Complementary resistive switches for passive nanocrossbar memories

On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) a...

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Veröffentlicht in:	Nature materials 2010-05, Vol.9 (5), p.403-406
Hauptverfasser:	Waser, Rainer, Linn, Eike, Rosezin, Roland, Kügeler, Carsten
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1007 639/301/357 Arrays Biomaterials Chemistry and Materials Science Computer memory Condensed Matter Physics Density Energy consumption Energy efficiency Information technology Integrated circuits letter Logic Materials Science Nanostructure Nanotechnology Optical and Electronic Materials Power consumption Random access memory Reduction Switches
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