Design and characterization of fully integrated PhotoFETS for ionizing particle sensors using a CMOS submicron technology
New applications for imaging are currently emerging in industrial and research systems: measurement of rare physical events, particle detection for high energy physics, electronic microscopy, etc. Imaging sensors are generally developed by using CCDs, CMOS technology or hybrid pixels. The originalit...
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Veröffentlicht in: | Analog integrated circuits and signal processing 2008-12, Vol.57 (3), p.179-186 |
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