Estimation of Power Switching Current by Chip-Package-PCB Cosimulation

This paper presents a methodology to estimate power switching current on printed circuit boards (PCBs) through chip-package-PCB cosimulation. A macromodel for a timing controller chip running pseudo H-pattern data was generated from transistor-level simulations. The macromodel consists of a passive...

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Veröffentlicht in:IEEE transactions on electromagnetic compatibility 2010-05, Vol.52 (2), p.311-319
Hauptverfasser: Park, Hyun Ho, Song, Seung-Hyun, Han, Sang-Tae, Jang, Tae-Sun, Jung, Jin-Hwan, Park, Hark-Byeong
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container_end_page 319
container_issue 2
container_start_page 311
container_title IEEE transactions on electromagnetic compatibility
container_volume 52
creator Park, Hyun Ho
Song, Seung-Hyun
Han, Sang-Tae
Jang, Tae-Sun
Jung, Jin-Hwan
Park, Hark-Byeong
description This paper presents a methodology to estimate power switching current on printed circuit boards (PCBs) through chip-package-PCB cosimulation. A macromodel for a timing controller chip running pseudo H-pattern data was generated from transistor-level simulations. The macromodel consists of a passive impedance network and internal switching activity of the chip. Power delivery network models for package and PCB were produced as a RLCG netlist and S-parameter touch stone files, respectively, using commercial tools. It is found that comparison between the simulated and measured impedances of the chip and package shows excellent agreement up to 300 MHz. Also, the simulated and measured impedances of the PCB match well in terms of magnitude and resonance frequency up to 3 GHz. Moreover, the results of power switching current from cosimulation and measurement show good agreement within 5 dB difference at major harmonic frequencies of 20 MHz data and 80 MHz clock patterns up to 1 GHz.
doi_str_mv 10.1109/TEMC.2010.2043255
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A macromodel for a timing controller chip running pseudo H-pattern data was generated from transistor-level simulations. The macromodel consists of a passive impedance network and internal switching activity of the chip. Power delivery network models for package and PCB were produced as a RLCG netlist and S-parameter touch stone files, respectively, using commercial tools. It is found that comparison between the simulated and measured impedances of the chip and package shows excellent agreement up to 300 MHz. Also, the simulated and measured impedances of the PCB match well in terms of magnitude and resonance frequency up to 3 GHz. 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A macromodel for a timing controller chip running pseudo H-pattern data was generated from transistor-level simulations. The macromodel consists of a passive impedance network and internal switching activity of the chip. Power delivery network models for package and PCB were produced as a RLCG netlist and S-parameter touch stone files, respectively, using commercial tools. It is found that comparison between the simulated and measured impedances of the chip and package shows excellent agreement up to 300 MHz. Also, the simulated and measured impedances of the PCB match well in terms of magnitude and resonance frequency up to 3 GHz. Moreover, the results of power switching current from cosimulation and measurement show good agreement within 5 dB difference at major harmonic frequencies of 20 MHz data and 80 MHz clock patterns up to 1 GHz.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TEMC.2010.2043255</doi><tpages>9</tpages></addata></record>
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source IEEE Electronic Library (IEL)
subjects Automotive
Chips
Circuit boards
Computer simulation
cosimulation
Electromagnetic interference
electromagnetic interference (EMI)
IC emission model (ICEM)
Impedance
Impedance measurement
integrated circuit (IC)
Integrated circuit modeling
macromodel
Networks
Packages
power integrity (PI)
power noise transfer function
power switching current
printed circuit board (PCB)
Printed circuits
Semiconductor device measurement
Switches
Switching
Switching theory
timing controller (T-con) chip
title Estimation of Power Switching Current by Chip-Package-PCB Cosimulation
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