Equivalent Left-Handed/Right-Handed Metamaterial's Circuit Model for the Massless Dirac Fermions With Negative Refraction
A new circuit model for the graphene p-n junction (PNJ) is introduced, which is based on the model proposed by Cheianov , using equivalent quantum circuit elements. Our model is similar to the transmission line circuit model for the interface of left-handed/right-handed materials in optics and micro...
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Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2010-03, Vol.16 (2), p.394-400 |
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creator | Dehbashi, Reza Fathi, Davood Mohajerzadeh, Shamsoddin Forouzandeh, Behjat |
description | A new circuit model for the graphene p-n junction (PNJ) is introduced, which is based on the model proposed by Cheianov , using equivalent quantum circuit elements. Our model is similar to the transmission line circuit model for the interface of left-handed/right-handed materials in optics and microwave circuits. To better observe the negative refraction behavior, the wave transfer from one side to another side of the junction has been simulated using HSPICE, showing a collective response just at the mirror point of the signal point. We discuss the possibility of the negative refraction of the electrons in other materials. Extending our modeling procedure from the Dirac-based graphene to the Schro¿dinger-based semiconductors, we model the negative refraction of the charge carriers in the PNJ of other materials. |
doi_str_mv | 10.1109/JSTQE.2009.2033818 |
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Our model is similar to the transmission line circuit model for the interface of left-handed/right-handed materials in optics and microwave circuits. To better observe the negative refraction behavior, the wave transfer from one side to another side of the junction has been simulated using HSPICE, showing a collective response just at the mirror point of the signal point. We discuss the possibility of the negative refraction of the electrons in other materials. Extending our modeling procedure from the Dirac-based graphene to the Schro¿dinger-based semiconductors, we model the negative refraction of the charge carriers in the PNJ of other materials.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2009.2033818</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charge carriers ; Circuit simulation ; Circuits ; Distributed parameter circuits ; Electrons ; Equivalence ; Fermions ; Graphene ; metamaterial ; microwave circuit model ; Microwave circuits ; Mirror point ; Mirrors ; nanotube ; negative refraction ; Optical materials ; Optical refraction ; P-n junctions ; Refraction ; Schrödinger ; Semiconductor materials ; Semiconductors</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2010-03, Vol.16 (2), p.394-400</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-6125b66ddfb3e76826a940e7c4f1bd2b57bf048c9cf61d0955bd0ba2e5d803c13</citedby><cites>FETCH-LOGICAL-c327t-6125b66ddfb3e76826a940e7c4f1bd2b57bf048c9cf61d0955bd0ba2e5d803c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5340672$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5340672$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Dehbashi, Reza</creatorcontrib><creatorcontrib>Fathi, Davood</creatorcontrib><creatorcontrib>Mohajerzadeh, Shamsoddin</creatorcontrib><creatorcontrib>Forouzandeh, Behjat</creatorcontrib><title>Equivalent Left-Handed/Right-Handed Metamaterial's Circuit Model for the Massless Dirac Fermions With Negative Refraction</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>A new circuit model for the graphene p-n junction (PNJ) is introduced, which is based on the model proposed by Cheianov , using equivalent quantum circuit elements. 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Extending our modeling procedure from the Dirac-based graphene to the Schro¿dinger-based semiconductors, we model the negative refraction of the charge carriers in the PNJ of other materials.</description><subject>Charge carriers</subject><subject>Circuit simulation</subject><subject>Circuits</subject><subject>Distributed parameter circuits</subject><subject>Electrons</subject><subject>Equivalence</subject><subject>Fermions</subject><subject>Graphene</subject><subject>metamaterial</subject><subject>microwave circuit model</subject><subject>Microwave circuits</subject><subject>Mirror point</subject><subject>Mirrors</subject><subject>nanotube</subject><subject>negative refraction</subject><subject>Optical materials</subject><subject>Optical refraction</subject><subject>P-n junctions</subject><subject>Refraction</subject><subject>Schrödinger</subject><subject>Semiconductor materials</subject><subject>Semiconductors</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkUtP3DAUhaOqlUpp_0C7sdQFq8C1HT-yrKYDFM0UlYfaXeTY14xRJgHbQeLfYzrQRTf3ofOdqyudqvpM4ZBSaI_OLq9-LQ8ZQFsK55rqN9UeFULXjWjY2zKDUjWT8Od99SGlWwDQjYa96nF5P4cHM-CYyQp9rk_N6NAdXYSbzetC1pjN1mSMwQwHiSxCtHPIZD05HIifIskbJGuT0oApke8hGkuOMW7DNCbyO-QN-Yk3JocHJBfoi5qL8rF6582Q8NNL36-uj5dXi9N6dX7yY_FtVVvOVK4lZaKX0jnfc1RSM2naBlDZxtPesV6o3kOjbWu9pA5aIXoHvWEonAZuKd-vDnZ37-J0P2PK3TYki8NgRpzm1CnBFRdSQCG__kfeTnMcy3MdBaaopFTLQrEdZeOUUkTf3cWwNfGxQN1zGN3fMLrnMLqXMIrpy84UEPGfQfAGpGL8CZO9hpo</recordid><startdate>20100301</startdate><enddate>20100301</enddate><creator>Dehbashi, Reza</creator><creator>Fathi, Davood</creator><creator>Mohajerzadeh, Shamsoddin</creator><creator>Forouzandeh, Behjat</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Our model is similar to the transmission line circuit model for the interface of left-handed/right-handed materials in optics and microwave circuits. To better observe the negative refraction behavior, the wave transfer from one side to another side of the junction has been simulated using HSPICE, showing a collective response just at the mirror point of the signal point. We discuss the possibility of the negative refraction of the electrons in other materials. Extending our modeling procedure from the Dirac-based graphene to the Schro¿dinger-based semiconductors, we model the negative refraction of the charge carriers in the PNJ of other materials.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2009.2033818</doi><tpages>7</tpages></addata></record> |
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subjects | Charge carriers Circuit simulation Circuits Distributed parameter circuits Electrons Equivalence Fermions Graphene metamaterial microwave circuit model Microwave circuits Mirror point Mirrors nanotube negative refraction Optical materials Optical refraction P-n junctions Refraction Schrödinger Semiconductor materials Semiconductors |
title | Equivalent Left-Handed/Right-Handed Metamaterial's Circuit Model for the Massless Dirac Fermions With Negative Refraction |
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