Photoluminescence and resonant Raman scattering in N-doped ZnO thin films
A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor–acceptor-pair transition was observed. An enh...
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| Veröffentlicht in: | Optics communications 2010-07, Vol.283 (13), p.2695-2699 |
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| container_issue | 13 |
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| container_title | Optics communications |
| container_volume | 283 |
| creator | Zhu, Xiaming Wu, Hui-Zhen Qiu, Dong-Jiang Yuan, Zijian Jin, Guofen Kong, Jinfang Shen, Wenzhong |
| description | A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor–acceptor-pair transition was observed. An enhancement of resonant Raman scattering processes as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed in the Raman spectra. Also, the nature of the 1LO phonon underwent a transformation from a pure A
1(LO) mode to a quasimode with mixed A
1 and E
1 symmetry. The underlying mechanisms accounting for the influences of N doping on the optical properties of ZnO were related to the incorporation of extrinsic defects in the crystal lattice. |
| doi_str_mv | 10.1016/j.optcom.2010.03.006 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_753754683</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0030401810002270</els_id><sourcerecordid>753754683</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-a05e01009b5bdb6d93e6d8753eed88e7dd20b5b2b84e88bcf9d5aaa9885b5df43</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouK7-Aw-9iKeuk6Yf6UWQxS9YVEQvXkKaTDVLm9QkK_jvzbLi0dPAO-_MvPMQckphQYHWF-uFm6Jy46KAJAFbANR7ZEZ5w3JgFPbJDIBBXgLlh-QohDUA0JLxGbl_-nDRDZvRWAwKrcJMWp15DM5KG7NnOUqbBSVjRG_se2Zs9pBrN6HO3uxjFj-S0JthDMfkoJdDwJPfOievN9cvy7t89Xh7v7xa5YrVPOYSKkwpoe2qTne1bhnWmjcVQ9ScY6N1AalVdLxEzjvVt7qSUracV12l-5LNyflu7-Td5wZDFKNJyYdBWnSbINKqpiprzpKz3DmVdyF47MXkzSj9t6AgtuDEWuzAiS04AUwkcGns7PeATH8PvZdWmfA3WxQNpxVvk-9y58P07ZdBL4IyW4LaeFRRaGf-P_QD4YiGdg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>753754683</pqid></control><display><type>article</type><title>Photoluminescence and resonant Raman scattering in N-doped ZnO thin films</title><source>Access via ScienceDirect (Elsevier)</source><creator>Zhu, Xiaming ; Wu, Hui-Zhen ; Qiu, Dong-Jiang ; Yuan, Zijian ; Jin, Guofen ; Kong, Jinfang ; Shen, Wenzhong</creator><creatorcontrib>Zhu, Xiaming ; Wu, Hui-Zhen ; Qiu, Dong-Jiang ; Yuan, Zijian ; Jin, Guofen ; Kong, Jinfang ; Shen, Wenzhong</creatorcontrib><description>A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor–acceptor-pair transition was observed. An enhancement of resonant Raman scattering processes as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed in the Raman spectra. Also, the nature of the 1LO phonon underwent a transformation from a pure A
1(LO) mode to a quasimode with mixed A
1 and E
1 symmetry. The underlying mechanisms accounting for the influences of N doping on the optical properties of ZnO were related to the incorporation of extrinsic defects in the crystal lattice.</description><identifier>ISSN: 0030-4018</identifier><identifier>EISSN: 1873-0310</identifier><identifier>DOI: 10.1016/j.optcom.2010.03.006</identifier><identifier>CODEN: OPCOB8</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Accounting ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Ii-vi semiconductors ; N doping ; Optical materials ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optics ; Other nonlinear optical materials; photorefractive and semiconductor materials ; Phonons ; Photoluminescence ; Physics ; Raman scattering ; Resonant Raman scattering ; Spectra ; Thin films ; Transformations ; Zinc oxide ; ZnO</subject><ispartof>Optics communications, 2010-07, Vol.283 (13), p.2695-2699</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-a05e01009b5bdb6d93e6d8753eed88e7dd20b5b2b84e88bcf9d5aaa9885b5df43</citedby><cites>FETCH-LOGICAL-c368t-a05e01009b5bdb6d93e6d8753eed88e7dd20b5b2b84e88bcf9d5aaa9885b5df43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.optcom.2010.03.006$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22781589$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhu, Xiaming</creatorcontrib><creatorcontrib>Wu, Hui-Zhen</creatorcontrib><creatorcontrib>Qiu, Dong-Jiang</creatorcontrib><creatorcontrib>Yuan, Zijian</creatorcontrib><creatorcontrib>Jin, Guofen</creatorcontrib><creatorcontrib>Kong, Jinfang</creatorcontrib><creatorcontrib>Shen, Wenzhong</creatorcontrib><title>Photoluminescence and resonant Raman scattering in N-doped ZnO thin films</title><title>Optics communications</title><description>A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor–acceptor-pair transition was observed. An enhancement of resonant Raman scattering processes as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed in the Raman spectra. Also, the nature of the 1LO phonon underwent a transformation from a pure A
1(LO) mode to a quasimode with mixed A
1 and E
