Fabrication of vertically positioned silicon on insulator photo-activated modulator

In this paper we present the fabrication process and the experimental proof of principle of a vertical Silicon On Insulator Photo Activated Modulator (vertical SOI-PAM). In this device the information is electronic while the modulation command is photonic. Since photon illumination generates free ch...

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Veröffentlicht in:Photonics and nanostructures 2009-12, Vol.7 (4), p.190-197
Hauptverfasser: Abraham, Doron, Zalevsky, Zeev, Chelly, Avraham, Shappir, Joseph
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container_title Photonics and nanostructures
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creator Abraham, Doron
Zalevsky, Zeev
Chelly, Avraham
Shappir, Joseph
description In this paper we present the fabrication process and the experimental proof of principle of a vertical Silicon On Insulator Photo Activated Modulator (vertical SOI-PAM). In this device the information is electronic while the modulation command is photonic. Since photon illumination generates free charges and current, the information channel should be isolated by combination of metal and oxide layers in order to avoid cross-talk. However photo-generated charges are capable of closing the channel by inducing changes in the space charge layers on both sides of the oxide. The device is a vertical structure of n-type silicon resistor on oxide insulator above a p-type silicon substrate. The photonic modulation command is applied by top illumination of a specially etched V-groove in the p-type substrate in the vicinity of the resistor.
doi_str_mv 10.1016/j.photonics.2009.03.001
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_753739322</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S1569441009000182</els_id><sourcerecordid>753739322</sourcerecordid><originalsourceid>FETCH-LOGICAL-c377t-4264dbec2a501de9275ec82af651c04ebf89a7ddcda41ced8fe9f4311af3b27a3</originalsourceid><addsrcrecordid>eNqFkMtOwzAQRS0EEqXwDWSDWCX4kcTNsqooIFViAawtxx4LV2kcbLdS_x6HVN2y8uvM3PFB6J7ggmBSP22L4dtF11sVCopxU2BWYEwu0IxUdZOXJW0uz3uCr9FNCFuMGatJPUMfa9l6q2S0rs-cyQ7gYzp23TEbXLDjNegs2M6qEegz24d9J6Pz2V9sLlW0BxkTtHN6erlFV0Z2Ae5O6xx9rZ8_V6_55v3lbbXc5IpxHvOS1qVuQVFZYaKhobwCtaDS1BVRuITWLBrJtVZalkSBXhhoTMkIkYa1lEs2R49T38G7nz2EKHY2KOg62YPbB8ErxlnDKE0kn0jlXQgejBi83Ul_FASL0aLYirNFMVoUmIlkMVU-nDJkSFqMl72y4VxOaZq64Thxy4mD9OGDBS-CstCnsa0HFYV29t-sXxybj9g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>753739322</pqid></control><display><type>article</type><title>Fabrication of vertically positioned silicon on insulator photo-activated modulator</title><source>Elsevier ScienceDirect Journals</source><creator>Abraham, Doron ; Zalevsky, Zeev ; Chelly, Avraham ; Shappir, Joseph</creator><creatorcontrib>Abraham, Doron ; Zalevsky, Zeev ; Chelly, Avraham ; Shappir, Joseph</creatorcontrib><description>In this paper we present the fabrication process and the experimental proof of principle of a vertical Silicon On Insulator Photo Activated Modulator (vertical SOI-PAM). In this device the information is electronic while the modulation command is photonic. Since photon illumination generates free charges and current, the information channel should be isolated by combination of metal and oxide layers in order to avoid cross-talk. However photo-generated charges are capable of closing the channel by inducing changes in the space charge layers on both sides of the oxide. The device is a vertical structure of n-type silicon resistor on oxide insulator above a p-type silicon substrate. The photonic modulation command is applied by top illumination of a specially etched V-groove in the p-type substrate in the vicinity of the resistor.</description><identifier>ISSN: 1569-4410</identifier><identifier>EISSN: 1569-4429</identifier><identifier>DOI: 10.1016/j.photonics.2009.03.001</identifier><language>eng</language><publisher>Tokyo: Elsevier B.V</publisher><subject>Channels ; Devices ; Electro-optical devices ; Exact sciences and technology ; Fabrication ; Fundamental areas of phenomenology (including applications) ; Illumination ; Insulators ; Modulation ; Modulator ; Nanostructure ; Optical elements, devices, and systems ; Optical processors, correlators, and modulators ; Optics ; Oxides ; Photonic integrated circuits ; Photonics ; Physics ; Silicon photonics</subject><ispartof>Photonics and nanostructures, 2009-12, Vol.7 (4), p.190-197</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-4264dbec2a501de9275ec82af651c04ebf89a7ddcda41ced8fe9f4311af3b27a3</citedby><cites>FETCH-LOGICAL-c377t-4264dbec2a501de9275ec82af651c04ebf89a7ddcda41ced8fe9f4311af3b27a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S1569441009000182$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=22275970$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Abraham, Doron</creatorcontrib><creatorcontrib>Zalevsky, Zeev</creatorcontrib><creatorcontrib>Chelly, Avraham</creatorcontrib><creatorcontrib>Shappir, Joseph</creatorcontrib><title>Fabrication of vertically positioned silicon on insulator photo-activated modulator</title><title>Photonics and nanostructures</title><description>In this paper we present the fabrication process and the experimental proof of principle of a vertical Silicon On Insulator Photo Activated Modulator (vertical SOI-PAM). In this device the information is electronic while the modulation command is photonic. Since photon illumination generates free charges and current, the information channel should be isolated by combination of metal and oxide layers in order to avoid cross-talk. However photo-generated charges are capable of closing the channel by inducing changes in the space charge layers on both sides of the oxide. The device is a vertical structure of n-type silicon resistor on oxide insulator above a p-type silicon substrate. The photonic modulation command is applied by top illumination of a specially etched V-groove in the p-type substrate in the vicinity of the resistor.