, in good agreement with theory. The semiconductor structure was designed to enhance the two-photon interaction and reduce parasitic effects. The nonlinear two-photon amplification is studied directly by examining the current dependence of the optical intensity growth, and indirectly by monitoring the reduction in one-photon emission due to two-photon transitions above transparency.</description><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLAzEQhYMotlb_QsnN09bJJtmkxyJahYoiCt6WbDq1ld3NmmQr_femtAoDA2_eewMfIWMGE8aA33TrXfC4rTHGCQMxyUEJECdkyEBNM8WYOCVDAM6yKYAakIsQvgCA5YU-J4McdKGgkEPy8YQm9B4bbCN1K-q6uLGmpvHHZd3aRdfST7NpaRqs0Ua_v9Y72vVNh0s6q-dmFqiJ1DvX0IhJ9SamwktytjJ1wKvjHpH3-7u324ds8Tx_vJ0tMstVEbOVUVIaw6XmRshKy0poUSFqk0u0U6tBcm7z3HJdVdwqyzhUPDeqUJrljPERuT70dt599xhi2WyCxbo2Lbo-lKleAJeFTs7i4LTehQRvVXZ-0xi_KxmUe6jlS4L6ittFgpo0UR6gpuD4-KKvGlz-x_4o8l9yfna6</recordid><startdate>20100521</startdate><enddate>20100521</enddate><creator>Nevet, Amir</creator><creator>Hayat, Alex</creator><creator>Orenstein, Meir</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20100521</creationdate><title>Measurement of optical two-photon gain in electrically pumped AlGaAs at room temperature</title><author>Nevet, Amir ; Hayat, Alex ; Orenstein, Meir</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-fa755aa3583a45b85b484bee8a25ec9c80533c22c38bb3c7c130b32a767812113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nevet, Amir</creatorcontrib><creatorcontrib>Hayat, Alex</creatorcontrib><creatorcontrib>Orenstein, Meir</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nevet, Amir</au><au>Hayat, Alex</au><au>Orenstein, Meir</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of optical two-photon gain in electrically pumped AlGaAs at room temperature</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2010-05-21</date><risdate>2010</risdate><volume>104</volume><issue>20</issue><spage>207404</spage><epage>207404</epage><pages>207404-207404</pages><artnum>207404</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>We demonstrate experimentally two-photon gain in semiconductor structures, shown previously only in dilute atomic systems. Two-photon gain is directly observed and characterized in electrically pumped room-temperature semiconductor devices, in good agreement with theory. The semiconductor structure was designed to enhance the two-photon interaction and reduce parasitic effects. The nonlinear two-photon amplification is studied directly by examining the current dependence of the optical intensity growth, and indirectly by monitoring the reduction in one-photon emission due to two-photon transitions above transparency.</abstract><cop>United States</cop><pmid>20867065</pmid><doi>10.1103/physrevlett.104.207404</doi><tpages>1</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0031-9007
ispartof Physical review letters, 2010-05, Vol.104 (20), p.207404-207404, Article 207404
issn 0031-9007
1079-7114
language eng
recordid cdi_proquest_miscellaneous_755403568
source American Physical Society Journals
title Measurement of optical two-photon gain in electrically pumped AlGaAs at room temperature
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T13%3A19%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Measurement%20of%20optical%20two-photon%20gain%20in%20electrically%20pumped%20AlGaAs%20at%20room%20temperature&rft.jtitle=Physical%20review%20letters&rft.au=Nevet,%20Amir&rft.date=2010-05-21&rft.volume=104&rft.issue=20&rft.spage=207404&rft.epage=207404&rft.pages=207404-207404&rft.artnum=207404&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/physrevlett.104.207404&rft_dat=%3Cproquest_cross%3E755403568%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=755403568&rft_id=info:pmid/20867065&rfr_iscdi=true