Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry

The oxygen distribution in Ni 2Si and NiSi films formed during a two-step silicidation process was analyzed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS mass spectra revealed that both silicon and nickel reacted with oxygen at the Ni 2Si surface. In addition, silicon nitrid...

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Veröffentlicht in:	Micron (Oxford, England : 1993) England : 1993), 2010-07, Vol.41 (5), p.412-415
Hauptverfasser:	Kobayashi, Kiyoteru, Watanabe, Hiroaki, Maekawa, Kazuyoshi, Kashihara, Keiichiro, Yamaguchi, Tadashi, Asai, Koyu, Hirose, Yukinori
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Capping Leakage current LSI MOSFETs Nickel silicide NiSi Oxygen distribution Secondary ion mass spectrometry Silicon Time-of-flight secondary ion mass spectrometry Titanium nitride TOF-SIMS
Online-Zugang:	Volltext
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