</description><subject>Channels</subject><subject>Devices</subject><subject>Electro-optical devices</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Illumination</subject><subject>Insulators</subject><subject>Modulation</subject><subject>Modulator</subject><subject>Nanostructure</subject><subject>Optical elements, devices, and systems</subject><subject>Optical processors, correlators, and modulators</subject><subject>Optics</subject><subject>Oxides</subject><subject>Photonic integrated circuits</subject><subject>Photonics</subject><subject>Physics</subject><subject>Silicon photonics</subject><issn>1569-4410</issn><issn>1569-4429</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwDWSDWCX4kcTNsqooIFViAawtxx4LV2kcbLdS_x6HVN2y8uvM3PFB6J7ggmBSP22L4dtF11sVCopxU2BWYEwu0IxUdZOXJW0uz3uCr9FNCFuMGatJPUMfa9l6q2S0rs-cyQ7gYzp23TEbXLDjNegs2M6qEegz24d9J6Pz2V9sLlW0BxkTtHN6erlFV0Z2Ae5O6xx9rZ8_V6_55v3lbbXc5IpxHvOS1qVuQVFZYaKhobwCtaDS1BVRuITWLBrJtVZalkSBXhhoTMkIkYa1lEs2R49T38G7nz2EKHY2KOg62YPbB8ErxlnDKE0kn0jlXQgejBi83Ul_FASL0aLYirNFMVoUmIlkMVU-nDJkSFqMl72y4VxOaZq64Thxy4mD9OGDBS-CstCnsa0HFYV29t-sXxybj9g</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Abraham, Doron</creator><creator>Zalevsky, Zeev</creator><creator>Chelly, Avraham</creator><creator>Shappir, Joseph</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20091201</creationdate><title>Fabrication of vertically positioned silicon on insulator photo-activated modulator</title><author>Abraham, Doron ; Zalevsky, Zeev ; Chelly, Avraham ; Shappir, Joseph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-4264dbec2a501de9275ec82af651c04ebf89a7ddcda41ced8fe9f4311af3b27a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Channels</topic><topic>Devices</topic><topic>Electro-optical devices</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Illumination</topic><topic>Insulators</topic><topic>Modulation</topic><topic>Modulator</topic><topic>Nanostructure</topic><topic>Optical elements, devices, and systems</topic><topic>Optical processors, correlators, and modulators</topic><topic>Optics</topic><topic>Oxides</topic><topic>Photonic integrated circuits</topic><topic>Photonics</topic><topic>Physics</topic><topic>Silicon photonics</topic><toplevel>online_resources</toplevel><creatorcontrib>Abraham, Doron</creatorcontrib><creatorcontrib>Zalevsky, Zeev</creatorcontrib><creatorcontrib>Chelly, Avraham</creatorcontrib><creatorcontrib>Shappir, Joseph</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Photonics and nanostructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abraham, Doron</au><au>Zalevsky, Zeev</au><au>Chelly, Avraham</au><au>Shappir, Joseph</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of vertically positioned silicon on insulator photo-activated modulator</atitle><jtitle>Photonics and nanostructures</jtitle><date>2009-12-01</date><risdate>2009</risdate><volume>7</volume><issue>4</issue><spage>190</spage><epage>197</epage><pages>190-197</pages><issn>1569-4410</issn><eissn>1569-4429</eissn><abstract>In this paper we present the fabrication process and the experimental proof of principle of a vertical Silicon On Insulator Photo Activated Modulator (vertical SOI-PAM). In this device the information is electronic while the modulation command is photonic. Since photon illumination generates free charges and current, the information channel should be isolated by combination of metal and oxide layers in order to avoid cross-talk. However photo-generated charges are capable of closing the channel by inducing changes in the space charge layers on both sides of the oxide. The device is a vertical structure of n-type silicon resistor on oxide insulator above a p-type silicon substrate. The photonic modulation command is applied by top illumination of a specially etched V-groove in the p-type substrate in the vicinity of the resistor.</abstract><cop>Tokyo</cop><pub>Elsevier B.V</pub><doi>10.1016/j.photonics.2009.03.001</doi><tpages>8</tpages></addata></record>
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subjects Channels
Devices
Electro-optical devices
Exact sciences and technology
Fabrication
Fundamental areas of phenomenology (including applications)
Illumination
Insulators
Modulation
Modulator
Nanostructure
Optical elements, devices, and systems
Optical processors, correlators, and modulators
Optics
Oxides
Photonic integrated circuits
Photonics
Physics
Silicon photonics
title Fabrication of vertically positioned silicon on insulator photo-activated modulator
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T01%3A59%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20of%20vertically%20positioned%20silicon%20on%20insulator%20photo-activated%20modulator&rft.jtitle=Photonics%20and%20nanostructures&rft.au=Abraham,%20Doron&rft.date=2009-12-01&rft.volume=7&rft.issue=4&rft.spage=190&rft.epage=197&rft.pages=190-197&rft.issn=1569-4410&rft.eissn=1569-4429&rft_id=info:doi/10.1016/j.photonics.2009.03.001&rft_dat=%3Cproquest_cross%3E753739322%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=753739322&rft_id=info:pmid/&rft_els_id=S1569441009000182&rfr_iscdi=true