Ferromagnetism of Mn5Ge3 Precipitates in Mn-implanted Self-organized Ge/Si Quantum Dots
One layer of self-assembled Ge quantum dots with Si barrier were grown on high resistivity (100) p-type Si substrates by rapid thermal chemical vapor deposition followed by Mn ion implantation and post-annealing. A presence of ferromagnetic structure was confirmed in the dilute magnetic quantum dots...
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| Veröffentlicht in: | Journal of superconductivity and novel magnetism 2010-04, Vol.23 (3), p.319-323 |
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| creator | Yoon, I. T. |
| description | One layer of self-assembled Ge quantum dots with Si barrier were grown on high resistivity (100) p-type Si substrates by rapid thermal chemical vapor deposition followed by Mn ion implantation and post-annealing. A presence of ferromagnetic structure was confirmed in the dilute magnetic quantum dots (DMQD). The DMQD through 10 min annealing was found to be homogeneous, and to exhibit p-type conductivity, insulating property, and ferromagnetic ordering with a Curie temperature,
T
c
=170 K. On the other hand, the DMQD through 30 and 60 min annealing was found to be semi-insulating and ferromagnetic ordering with a Curie temperature over 300 K. The XRD data show that there is a phase separation of Mn rich phases Mn
5
Ge
3
from MnGe nanostructure. Therefore, it is likely that the ferromagnetic exchange coupling of sample with
T
c
=170 K is hole-mediated and the ferromagnetism in sample with
T
c
>300 K is due to Mn
5
Ge
3
phase. |
| doi_str_mv | 10.1007/s10948-009-0532-3 |
| format | Article |
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T
c
=170 K. On the other hand, the DMQD through 30 and 60 min annealing was found to be semi-insulating and ferromagnetic ordering with a Curie temperature over 300 K. The XRD data show that there is a phase separation of Mn rich phases Mn
5
Ge
3
from MnGe nanostructure. Therefore, it is likely that the ferromagnetic exchange coupling of sample with
T
c
=170 K is hole-mediated and the ferromagnetism in sample with
T
c
>300 K is due to Mn
5
Ge
3
phase.</description><identifier>ISSN: 1557-1939</identifier><identifier>EISSN: 1557-1947</identifier><identifier>DOI: 10.1007/s10948-009-0532-3</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Ferromagnetism ; Germanium ; Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) ; Magnetic Materials ; Magnetic properties and materials ; Magnetic properties of surface, thin films and multilayers ; Magnetism ; Manganese ; Original Paper ; Physics ; Physics and Astronomy ; Precipitates ; Precipitation ; Quantum dots ; Strongly Correlated Systems ; Superconductivity</subject><ispartof>Journal of superconductivity and novel magnetism, 2010-04, Vol.23 (3), p.319-323</ispartof><rights>Springer Science+Business Media, LLC 2009</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c280t-abcb26ed9c22aef72819fb3815c107775e4b13e989d264222687fc33bdba571a3</citedby><cites>FETCH-LOGICAL-c280t-abcb26ed9c22aef72819fb3815c107775e4b13e989d264222687fc33bdba571a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10948-009-0532-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10948-009-0532-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22651659$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yoon, I. T.</creatorcontrib><title>Ferromagnetism of Mn5Ge3 Precipitates in Mn-implanted Self-organized Ge/Si Quantum Dots</title><title>Journal of superconductivity and novel magnetism</title><addtitle>J Supercond Nov Magn</addtitle><description>One layer of self-assembled Ge quantum dots with Si barrier were grown on high resistivity (100) p-type Si substrates by rapid thermal chemical vapor deposition followed by Mn ion implantation and post-annealing. A presence of ferromagnetic structure was confirmed in the dilute magnetic quantum dots (DMQD). The DMQD through 10 min annealing was found to be homogeneous, and to exhibit p-type conductivity, insulating property, and ferromagnetic ordering with a Curie temperature,
T
c
=170 K. On the other hand, the DMQD through 30 and 60 min annealing was found to be semi-insulating and ferromagnetic ordering with a Curie temperature over 300 K. The XRD data show that there is a phase separation of Mn rich phases Mn
5
Ge
3
from MnGe nanostructure. Therefore, it is likely that the ferromagnetic exchange coupling of sample with
T
c
=170 K is hole-mediated and the ferromagnetism in sample with
T
c
>300 K is due to Mn
