Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)
The high dislocation density (2×10 7/cm 2 for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10 6/cm...
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| Veröffentlicht in: | Journal of crystal growth 2010-05, Vol.312 (10), p.1721-1725 |
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| container_title | Journal of crystal growth |
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| creator | Badano, G. Robin, I.C. Amstatt, B. Gemain, F. Baudry, X. |
| description | The high dislocation density (2×10
7/cm
2 for a thickness of 7
μm) in CdTe(2
1
1)B on Ge(2
1
1) has become a roadblock for the technological exploitation of this material. We present a systematic study of
in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10
6/cm
2 was achieved by optimizing the growth conditions and annealing the samples
in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements. |
| doi_str_mv | 10.1016/j.jcrysgro.2010.02.011 |
| format | Article |
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7/cm
2 for a thickness of 7
μm) in CdTe(2
1
1)B on Ge(2
1
1) has become a roadblock for the technological exploitation of this material. We present a systematic study of
in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10
6/cm
2 was achieved by optimizing the growth conditions and annealing the samples
in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.02.011</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Defects ; A1. Substrates ; A3. Molecular beam epitaxy ; Annealing ; B1. Cadmium compounds ; B2. Semiconducting II–VI materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Density ; Diffraction ; Dislocation density ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular beams ; Molecular, atomic, ion, and chemical beam epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optimization ; Photoluminescence ; Physics ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; X-rays</subject><ispartof>Journal of crystal growth, 2010-05, Vol.312 (10), p.1721-1725</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-4a57fd2fc502241cb81a8fd9669d65c081cd6c715eb03f31c1540304f2dc6f4d3</citedby><cites>FETCH-LOGICAL-c374t-4a57fd2fc502241cb81a8fd9669d65c081cd6c715eb03f31c1540304f2dc6f4d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024810000850$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22636955$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Badano, G.</creatorcontrib><creatorcontrib>Robin, I.C.</creatorcontrib><creatorcontrib>Amstatt, B.</creatorcontrib><creatorcontrib>Gemain, F.</creatorcontrib><creatorcontrib>Baudry, X.</creatorcontrib><title>Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)</title><title>Journal of crystal growth</title><description>The high dislocation density (2×10
7/cm
2 for a thickness of 7
μm) in CdTe(2
1
1)B on Ge(2
1
1) has become a roadblock for the technological exploitation of this material. We present a systematic study of
in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10
6/cm
2 was achieved by optimizing the growth conditions and annealing the samples
in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements.</description><subject>A1. Defects</subject><subject>A1. Substrates</subject><subject>A3. Molecular beam epitaxy</subject><subject>Annealing</subject><subject>B1. Cadmium compounds</subject><subject>B2. Semiconducting II–VI materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Density</subject><subject>Diffraction</subject><subject>Dislocation density</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular beams</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optimization</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>X-rays</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFUMFOGzEQtSqQGqC_gHypSg8bxt61d3MrRIVWQkJC9MLFcsbj1tFmndob1Px9HUK4cpnRPL03b-Yxdi5gKkDoy-V0iWmbf6c4lVBAkFMQ4gObiK6tKwUgj9ikVFmBbLqP7CTnJUBRCpiwpwdyGxxDHHj0fPxD3IXcR7QvkKMhh3HLw8BXsSfc9DbxBdkVp3UY7b9gez53j3QhueDi6zUvmtvDdMaOve0zfXrtp-zXzffH-Y_q7v725_zqrsK6bcaqsar1TnpU5cRG4KITtvNupvXMaYXQCXQaW6FoAbWvBQrVQA2Nlw61b1x9yr7s965T_LuhPJpVyEh9bweKm2xaVXyUlLow9Z6JKeacyJt1CiubtkaA2WVpluaQpdllaUCakmURfn61sBlt75MdMOQ39W63nilVeN_2PCr_PgdKJmOgAcmFRDgaF8N7Vv8BLh6K-w</recordid><startdate>20100501</startdate><enddate>20100501</enddate><creator>Badano, G.</creator><creator>Robin, I.C.</creator><creator>Amstatt, B.</creator><creator>Gemain, F.</creator><creator>Baudry, X.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100501</creationdate><title>Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)</title><author>Badano, G. ; Robin, I.C. ; Amstatt, B. ; Gemain, F. ; Baudry, X.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-4a57fd2fc502241cb81a8fd9669d65c081cd6c715eb03f31c1540304f2dc6f4d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>A1. Defects</topic><topic>A1. Substrates</topic><topic>A3. Molecular beam epitaxy</topic><topic>Annealing</topic><topic>B1. Cadmium compounds</topic><topic>B2. Semiconducting II–VI materials</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Density</topic><topic>Diffraction</topic><topic>Dislocation density</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular beams</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optimization</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Badano, G.</creatorcontrib><creatorcontrib>Robin, I.C.</creatorcontrib><creatorcontrib>Amstatt, B.</creatorcontrib><creatorcontrib>Gemain, F.</creatorcontrib><creatorcontrib>Baudry, X.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Badano, G.</au><au>Robin, I.C.</au><au>Amstatt, B.</au><au>Gemain, F.</au><au>Baudry, X.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)</atitle><jtitle>Journal of crystal growth</jtitle><date>2010-05-01</date><risdate>2010</risdate><volume>312</volume><issue>10</issue><spage>1721</spage><epage>1725</epage><pages>1721-1725</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The high dislocation density (2×10
7/cm
2 for a thickness of 7
μm) in CdTe(2
1
1)B on Ge(2
1
1) has become a roadblock for the technological exploitation of this material. We present a systematic study of
in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10
6/cm
2 was achieved by optimizing the growth conditions and annealing the samples
in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.02.011</doi><tpages>5</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2010-05, Vol.312 (10), p.1721-1725 |
| issn | 0022-0248 1873-5002 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. Defects A1. Substrates A3. Molecular beam epitaxy Annealing B1. Cadmium compounds B2. Semiconducting II–VI materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Crystal growth Density Diffraction Dislocation density Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular beams Molecular, atomic, ion, and chemical beam epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optimization Photoluminescence Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation X-rays |
| title | Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1) |
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