Cascaded Constructive Wave Amplification
A high-frequency amplifier technique is introduced based on traveling-wave amplification. As opposed to distributing amplifiers to support traveling waves, the proposed technique amplifies forward traveling waves while attenuating backward traveling waves through a cascade of stages that share a sin...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2010-03, Vol.58 (3), p.506-517 |
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description | A high-frequency amplifier technique is introduced based on traveling-wave amplification. As opposed to distributing amplifiers to support traveling waves, the proposed technique amplifies forward traveling waves while attenuating backward traveling waves through a cascade of stages that share a single transmission line. The behavior of the cascaded constructive wave amplifier is analyzed in terms of gain, bandwidth, stability, and noise figure. The amplifier is demonstrated in a 0.12-¿ m SiGe BiCMOS process with 12 cascaded amplification stages and achieves more than 26 dB of gain at 99 GHz with a 3-dB bandwidth of 13 GHz. The input and output return loss is better than 15 and 12 dB, respectively. The noise figure of the amplifier is 10.8 dB at 85 GHz. The output-referred P 1 dB is -0.1 dBm and the amplifier consumes 113 mW, including current biasing. |
doi_str_mv | 10.1109/TMTT.2010.2040329 |
format | Article |
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As opposed to distributing amplifiers to support traveling waves, the proposed technique amplifies forward traveling waves while attenuating backward traveling waves through a cascade of stages that share a single transmission line. The behavior of the cascaded constructive wave amplifier is analyzed in terms of gain, bandwidth, stability, and noise figure. The amplifier is demonstrated in a 0.12-¿ m SiGe BiCMOS process with 12 cascaded amplification stages and achieves more than 26 dB of gain at 99 GHz with a 3-dB bandwidth of 13 GHz. The input and output return loss is better than 15 and 12 dB, respectively. The noise figure of the amplifier is 10.8 dB at 85 GHz. The output-referred P 1 dB is -0.1 dBm and the amplifier consumes 113 mW, including current biasing.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2010.2040329</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplification ; Amplifiers ; Applied sciences ; Bandwidth ; Broadband amplifiers ; Circuit properties ; Design. Technologies. Operation analysis. Testing ; Distributed amplifier ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Gain ; Germanium silicon alloys ; Integrated circuits ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; millimeter wave ; Millimeter wave communication ; Millimeter wave integrated circuits ; Millimeter wave technology ; Narrowband ; Noise ; Noise figure ; Noise levels ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiGe integrated circuit ; Silicon germanides ; Silicon germanium ; Stability analysis ; Traveling waves ; traveling-wave amplifier</subject><ispartof>IEEE transactions on microwave theory and techniques, 2010-03, Vol.58 (3), p.506-517</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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As opposed to distributing amplifiers to support traveling waves, the proposed technique amplifies forward traveling waves while attenuating backward traveling waves through a cascade of stages that share a single transmission line. The behavior of the cascaded constructive wave amplifier is analyzed in terms of gain, bandwidth, stability, and noise figure. The amplifier is demonstrated in a 0.12-¿ m SiGe BiCMOS process with 12 cascaded amplification stages and achieves more than 26 dB of gain at 99 GHz with a 3-dB bandwidth of 13 GHz. The input and output return loss is better than 15 and 12 dB, respectively. The noise figure of the amplifier is 10.8 dB at 85 GHz. The output-referred P 1 dB is -0.1 dBm and the amplifier consumes 113 mW, including current biasing.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Broadband amplifiers</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Distributed amplifier</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Germanium silicon alloys</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>millimeter wave</subject><subject>Millimeter wave communication</subject><subject>Millimeter wave integrated circuits</subject><subject>Millimeter wave technology</subject><subject>Narrowband</subject><subject>Noise</subject><subject>Noise figure</subject><subject>Noise levels</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiGe integrated circuit</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>Stability analysis</subject><subject>Traveling waves</subject><subject>traveling-wave amplifier</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LAzEQhoMoWKs_QLwURPSydfK12T2WxS-oeFnxGKZpAinb3ZrsCv57s7T04GWGIc-8TB5CrinMKYXysX6v6zmDNDIQwFl5QiZUSpWVuYJTMgGgRVaKAs7JRYybNAoJxYQ8VBgNru16VnVt7MNgev9jZ1-YymK7a7zzBnvftZfkzGET7dWhT8nn81NdvWbLj5e3arHMDJeyz3InpDTGouIoVrimAhUgXWGJSipjXY7MOa7QAORgSspB5pAONVQoKRSfkvt97i5034ONvd76aGzTYGu7IWoluWK5KkQib_-Rm24IbTpOU2CKCk65TBTdUyZ0MQbr9C74LYbfBOlRnR7V6VGdPqhLO3eH5FFO4wK2xsfjImOKJZVj9s2e89ba47MU6WeM8T_Za3Te</recordid><startdate>20100301</startdate><enddate>20100301</enddate><creator>Buckwalter, J.F.</creator><creator>Joohwa Kim</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20100301</creationdate><title>Cascaded Constructive Wave Amplification</title><author>Buckwalter, J.F. ; Joohwa Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-6f455ccea73a4bad14a70a1ba9a757cef6a2ff37ac0060c9130560557c1475473</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Amplification</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Broadband amplifiers</topic><topic>Circuit properties</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Distributed amplifier</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Germanium silicon alloys</topic><topic>Integrated circuits</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>millimeter wave</topic><topic>Millimeter wave communication</topic><topic>Millimeter wave integrated circuits</topic><topic>Millimeter wave technology</topic><topic>Narrowband</topic><topic>Noise</topic><topic>Noise figure</topic><topic>Noise levels</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiGe integrated circuit</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>Stability analysis</topic><topic>Traveling waves</topic><topic>traveling-wave amplifier</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Buckwalter, J.F.</creatorcontrib><creatorcontrib>Joohwa Kim</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Buckwalter, J.F.</au><au>Joohwa Kim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cascaded Constructive Wave Amplification</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2010-03-01</date><risdate>2010</risdate><volume>58</volume><issue>3</issue><spage>506</spage><epage>517</epage><pages>506-517</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A high-frequency amplifier technique is introduced based on traveling-wave amplification. As opposed to distributing amplifiers to support traveling waves, the proposed technique amplifies forward traveling waves while attenuating backward traveling waves through a cascade of stages that share a single transmission line. The behavior of the cascaded constructive wave amplifier is analyzed in terms of gain, bandwidth, stability, and noise figure. The amplifier is demonstrated in a 0.12-¿ m SiGe BiCMOS process with 12 cascaded amplification stages and achieves more than 26 dB of gain at 99 GHz with a 3-dB bandwidth of 13 GHz. The input and output return loss is better than 15 and 12 dB, respectively. The noise figure of the amplifier is 10.8 dB at 85 GHz. The output-referred P 1 dB is -0.1 dBm and the amplifier consumes 113 mW, including current biasing.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2010.2040329</doi><tpages>12</tpages></addata></record> |
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subjects | Amplification Amplifiers Applied sciences Bandwidth Broadband amplifiers Circuit properties Design. Technologies. Operation analysis. Testing Distributed amplifier Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Germanium silicon alloys Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits millimeter wave Millimeter wave communication Millimeter wave integrated circuits Millimeter wave technology Narrowband Noise Noise figure Noise levels Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe integrated circuit Silicon germanides Silicon germanium Stability analysis Traveling waves traveling-wave amplifier |
title | Cascaded Constructive Wave Amplification |
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