1 symmetry. The underlying mechanisms accounting for the influences of N doping on the optical properties of ZnO were related to the incorporation of extrinsic defects in the crystal lattice.</description><subject>Accounting</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Ii-vi semiconductors</subject><subject>N doping</subject><subject>Optical materials</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optics</subject><subject>Other nonlinear optical materials; photorefractive and semiconductor materials</subject><subject>Phonons</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Raman scattering</subject><subject>Resonant Raman scattering</subject><subject>Spectra</subject><subject>Thin films</subject><subject>Transformations</subject><subject>Zinc oxide</subject><subject>ZnO</subject><issn>0030-4018</issn><issn>1873-0310</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-Aw-9iKeuk6Yf6UWQxS9YVEQvXkKaTDVLm9QkK_jvzbLi0dPAO-_MvPMQckphQYHWF-uFm6Jy46KAJAFbANR7ZEZ5w3JgFPbJDIBBXgLlh-QohDUA0JLxGbl_-nDRDZvRWAwKrcJMWp15DM5KG7NnOUqbBSVjRG_se2Zs9pBrN6HO3uxjFj-S0JthDMfkoJdDwJPfOievN9cvy7t89Xh7v7xa5YrVPOYSKkwpoe2qTne1bhnWmjcVQ9ScY6N1AalVdLxEzjvVt7qSUracV12l-5LNyflu7-Td5wZDFKNJyYdBWnSbINKqpiprzpKz3DmVdyF47MXkzSj9t6AgtuDEWuzAiS04AUwkcGns7PeATH8PvZdWmfA3WxQNpxVvk-9y58P07ZdBL4IyW4LaeFRRaGf-P_QD4YiGdg</recordid><startdate>20100701</startdate><enddate>20100701</enddate><creator>Zhu, Xiaming</creator><creator>Wu, Hui-Zhen</creator><creator>Qiu, Dong-Jiang</creator><creator>Yuan, Zijian</creator><creator>Jin, Guofen</creator><creator>Kong, Jinfang</creator><creator>Shen, Wenzhong</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20100701</creationdate><title>Photoluminescence and resonant Raman scattering in N-doped ZnO thin films</title><author>Zhu, Xiaming ; Wu, Hui-Zhen ; Qiu, Dong-Jiang ; Yuan, Zijian ; Jin, Guofen ; Kong, Jinfang ; Shen, Wenzhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-a05e01009b5bdb6d93e6d8753eed88e7dd20b5b2b84e88bcf9d5aaa9885b5df43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Accounting</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Ii-vi semiconductors</topic><topic>N doping</topic><topic>Optical materials</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optics</topic><topic>Other nonlinear optical materials; photorefractive and semiconductor materials</topic><topic>Phonons</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Raman scattering</topic><topic>Resonant Raman scattering</topic><topic>Spectra</topic><topic>Thin films</topic><topic>Transformations</topic><topic>Zinc oxide</topic><topic>ZnO</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Xiaming</creatorcontrib><creatorcontrib>Wu, Hui-Zhen</creatorcontrib><creatorcontrib>Qiu, Dong-Jiang</creatorcontrib><creatorcontrib>Yuan, Zijian</creatorcontrib><creatorcontrib>Jin, Guofen</creatorcontrib><creatorcontrib>Kong, Jinfang</creatorcontrib><creatorcontrib>Shen, Wenzhong</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optics communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Xiaming</au><au>Wu, Hui-Zhen</au><au>Qiu, Dong-Jiang</au><au>Yuan, Zijian</au><au>Jin, Guofen</au><au>Kong, Jinfang</au><au>Shen, Wenzhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence and resonant Raman scattering in N-doped ZnO thin films</atitle><jtitle>Optics communications</jtitle><date>2010-07-01</date><risdate>2010</risdate><volume>283</volume><issue>13</issue><spage>2695</spage><epage>2699</epage><pages>2695-2699</pages><issn>0030-4018</issn><eissn>1873-0310</eissn><coden>OPCOB8</coden><abstract>A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor–acceptor-pair transition was observed. An enhancement of resonant Raman scattering processes as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed in the Raman spectra. Also, the nature of the 1LO phonon underwent a transformation from a pure A
1(LO) mode to a quasimode with mixed A
1 and E
1 symmetry. The underlying mechanisms accounting for the influences of N doping on the optical properties of ZnO were related to the incorporation of extrinsic defects in the crystal lattice.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.optcom.2010.03.006</doi><tpages>5</tpages></addata></record> |
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| ispartof | Optics communications, 2010-07, Vol.283 (13), p.2695-2699 |
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| subjects | Accounting Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Fundamental areas of phenomenology (including applications) Ii-vi semiconductors N doping Optical materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optics Other nonlinear optical materials photorefractive and semiconductor materials Phonons Photoluminescence Physics Raman scattering Resonant Raman scattering Spectra Thin films Transformations Zinc oxide ZnO |
| title | Photoluminescence and resonant Raman scattering in N-doped ZnO thin films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T17%3A58%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoluminescence%20and%20resonant%20Raman%20scattering%20in%20N-doped%20ZnO%20thin%20films&rft.jtitle=Optics%20communications&rft.au=Zhu,%20Xiaming&rft.date=2010-07-01&rft.volume=283&rft.issue=13&rft.spage=2695&rft.epage=2699&rft.pages=2695-2699&rft.issn=0030-4018&rft.eissn=1873-0310&rft.coden=OPCOB8&rft_id=info:doi/10.1016/j.optcom.2010.03.006&rft_dat=%3Cproquest_cross%3E753754683%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=753754683&rft_id=info:pmid/&rft_els_id=S0030401810002270&rfr_iscdi=true |