Design and characterization of fully integrated PhotoFETS for ionizing particle sensors using a CMOS submicron technology

New applications for imaging are currently emerging in industrial and research systems: measurement of rare physical events, particle detection for high energy physics, electronic microscopy, etc. Imaging sensors are generally developed by using CCDs, CMOS technology or hybrid pixels. The originalit...

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Veröffentlicht in:Analog integrated circuits and signal processing 2008-12, Vol.57 (3), p.179-186
Hauptverfasser: Heini, Sébastien, Hu-Guo, Christine, Winter, Marc, Hu, Yann
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Sprache:eng
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