5
Ge
3
phase.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Ferromagnetism</subject><subject>Germanium</subject><subject>Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)</subject><subject>Magnetic Materials</subject><subject>Magnetic properties and materials</subject><subject>Magnetic properties of surface, thin films and multilayers</subject><subject>Magnetism</subject><subject>Manganese</subject><subject>Original Paper</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Precipitates</subject><subject>Precipitation</subject><subject>Quantum dots</subject><subject>Strongly Correlated Systems</subject><subject>Superconductivity</subject><issn>1557-1939</issn><issn>1557-1947</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9UMtOwzAQjBBIlMIHcMsFcTL1I47jIyq0IBUBKoij5TibylXiBDs5wNfjqlWPnPYxs6PZSZJrgu8IxmIWCJZZgTCWCHNGETtJJoRzgYjMxOmxZ_I8uQhhi3HGGc4nydcCvO9avXEw2NCmXZ2-OL4Elr55MLa3gx4gpNbFNbJt32g3QJWuoalR5zfa2d84LmG2tun7GMGxTR-6IVwmZ7VuAlwd6jT5XDx-zJ_Q6nX5PL9fIUMLPCBdmpLmUElDqYZa0ILIumQF4YZgIQSHrCQMZCErmmeU0rwQtWGsrErNBdFsmtzudXvffY8QBtXaYKCJPqEbgxKc5YWUhEcm2TON70LwUKve21b7H0Ww2mWo9hmqmKHaZahYvLk5qOtgdFN77YwNx8Noh5Ocy8ije16IkNuAV9tu9C4-_o_4HwVtgJM</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>Yoon, I. T.</creator><general>Springer US</general><general>Springer</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20100401</creationdate><title>Ferromagnetism of Mn5Ge3 Precipitates in Mn-implanted Self-organized Ge/Si Quantum Dots</title><author>Yoon, I. T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c280t-abcb26ed9c22aef72819fb3815c107775e4b13e989d264222687fc33bdba571a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Ferromagnetism</topic><topic>Germanium</topic><topic>Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)</topic><topic>Magnetic Materials</topic><topic>Magnetic properties and materials</topic><topic>Magnetic properties of surface, thin films and multilayers</topic><topic>Magnetism</topic><topic>Manganese</topic><topic>Original Paper</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Precipitates</topic><topic>Precipitation</topic><topic>Quantum dots</topic><topic>Strongly Correlated Systems</topic><topic>Superconductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoon, I. T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of superconductivity and novel magnetism</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoon, I. T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferromagnetism of Mn5Ge3 Precipitates in Mn-implanted Self-organized Ge/Si Quantum Dots</atitle><jtitle>Journal of superconductivity and novel magnetism</jtitle><stitle>J Supercond Nov Magn</stitle><date>2010-04-01</date><risdate>2010</risdate><volume>23</volume><issue>3</issue><spage>319</spage><epage>323</epage><pages>319-323</pages><issn>1557-1939</issn><eissn>1557-1947</eissn><abstract>One layer of self-assembled Ge quantum dots with Si barrier were grown on high resistivity (100) p-type Si substrates by rapid thermal chemical vapor deposition followed by Mn ion implantation and post-annealing. A presence of ferromagnetic structure was confirmed in the dilute magnetic quantum dots (DMQD). The DMQD through 10 min annealing was found to be homogeneous, and to exhibit p-type conductivity, insulating property, and ferromagnetic ordering with a Curie temperature,
T
c
=170 K. On the other hand, the DMQD through 30 and 60 min annealing was found to be semi-insulating and ferromagnetic ordering with a Curie temperature over 300 K. The XRD data show that there is a phase separation of Mn rich phases Mn
5
Ge
3
from MnGe nanostructure. Therefore, it is likely that the ferromagnetic exchange coupling of sample with
T
c
=170 K is hole-mediated and the ferromagnetism in sample with
T
c
>300 K is due to Mn
5
Ge
3
phase.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10948-009-0532-3</doi><tpages>5</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Condensed Matter Physics Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Ferromagnetism Germanium Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures) Magnetic Materials Magnetic properties and materials Magnetic properties of surface, thin films and multilayers Magnetism Manganese Original Paper Physics Physics and Astronomy Precipitates Precipitation Quantum dots Strongly Correlated Systems Superconductivity |
| title | Ferromagnetism of Mn5Ge3 Precipitates in Mn-implanted Self-organized Ge/Si Quantum Dots |
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