Memory characteristics of Al sub(2)O sub(3)/La sub(2)O sub(3)/Al sub(2)O sub(3) multi-layer films with various blocking and tunnel oxide thicknesses

In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al sub(2)O sub(3)/5 nm La sub(2)O sub(3)/5 nm Al sub(2)O sub(3) and 15 nm Al sub(2)O sub(3)/5 nm La sub(2)O sub(3)/5, 7....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science in semiconductor processing 2010-02, Vol.13 (1), p.9-12
Hauptverfasser:	Kim, Hyo June, Cha, Seung Yong, Choi, Doo Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Data storage Memory devices Multilayers Oxide coatings Oxides Semiconductors Tunnels (transportation)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!