High-Resistivity Thin-Film Resistors Grown Using hboxCrB 2-Si-SiC Materials by Radio-Frequency Magnetron Sputtering

Thin-film resistors for the high resistivity and the low temperature coefficient of resistance (TCR) applications were prepared using the hboxCrB 2 -Si-SiC (it was abbreviated as CrSS) target in an argon and oxygen mixture ambient on the hboxSiO 2/hboxSi substrates by radio-frequency magnetron sputt...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-06, Vol.57 (6), p.1475-1480
Hauptverfasser:	Park, Kyoung-Woo, Hur, Sung-Gi, Ahn, Jun-Ku, Seong, Nak-Jin, Yoon, Soon-Gil
Format:	Artikel
Sprache:	eng
Schlagworte:	Argon Deposition Electrical properties Electrical resistivity Magnetron sputtering Phases Resistors Thin films
Online-Zugang:	Volltext
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